저희 연구실은 III-V, Ultrawide bandgap Semiconductor 소자, 이종집적 공정 및 시스템에 대한 연구를 진행하고 있습니다. 함께 할 대학원생을 상시 모집하고 있으니, 관심있는 학생은 gwyoo@ssu.ac.kr 로 연락 바랍니다.

Highlighted News

• [Mar 2025] "Scalable van der Waals integration of III-N devices over 2D materials for CMOS-compatible architectures" is accepted for publication in Advanced Materials  

• [Dec 2024] "1.6-inch transparent micro-display with pixel circuit integrated microLED chip array by misalignment-free transfer" is accepted for publication in Advanced Materials  

• [Jul 2024] "Wide-range threshold voltage tunable β-Ga2O3 FETs with a sputtered AlScN ferroelectric gate dielectric" is accepted for publication in IEEE Electron Device Letters (Editor's Pick)  

• [Aug 2023] "An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CIPS/GaN HEMT" is accepted for publication in Science Advances 관련기사

• [June 2023] "Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric" is accepted for publication in IEEE Electron Device Letters (Editor's Pick)

• [Mar 2023] "Reconfigurable physical reservoir in GaN/α-In2Se3 HEMTs enabled by out-of-plane local polarization of ferroelectric 2D layer" is accepted for publication in ACS Nano 관련기사

• [Dec 2022] "Wafer-scale alignment and integration of micro light-emitting diodes using engineered van der Waals forces" is accepted for publication in Nature Electronics 관련기사1, 관련기사2, Editorial, Shining a light on the future of microLEDs. 

• [Apr 2022] "Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy" is accepted for publication in Applied Physics Express 관련기사

• [Jan 2022] "Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors" is accepted for publication in Advanced Functional Materials 관련기사

• [Dec 2021] "Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure" is accepted for publication in Science Advances 관련기사