GaN and wide bandgap semiconductors (e.g. gallium oxide) are coming of age as the power consumption and demand for speed explode. Indeed, these compound and ultrawide bandgap semiconductors are preferred toward data centers, electric vehicles/mobilities and 6G/terahertz. Our lab conducts research on heterogeneous integration process, devices & systems to bring these applications into reality. 

• Materials/Structure

  • GaN, Gallium Oxide, etc. 

  • Ferroelectric dielectrics

  • Heterostructure

• Approach

  • Physics/Behavioral modeling (TCAD/Verilog-A)

  • Design and Fabrication

  • Heterogeneous integration

  • Characterization

• Application

  • Power devices

  • RF devices

  • Sensors 

  • micro-LED display

  • Neuromorphic