8. Reduced Leakage and improved endurance ... (In Revision)
7. Geometric and Scaling Effects on ..... (In Revision)
6. Vertical β-Ga2O3 SBD with improved BFOM.. (In Revision)
5. Hyeong Jun Joo, Gyuhyung Lee, Yoojin Lim, Brendan Hanrahan, and Geonwook Yoo
Enhanced reliability of ferroelectric GaN HEMTs with reduced depolarization-field effect
IEEE Electron Device Letters (10.1109/LED.2025.3599158 ) IF: 4.5
4. SiSung Yoon*, Seungyoon Oh*, Yoojin Lim, Ji-Hyeon Park, Dae-Woo Jeon, and Geonwook Yoo
Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates with Ferroelectric AlScN Gate Stack
IEEE Electron Device Letters (10.1109/LED.2025.3584764 ) IF: 4.5
3. SiSung Yoon, SeungYoon Oh, YoungKi Kim, Ji-Hyeon Park, MyungHun Shin, Dae-Woo Jeon, and GeonWook Yoo
Enhanced UVC responsivity and detectivity of heteroepitaxial α-Ga₂O₃ photodetector with an ultra-thin HfO2 interlayer
Micromachines (https://doi.org/10.3390/mi16070836) IF: 3.0
2. Gyuhyung Lee*, Hyeong Jun Joo*, Seung Yoon Oh, Geonwook Yoo
Suppressed negative DIBL of ferroelectric HEMT with gate-align patterned AlScN stack,
IEEE Electron Device Letters (10.1109/LED.2025.3568428 ) IF: 4.5
1. G. Lee+, Y. Oh+, J. Hwang, S. Hong, S. Song, K. Shin, J. Lee, S. Yoon, D. Kim, H. Kim-Lee, D. Kim, J. Kim, D. Shin, M. Yu, J. Lee, J. Park, H. Lee, S. Kim, B. Na, S. Yun, Y. Kim, J. Jeong, C. Park, K. Hwang*, Geonwook Yoo*
Scalable van der Waals integration of III-N devices over 2D materials for CMOS-compatible architectures,
Advanced Materials (https://doi.org/10.1002/adma.202420060) IF: 27.4
--------------------------------------------------< 2024 (9) > ---------------------------------------------------
9. K. Hwang*, J. Hwang, Y. Kim, S. Song, K. Kong, Y. Oh, D. Chung, M. Yu, D. Kim, J. Park, J. Moon, S. Kim, T. Kim, G. Lee, M. Yeom, J. Kim, D. Shin, D. Kim, S. Hong, H-J. Kim-Lee , J. Jeong, H. Lee*, and Geonwook Yoo*
1.6-inch transparent micro-display with pixel circuit integrated microLED chip array by misalignment-free transfer
Advanced Materials (https://doi.org/10.1002/adma.202416015) IF: 27.4
8. Seung Yoon Oh, Seokgi Kim, Gyuhyung Lee, JiHyeon Park, Daewoo Jeon, Sungkyu Kim, and Geonwook Yoo,
Wide-range threshold voltage tunable β-Ga2O3 FETs with a sputtered AlScN ferroelectric gate dielectric,
IEEE Electron Device Letters (doi:10.1109/LED.2024.3425439) Editor's Pick IF: 4.1
7. Seung Yoon Oh, Sisung Yoom, Yoojin Lim, Gyuhyung Lee, and Geonwook Yoo
Improved Lateral Figure-of-Merit of Heteroepitaxial α-Ga2O3 Power MOSFET using Ferroelectric AlScN Gate Stack
Applied Physics Letters (doi.org/10.1063/5.0232200) IF:3.5
6. Hyeong Jun Joo, Si Sung Yoon, Seung Yoon Oh, Yoojin Lim, Gyu Hyung Lee, Geonwook Yoo
Temperature-dependent ferroelectric behaviors of AlScN-based ferroelectric capacitors with a thin HfO2 interlayer for improved endurance and leakage current
Electronics (doi.org/10.3390/electronics13224515) IF:2.6
5. Seung Yoon Oh, Gyuhyung Lee, Jiyeon Ma, and Geonwook Yoo
Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga2O3 MOSFET
Semiconductor Science and Technology (doi:10.1088/1361-6641/ad22fe) IF: 2.1
4. Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo,
A 2.8 kV breakdown voltage α-Ga2O3 MOSFET with hybrid Schottky drain contact
Micromachines (https://doi.org/10.3390/mi15010133) IF: 3.4
3. Gyuhyung Lee, Jeongyong Yang, Min Jae Yeom, Sisung Yoon, and Geonwook Yoo
Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
Electronics (https://doi.org/10.3390/electronics13142783) IF: 2.6
2. Yongmin Baek, Byungjoon Bae, Jeongyong Yang, Wonjun Cho, Inbo Sim, Geonwook Yoo, Seokhyun Chung, Junseok Heo* and Kyusang Lee*
Network of Artificial Olfactory Receptors for Spatiotemporal Monitoring of Toxic Gas
Science Advances 10 (42), eadr2659 IF: 14.136
1. Jongho Ji†, Jeong Yong Yang†, Sangho Lee†, Seokgi Kim, Min Jae Yeom, Gyuhyung Lee, Sang-Hoon Bae, Sungkyu Kim, Jeehwan Kim*, Geonwook Yoo*, Hyun S. Kum*
Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap HEMTs
Communications Engineering (https://doi.org/10.1038/s44172-024-00161-z)
--------------------------------------------------< 2023 (8) > ---------------------------------------------------
8. J. Hwang, H. Kim-Lee, S.W. Hong, J.-Y. Park, D.K. Kim, D. Kim, S. Song, J. Jeong, Y. Kim, M.J. Yeom, M. Yu, J. Kim, Y. Park, D.-C. Shin, S. Kang, J Shin, Y Kim, E Yoon, H. Lee, G. Yoo*, J. Jeong*, K.Hwang*,
Wafer-scale alignment and integration of micro light-emitting diodes using engineered van der Waals forces
Nature Electronics (https://doi.org/10.1038/s41928-022-00912-w) 관련기사1, 관련기사2 IF: 33.255
Editorial, Shining a light on the future of microLEDs, Nature Electronics
7. M. Park†, J. Y. Yang†, M. J. Yeom, Y. Baek, B. Bae, G. Yoo*, and K. Lee*,
An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CIPS/GaN HEMT,
Science Advances (https://www.science.org/doi/10.1126/sciadv.adh9889) 관련기사 IF: 14.136
6. J. Y. Yang†, M. Park†, M. J. Yeom†, Y. Baek, S. C. Yoon, Y. J. Jeong, S. Y. Oh, K. Lee*, and G. Yoo* ,
Reconfigurable physical reservoir in GaN/α-In2Se3 HEMTs enabled by out-of-plane local polarization of ferroelectric 2D layer
ACS Nano (https://doi.org/10.1021/acsnano.3c00187) 관련기사 IF: 18.027
5. J. Y. Yang, S. Y. Oh, M. J. Yeom, S. Kim, G. Lee, K. Lee, S. Kim, and G. Yoo*,
Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric
IEEE Electron Device Letters (doi: 10.1109/LED.2023.3287913) Editor's Pick IF: 4.816
4. B. Bae, Y. Baek, J. Y. Yang, H. Lee, C. S.S. Sonnadara, S. Jung, M. Park, D. Lee, S. Kim, G. Giri, S. Shah*, G. Yoo*, W. A. Petri*, and K. Lee*,
Near-sensor Computing-Assisted Simultaneous Viral Antigen and Antibody Detection via Integrated Label-Free Biosensors with Microfluidics
InfoMat (https://doi.org/10.1002/inf2.12471) IF: 24.798
3. H. Y. Kang, M. J. Yeom, J. Y. Yang, Y. Choi, J. Lee, C. Park, G. Yoo*, R. Chung*.
Epitaxial k-Ga2O3/GaN heterostructure for high electron mobility transistors
Materials Today Physics, (https://doi.org/10.1016/j.mtphys.2023.101002) IF: 11.021
2. Y. Baek, B. Bae, J. Yang, D. Lee, H.S. Lee, M. Park, T. Kim, S. Kim, B.-I. Park, G. Yoo*, and K. Lee*
Quantized Neural Network via Synaptic Segregation Based on Ternary Charge-Trap Transistors
Advanced Electronic Materials, (https://doi.org/10.1002/aelm.202300303) IF: 7.633
1. Y. J. Jeong, C. H. Lee, M. J. Yeom, J. Y. Yang, G. Yoo*,
A hybrid Schottky-ohmic drain contact for thermally stressed beta-gallium oxide FETs
Physica Status Solidi (a), (https://doi.org/10.1002/pssa.202200596) IF: 2.170
--------------------------------------------------< 2022 (6) > -----------------------------------------------------
6. C. H. Lee, Y. Park, S. Youn, M. J. Yeom, H. S. Kum, J. Chang, J. Heo*, G. Yoo*,
Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors
Advanced Functional Materials, 2107992 (2022) 관련기사
5. C. H. Lee, Y. Park, S. Kim, Y. J. Jeong, Y. H. Ahn, Y. C. Kim, J. Heo*, and G. Yoo*,
Vertically stacked vdW double heterojunction photodiode with ultrawide bandgap gallium oxide electron reservoir
Advanced Optical Materials, 2200611 (2022)
4. J. Y. Yang, M. J. Yeom, J. Lee, K. Lee, C. Park*, J. Heo,* and G. Yoo*,
Reconfigurable RF HEMTs via ferroelectric-based GaN heterostructure
Advanced Electronic Materials, 2101406, (2022)
3. Y. J. Jeong, J.-H. Park, M. J. Yeom, I. Kang, J. Y. Yang, H.-Y. Kim, D.-W. Jeon*, G. Yoo*
Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
Applied Physics Express, 15 (7) (2022) 관련기사
2. J. Choi, B. Kim, S. Im*, G. Yoo,
Supervised Multivariate Kernel Density Estimation for Enhanced Plasma Etching Endpoint Detection
IEEE Access, 10, 25580 (2022)
1. Z Xing, A Akter, HS Kum, Y Baek, YH Ra, G Yoo, K Lee, Z Mi, J Heo
Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption
Scientific Reports 12 (1), 1-7 (2022)
--------------------------------------------------< 2021 (11) > -----------------------------------------------------
11. A. Hwang†, M. Park†, Y. Park†, Y. Shim, S. Youn, C. H. Lee, H. B. Jeong, H. Y. Jeong, J. Chang, K. Lee*, G. Yoo* and J. Heo*
Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure
Science Advances 7, eabj2521 (2021) 관련기사
10. J. Y. Yang, M. J. Yeom, Y. Park, J. Heo,* and G. Yoo*,
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
Advanced Electronic Materials, 2100306 (2021)
9. J. Ahn*; J. Ma*; D. Lee*; Q. Lin; Y. Park; O. Lee; S. Sim; K. Lee*; G. Yoo*; J. Heo*,
Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor
ACS Photonics 8(2), 557-566 (2021)
8. J.Y. Yang, J.Ma, C. H. Lee, and G. Yoo*,
Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors
IEEE Transactions on Electron Devices 68 (3), 1011-1015 (2021)
7. C. H. Lee, J.Y. Yang, J. Heo*, and G. Yoo*,
Graded Crystalline HfO2 Gate Dielectric Layer for High-k/Ge MOS Gate Stack
IEEE Journal of Electron Devices Society 9, 295-299 (2021)
6. J. Ahn, D. Kim, K.-H. Park, G. Yoo*, and J. Heo*,
Pt-decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
IEEE Transactions on Electron Devices 68 (3), 1255-1261 (2021)
5. Y. J. Jeong#, J. Y. Yang#, C. H. Lee, R. Park, G. Lee, R BK. Chung*, G. Yoo*, "
Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFET"
Applied Surface Science 558, 149936 (2021)
4. M. J. Yeom, J. Y. Yang, C. H. Lee, J. Heo, R. BK Chung*, G. Yoo*
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike Annealed HfO2 Gate Dielectric
Micromachine (GaN-based semiconductor devices) (2021)
3. Y. Park, J. Ma, G. Yoo*, and J. Heo*,
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors
Nanomaterials 11 (2), 494 (2021)
2. J.Y. Yang, C.H. Lee, Y. T. Oh, J.Ma, J. Heo*, and G. Yoo*,
A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current-voltage measurements
Jpn. J. of Appl. Phys. 60, 011003 (2021)
1. B. Kim, S. Im*, G. Yoo,
Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data
Electronics 10(1), 49 (2021) (Co-author)
--------------------------------------------------< 2020 (5) > -----------------------------------------------------
5. J.Y. Yang, J. Ma, and G. Yoo*
ALD grown polycrystalline HfO2 dielectric layer on (-201) β-Ga2O3 for MOS capacitors
Results in Physics, 103119 (2020)
4. S. Kim, H. Park, S. Choo, S. Baek, Y. Kwon, N. Liu, J. Y. Yang, C.-W. Yang, G. Yoo*, and S. Kim*
Active-matrix programmable monolithic gas sensor array based on two-step-grown MoS2 thin-film transistors
Communications Materials 1, 86, (2020)
3. T.H. Park, J.Y. Yang, J.Ma, and G. Yoo*
Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study
J. Korean Phys. Soc. 77 (4), 317-322 (2020)
2. J.Y. Park, Y. Kim, H. Jeon, N. Park, C.J. Han, B.K. Ju, M.S. Oh*, and G Yoo*
Design of Transparent Multicolor LED Signage with an Oxide-Metal-Oxide Interconnect Electrode
J. Korean Phys. Soc. 77 (1), 82-86 (2020)
1. J. Ma and G. Yoo*,
Electrical properties of top-gate beta-Ga2O3 nanomembrane metal semiconductor field-effect transistor (MESFET)
J. of Nanosci. Nanotech. 20 (1), 516-519 (2020)
--------------------------------------------------< 2019 (7)> -----------------------------------------------------
7. J. Ma, H. Cho, J. Heo, S. Kim, and G. Yoo*
Asymmetric double-gate beta-Ga2O3 nanomembrane field-effect transistor for energy-efficient power devices
Advanced Electronic Materials, 1800938 (2019)
6. J. Ma and G. Yoo*
Low subthreshold swing double-gate beta-Ga2O3 field-effect transistors with polycrystalline hafnium oxide dielectrics
IEEE Electron Device Letters. 40(8), 1171, (2019)
5. J. Ma, O. Lee, and G. Yoo*,
Effect of Al2O3 passivation on electrical properties of beta-Ga2O3 field-effect transistor
IEEE Journal of Electron Devices Society, 7, 512 (2019)
4. J. Oh, J. Ma, and G. Yoo*,
Simulation study of reduced self-heating in beta-Ga2O3 MOSFET on a nano-crystalline diamond substrate
Results in Physics 13, 102151 (2019)
3. J. Park, G. Yoo, and J. Heo*
CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness
Scientifc Report 9(1), 1411 (2019)
2. J. Ma and G. Yoo*
Surface depletion effect on negative bias stress instability of beta-Ga2O3 (100) nanomembrane FETs
Jpn. J. of Appl. Phys., 58(SB), SBBD01 (2019)
1. S. Jo, J. Heo, and G. Yoo*
Modeling and Simulation Study of Reduced Self -Heating in Bottom-Gate beta-Ga2O3 MISFET with h-BN Gate Insulator
J. Korean Phys. Soc., 74(12), 1171-1175 (2019)
--------------------------------------------------< 2018 (6)> ------------------------------------------------------
6. J. Ma, K. Choi, S. Kim, H. Lee and G. Yoo*
All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate
Applied Physics Letters, 113, 013102 (2018)
5. J. Ma, O. Lee, and G. Yoo*
Abnormal Bias-Temperature Stress and Thermal Instability of beta-Ga2O3Nanomembrane Field-Effect Transistor
IEEE Journal of Electron Devices Society, 6, 1124 (2018)
4. G. Yoo*, J. Ma, Y. Park, SH. Kim, YW. Joo, J. Heo, and M.S. Oh*
Threshold Voltage Tuning in Multilayer MoS2 Transistors via Fluorine-Based Plasma Treatment
Science of Advanced Materials,10 (10), 1427 (2018)
3. G. Yoo* and J. Ma
The effects of fluoropolymer gate-dielectric on air stability of MoS2 field-effect transistors
Science of Advanced Materials,10 (2), 181 (2018)
2. J. Ma and G. Yoo*
Thickness-Dependent Electrical Properties of MoS2 Field-Effect Transistors Fabricated on Sol–Gel Prepared AlOx Layer
J. of Nanosci. Nanotech., 18 (9), 5986 (2018)
1. J. Ma and G. Yoo*
Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS2 Transistors
J. of Nanosci. Nanotech., 18 (9), 5982 (2018)
--------------------------------------------------< 2017 (11) > -----------------------------------------------------
11. H. Park, G. Han, S. Lee, H. Lee, S. Jeong, M. Naqi, A. AlMutairi, Y. Kim, J. Lee, W.-J. Kim, S. Kim, Y. Yoon, and G. Yoo
Label-free and recalibrated multilayer MoS2 biosensor for point-of-care diagnostics
ACS Applied Materials & Interfaces, 9(50), 43490 (2017)
10. H. Kum, H.-K. Seong, W. Lim, D. Chun, Y.-I. Kim, Y. -S. Park, G. Yoo
Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications
Scientific Report, 7, 40945 (2017)
9. G. Yoo, S. Hong, J. Heo, and S. Kim
Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer
Applied Physics Letters, 110, 053112 (2017)
8. S. Lee, Y. Park, G. Yoo, and J. Heo
Wavelength-selective enhancement of photo-responsivity in metal-gated multi-layer MoS2 phototransistors
Applied Physics Letters, 111, 223106 (2017)
7. J. Park, Y. Park, G. Yoo, and J. Heo
Bias-dependent photoresponsivity of multilayer MoS2 phototransistors
Nanoscale Research Letters, 12,:599 (2017)
6. D. Vikraman, K. Akbar, S. Hussain, G. Yoo, J.-Y. Jang, S.-H. Chun, J. Jung, H. J. Park
Direct Synthesis of Thickness-Tunable MoS2 Quantum Dot Thin Layers: Optical, Structural and Electrical Properties and Their Application to Hydrogen Evolution
Nano Energy, 35, 101 (2017)
5. G. Yoo, H. Park, M. Kim, W. G. Song, S. Jeong, M. H. Kim, H. Lee, S. W. Lee, Y. K. Hong, M. G. Lee, S. Lee, S. Kim
Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics
Nano Research, 10, 1 (2017)
4. G. Yoo, S. L. Choi, S. J. Park, K.-T. Lee, S. Lee, M. S. Oh, J. Heo, and H. J. Park
Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters
Scientific Report, 7, 40893 (2017)
3. A. Akter, G. Yoo, S. Kim, H.W. Baac, and J. Heo
AlGaN cladding effect on intraband absorption of InGaN disk embedded in GaN nanowire
J. of Nanosci. Nanotech., 17, 3279 (2017)
2. G. Yoo, S. L. Choi, B. Yoo, and M.S. Oh
Solution-processed high-k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS2 thin-film transistors
Physica Status Solidi (a), 214, 1600619 (2017)
1. Y. Park, S. Lee, H.J. Park, G. Yoo, and J. Heo
Hybrid metal-halide perovskite-MoS2 phototransistor
J. of Nanosci. Nanotech., 16, 11722 (2016)
--------------------------------------------------< Before SSU > --------------------------------------------------
14. W. Lim, H. Kum, Y.-J. Choi, S.-H. Sim, J.-H. Yeon, J.-S. Kim, H.-K. Seong, N.-G. Cha, Y.-I. Kim, Y.-S. Park, G. Yoo, S. J. Pearton “SiO2 nano-hole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting diodes” J. of Vac. Sci. Tech. B., 34, 042204 (2016)
13. G. Yoo, Y. Park, P. Sang, H.W. Baac, and J. Heo “High-frequency optoacoustic transmitter based on nanostructured germanium via metal-assisted chemical etching” Optical Material Express, 6, 2567 (2016)
12. G. Yoo, S. L. Choi, S. Lee, B. Yoo, S. Kim, and M.S. Oh “Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer” Applied Physics Letters, 108, 263106 (2016)
11. Y. Hong, G. Yoo et. al. “High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics” AIP Advances, 6, 055026 (2016)
10. Y. Park, H.W. Baac, J. Heo, G. Yoo "Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors" Applied Physics Letters, 108, 083102 (2016)
9. G. Yoo, H. Yoon, J. Heo, U. Thakur, H.J. Park, H.W. Baac, and J. Heo “All-Optical Ultrasound Transducer Using CNT-PDMS and Etalon Thin-Film Structure”, IEEE Photonics Journal, 7, 6803708 (2015)
8. J. Kwon, S. Hong, Y. Hong, S. Lee, G. Yoo, Y. Yoon, and S. Kim "Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap” Applied Physics Letters, 107, 101063 (2015)
7. G. Yoo, S. Lee, B. Yoo, S. Kim, and M.S. Oh "Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes” IEEE Electron Device Letters. 36, 1215 (2015)
6. Y. Tchoe, J. Jo, M. Kim, J. Heo, G. Yoo, C. Sone, and G.-C. Yi “Variable-color light emitting diodes using GaN microdonut arrays,” Advanced Materials, 26, 3019 (2014)
5. G. Yoo, D. Radtke, G.Baek, U. Zeitner, and J. Kanicki, “Electrical instability of a-Si:H TFTs fabricated by maskless laser-write lithography on a spherical surface,” IEEE Transactions on Electron Device, 58, 160 (2011)
4. G. Yoo, T.-Z. Fung, D. Radtke, M. Stumpf, U. Zeitner, and J. Kanicki, “Hemispherical Thin-Film Transistor Passive Pixel Sensors,” Sensor and Actuator A: Physical, 158, 280-283 (2010)
3. G. Yoo, H. Lee, and J. Kanicki, “Electrical stability of hexagonal a-Si:H TFTs,” IEEE Electron Device Letters, 31, 53 (2010)
2. G. Yoo, H. Lee, D. Radtke, M. Stumpf, U. Zeitner, and J. Kanicki, “A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface,” Microelectronic Engineering, 87, 83 (2010)
1. H. Lee, G. Yoo, J.-S Yoo, and J. Kanicki, “Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays,” Journal of Applied Physics, 105, 124522 (2009)