Publications

Books:

A. Sengupta and C.K. Sarkar (Eds.), “Introduction to Nano: Basics to Nanoscience and Nanotechnology”, Springer Verlag (Berlin/Heidelberg), 2015. (ISBN: 978-3-662-47313-9)

Patents:

1 Indian Patent Published: 1T’-ReSTe: a novel two-dimensional Janus material, Application No: 202241072088, Journal Number- 52/2022, Journal Date: 30/12/2022.

International Journal Publications

1.  A. Sengupta, 'Detection of SARS CoV biomarker Ethyl Butyrate on reduced 2-dimensional Zinc Oxide', Materials NanoScience, vol. 12, pp. 1187 (2025).

2. P. Acharya, A. Rezaei, A. Sengupta, T. Dutta, N. Kumar, P. Maciazek, A. Asenov, V. Georgiev, 'Analysis of random discrete dopants embedded nanowire resonant tunnelling diodes for generation of physically unclonable functions', IEEE Transactions on Nanotechnology, Vol. 23, pp. 815-821 (2024). (Impact Factor: 2.100)

3. P.K. Mishra, A. Dash, R. Dobhal, E.G. Rini, A. Sengupta, S. Sen, 'Defects altered n/p-type Fe/Ga modified ZnO for photo-sensing applications', Materials Today Communications, vol. 36, pp. 106371, (2023). (Impact Factor: 3.662). 

4. A. Rezaei, P. Maciazek, A. Sengupta, T. Dutta, C. Medina-Bailon, A. Asenov, V. P. Georgiev, 'Statistical Device Simulations of III-V Nanowire Resonant Tunneling Diodes as Physical Unclonable Functions Source', Solid State Electronics, vol 194, pp. 108339 (2022). (Impact Factor: 1.901). 

5. A. Sengupta, 'First principles study of Li adsorption properties of a Borophene based hybrid 2D material B5Se', Applied Surface Science Advances, vol. 8, pp. 100218 (2022). (Impact Factor: 7.500). 

6. A. Sengupta, 'First principles design of 2 dimensional Nickel dichalcogenide Janus materials NiXY (X,Y=S,Se,Te)' ,Computational Materials Science, vol. 206, pp. 111278 (2022). (Impact Factor: 3.300). ISSN: 0927-0256

7. A. Sengupta, 'Electronic and optical properties of 2D metal/ semi-metal - ReS2 van der Waals heterostructures from first principles calculations', Int. J. of Nanoparticles vol. 14, No.2-4, pp. 213-225  (Special Issue: DevIC2021 Frontiers of Nano dimensional Devices Materials Physics Modelling and Simulation ) (2022).

8. P.K. Mishra, P. Viji, R. Dobhal, A. Sengupta, E.G. Rini, S. Sen, 'Defects assisted photosensing and dye degradation of Ni/Ga co-doped ZnO: A theory added experimental investigation' , Journal of Alloys and Compounds, vol. 893, pp. 162229 (2022). (Impact Factor: 5.316).

9. A. Sengupta, ‘Electronic and optical properties of SnX2(X=S, Se)-InSe van der Waals heterostructures from first- principle calculations’, Physica Scripta, vol. 94, no. 12, pp. 125806 (1-7) (2019). (Impact Factor : 2.151).

10. A. Sengupta, A. Dominguez, and T. Frauenheim, ‘Photo-absorption properties of van der Waals heterostructure of monolayer InSe with silicene, germanene and antimonene’, Applied Surface Science, vol. 475, pp. 774-780 (2019).  (Impact Factor : 6.182).

11. A. Sengupta , 'Lithium and Sodium adsorption properties of two-dimensional aluminum nitride',  Applied Surface Science, vol. 451, pp. 141-147 (2018). (Impact Factor : 6.182).

12. B. Sharma, A. Sengupta and C.K. Sarkar, 'Computational study of CNT based Nanoscale Reversible Mass Transport Archival Memory with Fe, Co and Ni nano-Shuttles', Computational Materials Science, vol. 146, pp. 112-118 (2018). (Impact Factor : 2.644).

13. L. Banerjee, A. Sengupta, H. Rahaman, ‘Carrier transport and thermoelectric properties of differently shaped Germanene (Ge) and Silicene (Si) nanoribbon interconnects,’  IEEE Transactions on Electron Devices, vol. 66, Iss. 1, pp. 664-669 (2018)  (Impact Factor : 2.704).

14. B. Sharma, A. Mukhopadhyay, L. Banerjee, A. Sengupta, H. Rahaman, C. K. Sarkar, 'Ab initio study of mono-layer 2-D insulators (X-(OH)2 and h-BN) and their use in MTJ Memory device',  Microsystem Technologies, vol. 25, Iss. 5, pp. 1909-1917 (2019).  (Impact Factor : 1.513).

15. A. Sengupta and T. Frauenheim, 'Lithium and Sodium adsorption properties of monolayer antimonene', Materials Today Energy, vol. 5, pp. 347-354  (2017). (Impact Factor: 5.604)

16. A. Sengupta, 'Atomistic study of electrostatics and carrier transport properties of CNT@MS2 (M= Mo,W) and CNT@BN core-shell nanotubes', Journal of Materials Science, vol. 52, No. 13, pp. 8119-8131 (2017). (Impact Factor : 2.302).

17. A. Sengupta, 'On the junction physics of Schottky contact of (10, 10) MX2 (MoS2, WS2) nanotube and (10, 10) carbon nanotube (CNT): an atomistic study', Applied Physics A, vol. 123, pp. 227 (1-9) (2017) (Impact Factor : 1.517).

18. A. Sengupta, M. Audiffred, T. Heine, T.A. Niehaus, ‘Stacking dependence of carrier transport properties in multilayered black phosphorous’, Journal of Physics: Condensed Matter, vol. 28, pp. 075001 (1-10)  (2016). (Impact Factor : 2.346)

19. L. Banerjee, A. Mukhopadhyay, A. Sengupta, H. Rahaman, 'Performance analysis of uniaxially strained monolayer black phosphorus- and blue phosphorus-based n-MOSFET and p-MOSFET', Journal of Computational Electronics, vol. 15, Iss. 3, pp. 919-930 (2016).  (Impact Factor : 1.520)

20. B. Sharma, A. Mukhopadhyay, A. Sengupta, H. Rahaman, C. K. Sarkar, ‘Analysis of tunneling currents in Multilayer Black Phosphorous and MoS2 non-volatile flash memory cells’,  Journal of Computational Electronics, Vol. 15, Issue 1, pp. 129-137 (2016).  (Impact Factor : 1.520)

21. A. Mukhopadhyay, L. Banerjee, A. Sengupta, H. Rahaman ‘Effect of Stacking Order on Device Performance of Bilayer Black Phosphorene-FET’ Journal of Applied Physics, vol. 118, pp. 224501 (1-5) (2015). (Impact Factor : 2.276)

22. A. Sengupta, D. Saha, T.A. Niehaus and S. Mahapatra, ‘Effect of line defects on the electrical transport properties of monolayer MoS2 sheet’, IEEE Transactions on Nanotechnology vol. 14, No. 1,  pp. 51-56  (2015). (Impact Factor : 1.825)

23.  A. Sengupta, A. Chanana, and S.. Mahapatra, ‘Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET’, AIP Advances, vol. 5, No. 2,  pp. 027101 (1-9) (2015). (Impact Factor : 1.591)

24. A. Sengupta and C. K. Sarkar, ‘Study on Nanoparticles Embedded Multilayer Gate Dielectric MOS Non Volatile Memory Devices’, International Journal of Nanotechnology (IEEE INEC Special Issue ), Vol.11, No.12, pp.1073 – 1080 (2014). (Impact Factor : 1.335)

25. D. Saha, A. Sengupta, S. Bhattacharyya and S. Mahapatra, 'Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR' Journal of Computational Electronics Volume 13, Issue 4, pp 862-871 (2014). (Impact Factor : 1.520)

26. A. Chanana, A. Sengupta, and S. Mahapatra, “Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects” Journal of Applied Physics Vol. 115, Issue 3, pp. 034501 (2014) (Impact Factor : 2.276)

27. A. Sengupta and S. Mahapatra, 'Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon MOSFET', Journal of Applied Physics Vol. 114, pp. 194513 (2013). (Impact Factor : 2.276)

28. A. Sengupta Ram Krishna Ghosh and S. Mahapatra, ‘Performance Analysis of Strained Monolayer MoS2 MOSFET', IEEE Transactions on Electron Devices Vol. 60, pp. 2782 (2013). (Impact Factor : 2.472)

29. A. Sengupta and S. Mahapatra, 'Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors', Journal of Applied Physics Vol. 113, pp. 194502 (2013). (Impact Factor : 2.276)

30. A. Sengupta, and C. K. Sarkar, ‘Surface Potential Based Analytical Modeling of Double Gate MOSFET Non-Volatile Memory with Si and Au Nano-dots Embedded Gate Dielectric’, Journal of Computational & Theoretical Nanoscience, Vol. 10, No. 4, pp. 906-913 (2013) (Impact Factor : 1.343)

31. A. Sengupta, C. K. Sarkar, and Felix G. Requejo, ‘Semi-Analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide Compound Semiconductor MOSFET memory Devices’, Journal of Computational Electronics, Vol. 11, Issue 4, pp. 303-314 (2012) (Impact Factor : 1.520)

32. S. Dash, G. Chakraborty, A. Sengupta, C. K. Sarkar, ‘Optimization of tunneling currents through CNT & Si nanocrystals embedded gate oxide MOS Structure using Genetic Algorithm approach for memory device application’, Journal of Computational and Theoretical Nanoscience , Vol. 9, No. 3, pp. 434-440 (2012) (Impact Factor : 1.343)

33. Amretashis Sengupta, Pashupati Shah, Chandan Kumar Sarkar, Felix G. Requejo, ‘Computational study on semiconducting and metallic nanocrystal embedded gate oxide MOS non-volatile memory devices’, Advanced Science Letters, Vol. 10, No. 1, pp. 47-54 (2012) (Impact Factor : 1.253)

34. A. Sengupta, and C. K. Sarkar, ‘Analytical Modeling of Si and Au Nanocrystal Embedded Multilayer Gate Dielectric Long Channel Gate All Around (GAA) MOSFET Non Volatile Memory Devices’ Nanoscience & Nanotechnology Letters, Vol. 4, No. 7, pp. 667-675 (2012) (Impact Factor : 1.431)

35. A. Sengupta, C. K. Sarkar, F. G. Requejo, ‘Comparative study of silicon nanowire, CNT and fullerene embedded multilayer high-k gate dielectric MOS memory devices ‘, Journal of Physics D: Applied Physics Vol. 44, No. 36, pp. 405101 (2011). (Impact Factor : 2.721)

36. G. Chakraborty, A. Sengupta, F.G.Requejo, C.K. Sarkar,‘Study of the relative performance of Silicon and Germanium nanoparticles embedded gate oxide in metal-oxide-semiconductor memory devices’  Journal of Applied Physics. Vol. 109, pp. 064504 (2011). (Impact Factor : 2.276)

37. A. Sengupta, S. Maji and H. Saha, ‘CBD Grown aligned ZnO nanorods based methane sensor and the effect of Pd sensitization’, Advanced Science Letters, Vol. 3, No. 4, pp. 385-392 (2010). (Impact Factor : 1.253)

38. S. Maji, P. Bhattacharyya, A. Sengupta, and H. Saha, ‘Growth and Characterization of Nano-cups, Flowers and Nanorods of ZnO by Chemical Bath Deposition’, Advanced Science Letters, Vol. 3, No. 2, pp. 154-160 (2010). (Impact Factor : 1.253)

39. G. P. Mishra, A. Sengupta, S. Maji, S. K. Sarkar and P. Bhattacharyya, ‘The Effect of Catalytic Metal Contact on Methane Sensing Performance of Nanoporous ZnO -Si Heterojunction’, International Journal on Smart Sensing and Intelligent Systems, Vol. 3, No. 2, pp. 273-291 (2010).

40. P. Bhattacaharyya, S. Maji, S. Biswas, A. Sengupta, T. Maji, H. Saha, ‘Palladium Surface Modification of Nanocrystalline Sol-Gel derived Zinc Oxide Thin Films and its Effect on Methane Sensing’, Sensors & Transducers Journal, Vol. 110, Issue 11, pp.38-46, (2009)

International Conference Publications

1. A. Sengupta, 'A first principles study on 2 dimensional Zinc Carbide ', IOP Interdisciplinary Surface Science Conference (ISSC-25) , 31 March - 2 April, 2025.

2. A. Sengupta, "Lithium adsorption properties of two-dimensional chromium nitride", The 4th International Online Conference on Crystals, 18–20 September 2024.

3. A. Sengupta, "Leveraging 2D Materials for Sustainable Energy Storage Advancements", 11th International Conference on Energy, Sustainability and Climate Crisis (ESCC 2024), August 26 - 30, 2024, Corfu, Greece.

4. A. Sengupta, "Layered CrO2 as an electrode material candidate for supercapacitor applications", AIP Horizons: Energy Storage and Conversion, August 4-6, 2021, USA.

5. A. Sengupta, “Li adsorption properties of monolayer Cu sheets”, ACS Spring meeting 2021, April 5-30, 2021, USA.

6. A. Sengupta, “2 dimensional GaS as a potential electrode material for supercapacitor applications”, 23rd IOP Interdisciplinary Surface Science Conference (ISSC-23), 19-21 April 2021, London, UK.

7. A. Sengupta, “Enhancement of Evanescent Bloch Waves in monolayer 1T’-ReS2 under Compressive Strain” Chemistry of 2-dimensional materials: beyond graphene Faraday Discussion,  23-25 November, 2020,  Royal Society of Chemistry, London, UK.

8. A. Sengupta, “Thermoelectric Properties of Patterned Hybrid Zigzag Siligene Nanoribbons” Chemistry of 2-dimensional materials: beyond graphene Faraday Discussion,  23-25 November, 2020,  Royal Society of Chemistry, London, UK.

9. A. Sengupta, “Electronic and Optical properties of 1T’-ReS2 Graphene van der Waals heterostuctures”,  2020 IEEE International Conference Nanomaterials: Applications & Properties (IEEE NAP-2020),  9-13 November, 2020, Sumy, Ukraine.

10. A. Sengupta, “Magnesium Adsorption Properties of Two Dimensional Silicon Germanium Hybrid for Electrode Application in Ion Batteries” , 2nd Battery and Energy Storage Conference,  21-23 October, 2020,  American Institute of Chemical Engineers, New York, USA.

11.  V. P. Georgiev, A. Sengupta, P. Maciazek, O. Badami, C. Medina-Bailon, T. Dutta, F. Adamu-Lema, A. Asenov, “Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications”, 25th IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020), September 23 - October 6, 2020, Japan.

12. A. Sengupta, “On the adatom doping of 2-Dimensional siligene (SiGe) with alkali metals”, DPG Spring Meeting-2018, 11-16 March, 2018, Berlin, Germany.

13. A. Sengupta, “Performance limits of monolayer 1TËS-ReS2 nanoscale MOSFETs”, IEEE Nanotechnology Materials and Devices Conference 2017 (IEEE NMDC 2017), 2-4 October 2017, Singapore.

14. L. Banerjee, A. Mukhopadhyay, B. Sharma, A. Sengupta, H. Rahaman , “Performance analysis of 2D Graphene FET embedded with hexagonal Boron Nitride clusters" ,  IEEE Devices for Integrated Circuit (DevIC 2017), Kolkata, 23-24 March 2017.

15. B. Sharma , A. Mukhopadhyay, L. Banerjee, A. Sengupta, H. Rahaman and C. K. Sarkar, “Effect of Ca(OH)2, hBN and Mg(OH)2 based insulators as composite oxides in Magnetic Tunnel Junction Memory Device Properties”, IEEE Devices for Integrated Circuit (DevIC 2017), Kolkata, 23-24 March 2017.

16. A. Mukhopadhyay, L. Banerjee, B. Sharma, A. Sengupta, H. Rahaman and C. K. Sarkar, "Computational Study of Silicene-CNT Double Junctions", IEEE Devices for Integrated Circuit (DevIC 2017), Kolkata, 23-24 March 2017.

17. A. Sengupta, "Atomistic Simulation of Transport Properties of Non-Graphitic Armchair Nanotubes and Effect of Stone-Wales Defects", 21st International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2016) held in Nurnberg, Germany, Proc. SISPAD, pp. 97-100 (2016).

18. A. Sengupta, "Influence of size and shape of nano-islands of hexagonal boron nitride (hBN) on optical and transport properties of hBN embedded Graphene nanoribbons", CeCAM Workshop on Computational insight into photo-induced processes at interfaces, October 10 - October 14, 2016, Bremen, Germany.(2016)

19. A. Sengupta and T. Frauenheim, "Tuning of optical properties by layer engineering tin chalcogenide- graphene van der Waals heterostructure", CeCAM Workshop on Computational insight into photo-induced processes at interfaces, October 10 - October 14, 2016, Bremen, Germany. (2016)

20. A. Chanana, A. Sengupta, S. Mahapatra, 'Analysis of vacancy defects in hybrid graphene-boron nitride armchair nanoribbon based n-MOSFET at ballistic limit', 2015 International Workshop on Computational Electronics (IWCE), Sep 2, 2015,  Purdue University, West Lafayette, IN, USA.

21. A. Mukhopadhyay, L. Banerjee, Amretashis Sengupta, H. Rahaman, 'Strain Modulated Variations in Monolayer Phosphorene n-MOSFET’, 2015 IEEE Conference on Electron Devices and Solid State Circuits (IEEE EDSSC - 2015), June 1-4, 2015, Singapore.

22. A. Sengupta, "Study of next generation 2D and 1D  channel material MOSFETs" ,CEFIPRA Indo-French Workshop on Emerging Trends in Electron Device Modeling, 30 March -1 April, 2015, Indian Institute of Science, Bangalore.

23. A. Sengupta, "Study of next generation 2-D channel material MOSFETs with empirical tight binding – NEGF formalism", CeCAM Workshop on High performance models for charge transport in large scale materials systems,  5-10 October, 2014, Bremen, Germany .

24. B. Sharma, G. Chakraborty, A. Sengupta, H. Rahaman, and C.K. Sarkar, ‘Study of the Tunneling Characteristics of Metal and Semiconductor Nanoparticles Embedded Gate Dielectric in MOS structures’, International Conference on Advanced Materials and Energy Technology (ICAMET) 2014 December 17-19, 2014 , IIEST Shibpur, Howrah, West Bengal, India.

25. Amretashis Sengupta, and Chandan Kumar Sarkar, ‘Comparative Study on Nanocrystal Embedded Gate Dielectric and Oxide Nitride Oxide Stack Dielectric GAA MOSFET Non-volatile Memory Devices’, IEEE-IAPR-OSA International Conference on Informatics Electronics & Vision (ICIEV- 2012) Dhaka, Bangladesh, 18th ~19th May, 2012.

26. Amretashis Sengupta, Kalyan Koley, and Chandan Kumar Sarkar, ‘Subthreshold Chrage Leakage in Nanoparticle Embedded DGMOSFET Memory Devices an Analytical Study’,IEEE International Conference on Devices, Circuits and Systems (IEEE ICDCS’ 12) Karunya University, Coimbatore, 15-16th March 2012.

27. A. Sengupta, P. Shah, C.K. Sarkar, ‘Use of Nanomaterials for Performance Enhancement of MOS Non Volatile Memory Elements’, International Conference on Nanoscience, Engineering & Advanced Computing (ICNEAC-2011), Swarnandhra College of Engg. & Tech., Narsapur, AP, July 8-10, 2011.

28. Amretashis Sengupta, Chandan K. Sarkar, ‘Study on Nanoparticles Embedded Multilayer Gate Dielectric MOS Non Volatile Memory Devices’, The 4th IEEE International Nano Electronics Conference (4th IEEE INEC-2011), 21-24 June 2011, Chang Gung University, Tao Yuan, Taiwan.

29. A. Sengupta, G.P. Mishra, P. Bhattacharyya, H. Saha, S.K. Sarkar, ‘Chemical Bath Deposited ZnO nanorod array p-Si heterojunction methane sensor’ International Conference on Fundamental & Application of Nano science & Technology (ICFANT-2010), Jadavpur University, Kolkata, Dec 9-11, 2010.

30. G. Chakraborty, A. Sengupta, F.G.Requejo, C.K. Sarkar, ‘On the comparative performance of MOS non-volatile memory devices with Silicon and Germanium nanoparticles embedded gate oxide’ International Conference on Fundamental & Application of Nano science & Technology (ICFANT-2010), Jadavpur University, Kolkata, Dec 9-11, 2010.

31. A. Sengupta, S. Maji, P. Bhattacharyya, H. Saha, ‘Synthesis, characterization and methane sensing properties of CBD grown aligned zinc oxide nanorods’, International Conference on Advanced Nanomaterials & Nanotechnology (ICANN-2009)IIT-Guwahati, Dec 2009.

National Conference Publications

1. M. Guha, A. Sengupta, M. Sahoo and H. Rahaman, 'Effect of defects on performance and signal integrity of multilayer GNR interconnects', INUP Compact modeling workshop, IISc, Bangalore, 22 - 23 August, 2014.

2. A. Mukhopadhyay, L. Banerjee, A. Sengupta and H. Rahaman, 'ON current variations in AGNR-FET due to intrinsic rippling', INUP Compact modeling workshop, IISc, Bangalore, 22 - 23 August, 2014.

3. A. Sengupta, S. Maji, H. Saha, ‘Low temperature CBD grown ZnO nanostructures on Pd catalyst embedded Porous Silicon (PS) and other substrates’, Metallix-2010, 26-27 Feb 2010, Jadavpur University Kolkata. (Awarded 2nd prize in Technical Paper Presentation).

4. A. Sengupta, ‘Graphene: The Rising Star of Materials Science’, Metallix-2009, Jadavpur University, Kolkata, Feb 26-27, 2009.

5. A. Sengupta, C.K. Sarkar, ‘Recent Developments in Nanoparticle Embedded Gate Dielectric MOS Non-Volatile Memories’, National Conference On Engineering Education in the new Century (E2NC-2011), Sir J.C. Bose School of Engg., SKF Group of Institutions, Hooghly, Jan 20-21, 2011.

Invited Talks

1. Resource Person: ATAL-FDP on "Nanodevices and Advanced Nanomaterials" organized by AICTE ATAL Academy and Sikkim Manipal Institute of Technology (SMIT) held at Sikkim Manipal Institute of Technology, Sikkim, 6th - 10th Dec. 2021.

2. Invited Talk -  "An ab-initio study of 2 dimensional metal (Cu, Ag) - 1T’ ReS2 van der Waals heterostructure", at 2021 Devices for Integrated Circuit (DevIC), 19-20 May, 2021 Kalyani Govt. Engg. College, Kalyani, India.

3. Invited Webinar Talk  "An introduction to Nano: the fascinating world of nanotechnology" , Salesian College, Siliguri Campus, 11th Jan 2021.

4. Invited speaker at IEEE International Symposium on Devices, Circuits and Systems (ISDCS 2018), Talk:"Modeling the 2D flatland: new paradigm for nanoelectronics", IIEST, Shibpur, 29-31 March, 2018.

5. Invited speaker School on Electronic Transport and Magnetism: From Fundamentals to Applications-2016, Talk: "Atomistic simulation of low dimensional systems for quantum transport", held at Harishchandra Research Institute (HRI), Allahabad, India, 22 February  - 2nd March , 2016.

6. Invited speaker at CEFIPRA Indo-French Workshop on Emerging Trends in Electron Device Modeling, Talk: "Study of next generation 2D and 1D  channel material MOSFETs"  held at Indian Institute of Science, Bangalore,30 March -1 April, 2015.

7. Invited speaker CeCAM Workshop on High performance models for charge transport in large scale materials systems, Talk: "Study of next generation 2-D channel material MOSFETs with empirical tight binding – NEGF formalism", held at Bremen Center for Computational Materials Science (BCCMS), Universität Bremen, Germany, 5-10 October, 2014.

8. Invited speaker at the INUP Compact modeling workshop, held at Indian Institute of Science, Bangalore, 22 - 23 August, 2014.

9. Invited technical talk “2-Dimensional Channel Materials based Next Generation Nano-scale MOS devices”, at National Institute of Technology, Sikkim, 05 March, 2014.

10. Resource Person: Faculty Development Program on Micro and Nanoelectronics, sponsored by VTU and VGST, held at Guru Nanak Dev Engg. College(GNDEC), Bidar, Karnataka, 6th -9th  August 2013.

11. Invited technical talk “Exploration of Two Dimensional Channel Materials for Next Generation CMOS Technology” and “Current Trends in MOS non-volatile memories: Nanoscale Engineering and Emerging Devices”, organized by IEEE Electron Devices Society , Kolkata Chapter, held at Jadavpur University, 23 Nov. 2012.