Heterogeneous Integrated Device & System Lab
저희 연구실은 III-V, Ultrawide bandgap Semiconductor 소자, 이종집적 공정 및 시스템에 대한 연구를 진행하고 있습니다. 함께 할 대학원생을 상시 모집하고 있으니, 관심있는 학생은 gwyoo@ssu.ac.kr 로 연락 바랍니다.
Highlighted News
[Jul 2024] Our paper "Wide-range Threshold Voltage Tunable β-Ga2O3 FETs with a Sputtered AlScN Ferroelectric Gate Dielectric" is accepted for publication in IEEE Electron Device Letters
[Aug 2023] Our paper "An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CIPS/GaN HEMT" is accepted for publication in Science Advances
[June 2023] Our paper "Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric" is accepted for publication in IEEE Electron Device Letters. (Editor's Pick)
[Mar 2023] Our paper "Reconfigurable physical reservoir in GaN/α-In2Se3 HEMTs enabled by out-of-plane local polarization of ferroelectric 2D layer" is accepted for publication in ACS Nano.
[Dec 2022] Our paper "Wafer-scale alignment and integration of micro light-emitting diodes using engineered van der Waals forces" is accepted for publication in Nature Electronics.
[Jan 2022] Our paper "Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors" is accepted for publication in Advanced Functional Materials.
[Dec 2021] Our paper "Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure" is accepted for publication in Science Advances