Publication

李佩雯論文著述： 

期刊論文

1. Chih-Hsuan Lin, Po-Yu Hong, Bing-Ju Lee, Horng-Chih Lin, Thomas George, and Pei-Wen Li, “Self-organized germanium quantum-dots/Si3N4 enabling monolithic integration of top Si3N4-waveguided microdisk light emitters and PIN photodetectors for on-chip sensing,” IEEE Trans. Electron Dev. vol. 70, no. 4, pp. 2113-2120, April 2023, doi: 10.1109/TED.2023.3238330

2. C. C. Lai, R. C. Pan, I. H. Wang, T. George, H. C. Lin, and P. W. Li, “Germanium spherical quantum-dot single-hole transistors with self-organized tunnel barriers and self-aligned electrodes,” IEEE J. Electron Dev. Soc. vol. 11, 54–59 DOI: 10.1109/JEDS.2023.3235386

3. Po-Yu Hong, Chin-Hsuan Lin, I-Hsiang Wang, Yu-Ju Chiu, Bing-Ju Lee, Jiun-Chi Kao, Chun-Hao Huang, Horng-Chih Lin, Thomas George, and Pei-Wen Li, “The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms,” Appl. Phys. A. vol. 129, 126, 10.1007/s00339-022-06332-z

4. Cheng-Kuei Lee, Kun-Ming Chen, Guo-Wei Huang, Pei-Wen Li, Horng-Chih Lin, “Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain”, Jpn. J. Appl. Phys..

5. Ting Tsai, Horng-Chih Lin, and Pei-Wen Li, 2022, “Temperature-dependent narrow width effects of 28-nm CMOS transistors for cold electronics," IEEE J. Electron Dev. Soc. vol. 10, pp. 289–296 DOI:10.1109/JEDS.2022.3163251 

6. Po-Yu Hong, Bing-Ju Lee, Rong-Zong Yang, Horng-Chih Lin, and Pei-Wen Li, 2022, “Self-aligned transparent-gate ITO/Germanium nanospheres/SiO2/SiGe-nanosheets photoMOSFETs on silicon nitride platform,” IEEE J. Electron Dev. Soc. vol. 10, pp. 263–268 DOI: 10.1109/JEDS.2022.3157741   

7. I-Hsiang Wang, Po-Yu Hong, Kang-Ping Peng, Horng-Chih Lin, Thomas George, and Pei-Wen Li, 2021, “Germanium quantum-dot array with self-aligned electrodes for quantum electronic devices, ” Nanomaterials, vol. 11, 2743. DOI: 10.3390/nano11102743

8. Chen-Kwei Lee, Ying-Yu Liu, Kun-Ming Chen, Guo-Wei Huang, Pei-Wen Li, Horng-Chih Lin, 2021, “Static and radio-frequency characteristics of green-nanoseconds laser-crystallized poly-Si thin-film transistors,” ECS J. Solid State Sci. Technol. vol. 10, no. 7, 075010. DOI: 10.1149/2162-8777/ac170e

9. You Tai Chang, Ruei Jen Wu, K. P. Peng, Chun Jung Su, P. W. Li, and Horng-Chih Lin, 2020, “Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors” Vacuum, vol. 181, 109612 (2020) DOI: 10.1016/j.vacuum.2020.109613

10. K. P. Peng, Y. H. Kuo, L. S. Chang, T. George, H. C. Lin, and P. W. Li, 2020, “Silicon nitride engineering: role of hydrogen-bonding in Ge quantum dot formation,” Semiconductor Science and Technology, vol. 35, 105018 . DOI: 10.1088/1361-6441/abaa2a. 

11. H. Y. Chen, K. P. Peng, T. George, H. C. Lin, and P. W. Li, 2020, “Coordinated and simultaneous formation of paired Ge quantum dots by thermal oxidation of designer poly-SiGe spacer structures,” IEEE Trans. Nanotechnology, vol. 19, pp. 436438. DOI: 10.1109/TNANO.2020.2991429

12. Y. T. Chang, Y. L. Tsai, K. P. Peng, C. J. Su, P. W. Li, and H. C. Lin, 2020, “Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor” IEEE Trans. Nanotechnology, vol. 19, pp. 338343. DOI: 10.1109/TNANO.2020.2987824

13. Y. H. Kuo, S. H. Chiu, C. W. Tien, S. D. Lin, W. H. Chang, H. C. Lin, and P. W. Li, 2020, “Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime”, Nano Future, vol. 4, 015001 DOI: 10.1088/2399-1984/ab794d. (cited number: 1—2021/07/20)

14. Y.-A. Huang, C.-Y. Liang, K.-P. Peng, K.-M. Chen, G.-W. Huang, P.-W. Li, and H.-C. Lin, 2020, “A unique approach to generate self-aligned T-Gate transistors in counter-doped poly-Si with high etching selectivity and isotropy” IEEE Elect. Dev. Lett. vol. 41, no.3, pp. 397-400, DOI: 10.1109/LED.2020.2970756  

15. Y. A. Huang, K. P. Peng, Y. C. Meng, C. J. Su, P. W. Li, and H. C. Lin, 2020, "A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors," Jpn. J. Appl. Phys., vol. 59, SGGJ01 (2020). DOI: 10.7567/1347-4065/ab650a (cited number: 1—2021/07/20)

16. Y. T. Chang, Y. L. Tsai, K. P. Peng, C. J. Su, P. W. Li, and H. C. Lin, 2020, “Study on Random Telegraph Noise of High-κ/Metal-Gate Gate-All-Around Poly-Si Nanowire Transistors”, Jpn. J. Appl. Phys., vol. 59, SGGA04 (2020). DOI: 10.7567/1347-4065/ab5b67

17. A. Nadtochiy, V. Kuryliuk, V. Strelchuk, O. Korotchenkov, P. W. Li, and S. W. Lee, 2019, “Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features,” Scientific Reports, vol. 9, 16335 (2019). DOI: 10.1038/s41598-019-52654-z (cited number: 2—2021/07/20)

18. T. L. Huang, K. P. Peng, H. C. Lin, T. George, and P. W. Li, 2019, “Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe,” Scientific Reports, vol. 9, 11303 (2019). DOI:10.1038/s41598-019-47806-0 (cited number: 1—2021/07/20)

19. K. P. Peng, T. L. Huang, T. George, H. C. Lin, and P. W. Li, 2019, “Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications”, Nanotechnology, vol. 30, 405201. DOI: 10.1088/1361-6528/ab2d4a (cited number: 1—2021/07/20)

20. C. T. Chen, K. P. Peng, T. George, H. C. Lin, and P. W. Li, 2019, “Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheres,” AIP Advances, vol. 9(5), 055330 (2019). DOI:10.1063/1.5088554

21. M. H. Wu, H. C. Lin, and P. W. Li, 2019, “Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high voltage operation”, Jpn. J. Appl. Phys., vol. 58(6), 066502 (2019). (cited number: 1—2021/07/20)

22. M. H. Wu, P. W. Li, and H. C. Lin, 2019, “Submicronp-type SnO thin-film transistors fabricated by film profile engineering method,” IEEE Trans. Electr. Dev., vol. 66, no. 4, 17661771 (2019)

23. Po-Hsiang Liao, Kang-Ping Peng, Horng-Chih Lin, Thomas George, and Pei-Wen Li, 2018, “Self-organized Ge nanospherical gate/SiO2/Si0.15Ge0.85–nanosheet n-FETs featuring high ON-OFF drain current ratio,” IEEE J. Electron Dev. Soc. vol. 7, 4651 (2018). doi: 10.1109/JEDS.2018.2876519. (cited number: 4—2021/07/20)

24. T. George, T. L. Huang, C. Y. Hsueh, K. P. Peng, M. H. Kuo, H. C. Lin, and P. W. Li, 2018, “The Germanium “Halo”: Visualizing invisible Ge interstitials,” Jpn. J. Appl. Phys. vol. 57, 105502 (2018/09)

25. You-Tai Chang, Kang-Ping Peng, Pei-Wen Li, and Horng-Chih Lin, 2018, “Fabrication and characterization of novel gate-all-around polycrystalline silicon junctionless field-effect transistors with ultrathin horizontal tube-shape channel,” Jpn. J. Appl. Phys., vol. 57 (4S): 04FP06.

26. P. H. Liao, K. P. Peng, Horng-Chih Lin, Tom George, and Pei-Wen Li, 2018, “Single-fabrication-step Ge Nanosphere/SiO2/SiGe heterostructures: A key enabler for realizing Ge MOS devices,” Nanotechnology, vol. 29, 205601 (2018/03). (cited number: 4—2021/07/20)

27. Ming-Hao Kuo, Po-Yu Hong, Ping-Che Liu, Meng-Chun Lee, Horng-Chih Lin, Tom George, and Pei-Wen Li, 2017, “Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation”, Optics Express, vol. 25, no. 21, 25467. (cited number: 5—2021/07/20)

28. Chin-I Kuan, Horng-Chih Lin, Pei-Wen Li, and Tiao-Yuan Huang, 2017, “Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts,” IEEE Trans. Electron Device, vol. 64, 28492853. (2017/07). (cited number: 5—2021/07/20)

29. M. H. Kuo, Meng-Chun Lee, Horng-Chih Lin, Tom George, and Pei-Wen Li, 2017, “High photoresponsivity Ge-dot photoMOSFETs for low-power monolithically-integrated Si optical interconnects,” Scientific Report, vol. 7, 44402. (cited number: 12—2021/07/20)

30. T. George, P. W. Li, K. H. Chen, K. P. Peng, and W. T. Lai, 2017 ““Symbiotic” semiconductors: unusual and counter-intuitive Ge/Si/O interactions,” Journal of Physics D: Applied Physics, vol. 50, 105101. (2017/3) (cited number: 12—2021/07/20)

31. R. J. Lyu, B. S. Shie, H. C. Lin, P. W. Li, and T. Y. Huang, 2017, “Downscaling metal-oxide thin-film transistors to sub-50nm in an exquisite film-profile engineering approach,” IEEE Trans. Electron Device, vol. 64, 1069 (2017/2) 

32. M. H. Kuo, S. K. Chou, Y. W. Pan, S. D. Lin, T. George, and P. W. Li, 2016, ““Embedded Emitters”: Direct bandgap Ge nanodots within SiO2,” J. Appl. Phys., vol. 120, 233106 (2016/12) (cited number: 5—2021/07/20)

33. R. J. Lyu, H. C. Lin, P. W. Li, and T. Y. Huang, 2016, “A Film-profile-engineered three-dimensional InGaZnO inverter technology with systematically tunable threshold voltage”, IEEE Trans. Electron Device, vol. 63, 3533 (2016/9). (citation number: 1—2021/07/20)

34. Ching-Chi Wang, Wei-Ting Lai, Yi-Yeh Hsiao, Inn-Hao Chen, Tom George, Pei-Wen Li, 2016, “Geometry-dependent phase, stress state and electrical properties in nickel-silicide nanowires," Journal of Physics D: Applied Physics, vol. 49, 204102. (citation number: 1—2021/07/20)

35. Chin-I Kuan, Horng-Chih Lin, Pei-Wen Li, and Tiao-Yuan Huang, 2016 “High-Performance Submicron ZnON Thin-Film Transistors with Record Field-Effect Mobility,” IEEE Electron Device Lett., vol. 37, no. 3, 303. (citation number: 9—2021/07/20)

36. Wei-Ting Lai, Kuo-Ching Yang, Po-Hsiang Liao, Tom George, and Pei-Wen Li, 2016, “Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors,” Frontiers in Materials, vol. 3, 00005. (citation number: 5—2021/07/20)

37. Shuo-Huang Yuan, Zing-Way Pei, Pei-Wen Li, Yi-Jen Chan, 2015, “Au Nanoparticle Light Scattering Enhanced Responsivity in Pentacene Phototransistor for Deep-UV Light Detection,” IEEE Electron Device Letters, vol. 36, 1186. (2015/11) (citation number: 6—2021/07/20)

38. S. H. Yuan, Z. Pei, H.C. Lai, P.W. Li, and Y.J. Chan, 2015, “Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration,” Organic Electronics, vol. 27, 711. (2015/8) (citation number: 10—2021/07/20)

39. W. T. Lai, K. C. Yang, T. C. Hsu, P. H. Liao, T. George, and P. W. Li, 2015, “A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step,” Nanoscale Research Letters, vol. 10, 224. (2015/05) (citation number: 10—2021/07/20)

40. M. H. Kuo, W. T. Lai, S. W. Lee, and P. W. Li, 2015, “Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection,” Optics Letters, vol. 40, 2401-2404. (2015/5) (citation number: 2—2021/07/20)

41. M. H. Kuo, W. T. Lai, T. M. Hsu, and P. W. Li, 2015, “Designer germanium quantum dot phototransistor for near infrared optical detection and amplification,” Nanotechnology, vol. 26, 055203. (2015/1) (citation number: 21—2021/07/20)

42. K. H. Chen, C. C. Wang, W. T. Lai, T. George, and P. W. Li, 2015, “The pivotal role of oxygen interstitials in the dynamics of growth and movement of germanium nanocrystallites,” CrystEngComm, vol. 17, 6370 – 6375. (citation number: 4—2021/07/20)

43. O. Korotchenkov, A. Nadtochiy, V. Kuryliuk, Chin-Chi Wang, and Pei-Wen Li, 2015, “A model for predicting the thermal conductivity of SiO2/Ge nanoparticle composites,” Physical Chemistry Chemical Physics, vol. 17, 13429. (citation number: 15—2021/07/20)

44. Po-Hsiang Liao, Ting-Chia Hsu, Kuan-Hung Chen, Tzu-Hsuan Cheng, Tzu-Min Hsu, Ching-Chi Wang, Tom George, and P. W. Li, 2014 “Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4,” Appl. Phys. Letts. vol. 105, 172106. (citation number: 19—2021/07/20)

45. K. H. Chen, C. C. Wang, Tom George, and P. W. Li, 2014, “The pivotal role of SiO formation in the migration and Ostwald Ripening of Ge quantum dots,” Appl. Phys. Lett., vol. 105, 122102. (citation number: 17—2021/07/20)

46. K. H. Chen, C. C. Wang, Tom George, and P. W. Li, 2014, “The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient”, Nanoscale Research Letter, vol. 9, 339. (citation number: 6—2017/10/11) (citation number: 13—2021/07/20)

47. I. H. Chen, W. T. Lai, and P. W. Li, 2014, “Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime,” Appl. Phys. Lett., vol. 104, 243506. (citation number: 3—2021/07/20)

48. Chung-Yen Chien, Yu-Jui Chang, Ching-Chi Wang, Ming-Hao Kuo, Wei-Ting Lai, and Pei-Wen Li, 2014, “Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merits,” Nanoscale, 6 (10), 5303 – 5308. (citation number: 30—2021/07/20)

49. O. Korotchenkov, A. Nadtochiy, V. Kuryliuk, Chin-Chi Wang, Pei-Wen Li, A. Cantarero, 2014, “Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces,” European Physical Journal B, vol. 87, 64. (citation number: 8—2021/07/20)

50. W. T. Lai, P. H. Liao, A. P. Homyk, A. Scherer, and P. W. Li, 2013, “SiGe quantum dots over Si pillars for visible to near-infrared photodetection,” IEEE Photonic Technology Lett. vol. 25, 1520. (citation number: 13—2021/07/20)

51. Chi-Hsien Huang, Ching-Yuan Su, Takeru Okada, Lain-Jong Li, Kuan-I Ho, Pei-Wen Li, Inn-Hao Chen, Chien Chou, Seiji Samukawa, Chao-Sung Lai, 2013, “Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam", CARBON, vol. 61, 229. (citation number: 32—2021/07/20)

52. C. C. Wang, P. H. Liao, M. H. Kuo, Tom George, and P. W. Li, 2013, “The curious case of exploding quantum dots: Anomalous migration and growth behavior of Ge under Si oxidation,” Nanoscale Research Lett. vol. 8, 192. (citation number: 10—2021/07/20

53. Hung-Tai Chang, Ching-Chi Wang, Jung-Chao Hsu, Ming-Tsung Hung, Pei-Wen Li, Sheng-Wei Lee, 2013, “High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials,” Applied Physics Letters, vol. 102, 101902. (citation number: 12—2021/07/20)

54. M. T. Hung, C. C. Wang, J. Y. Chiou, J. C. Hsu, S. W. Lee, T. M. Hsu, P. W. Li*, 2012, “Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system,” Applied Physics Letters, vol. 101, 251913. (citation number: 7—2021/07/20)

55. M. H. Kuo, C. C. Wang, W. T. Lai, Tom George, and P. W. Li*, 2012, “Designer Ge quantum dots on Si: A heterostructure configuration with enhanced optoelectronic performance,” Applied Physics Letters, vol. 101, 223107. (citation number: 24—2021/07/20)

56. I. H. Chen, K. H. Chen, D. M. T. Kuo, and P. W. Li*, 2012, “Single germanium quantum-dot placement along with self-aligned electrodes for effective management of single charge tunneling,” IEEE Trans. Electron Devices, vol. 59, p. 3224. (citation number: 5—2021/07/20)

57. C. Y. Chien, J. W. Hsu, P. C. Chiu, J. I. Chyi, and P. W. Li, 2012, “Gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs pMOS capacitors,” Active and Passive Electronic Components.

58. C. C. Wang, K. H. Chen, I. H. Chen, H. T. Chang, W. Y. Chen, J. C. Hsu, S. W. Lee, T. M. Hsu, M. T. Hung, and P. W. Li*, 2012, “CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications,” IEEE Trans. Nanotechnology, vol. 11, no. 4, p. 657-660. (citation number: 8—2021/07/20)

59. J. E. Chang, P. H. Liao, C. Y. Chien, J. C. Hsu, M. T. Hung, H. T. Chung, S. W. Lee, W. Y. Chen, T. M. Hsu, T. George, and P. W. Li, 2012, “Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots,” Journal of Physics D: Applied Physics, vol. 45, 105303. (citation number: 27—2021/07/20)

60. C. Y. Chien, Y. J. Chang, K. H. Chen, W. T. Lai, T. George, A. Scherer, and P. W. Li, 2011, “Nanoscale, catalytically-enhanced local oxidation of silicon-containing layers by “burrowing” Ge quantum dots,” Nanotechnology, vol. 22, p. 435602. (citation number: 30—2021/07/20)

61. Edward S Yang, Pei-Wen Li, Bernd Nilius, and Geng Li, 2011, “Ancient Chinese medicine and mechanistic evidence of acupuncture physiology,” Pflugers Archiv-European Journal of Physiology, vol. 462, p. 645-653. (citation number: 47—2021/07/20)

62. Geng Li, Jieming Liang, Pei-Wen Li, Xiaoqiang Yao, Peter Zhong Pei, Wei Li, Qi-Hua He, Xifei Yang, Queenie CC Chan, Paul YS Cheung, Qi Yuan Ma, Siu Kam Lam, Patrick YC Cheng, Edward S. Yang, 2011, ”Physiology and cell biology of acupuncture observed in calcium signaling activated by acoustic shear wave,” Pflugers Archiv-European Journal of Physiology, vol. 462, p. 587-597. (citation number: 15—2021/07/20)

63. K. H. Chen, C. Y. Chien, W. T. Lai, T. George, A. Scherer, and Pei-Wen Li, 2011, “Controlled heterogeneous nucleation and growth of germanium quantum dots on nanopatterned silicon dioxide and silicon nitride substrates,” Crystal Growth & Design, vol. 11, p. 3222-3226. DOI: 10.1021/cg200470f. (citation number: 8—2021/07/20)

64. W. T. Lai, C. W. Wu, C. C. Lin, and P. W. Li, 2011, “Analysis of carrier transport in trigate Si nanowire MOSFETs,” IEEE Trans. Electron Devices, vol. 58, p. 1336-1343. (citation number: 6—2021/07/20)

65. Hsing-Wang Tsai, Zing-Way Pei, Ting-Hsiang Huang, Pei-Wen Li, Yi-Jen Chan, 2011, “Anode engineering in a polymer solar cell and applied on plastic substrate,” Solar Energy Materials and Solar Cells,” vol. 95, p. 611. (citation number: 1—2021/07/20)

66. C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, W. Y. Chen, T. M. Hsu, and P. W. Li, 2010, “Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics,” Nanotechnology, vol. 21, p. 505201 (citation number: 10—2021/07/20)

67. Po-Yuan Lo, Pei-Wen Li, and Yi-Jen Chan, 2010, “Stability improvement of organic thin-film transistors using stacked gate dielectrics,” IEEE Trans. Electron Devices, vol. 57, p. 3131. (citation number: 1—2021/07/20)

68. Hsing-Wang Tsai, Zing-Way Pei, Ting-Hsiang Huang, Pei-Wen Li, Yi-Jen Chan, 2010, “A conductor/insulator/semiconductor polymer solar cell by an ultra-thin polymer insulator,” Organic Electronics, vol. 11, p. 1796–1801. (citation number: 8—2021/07/20)

69. H. K. Lin, D. W. Fan, Y. C. Lin, P. C. Chiu, C. Y. Chien, P. W. Li, J. I. Chyi, C. H. Ko, T M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann, 2010, “E-beam-evaporated Al2O3 for InAs/AlSb metal–oxide–semiconductor HEMT development,” Solid-State Electronics, vol. 54, p. 505. (citation number: 20—2021/07/20)

70. K. H. Chen, C. Y. Chien, and P. W. Li, 2010, “Precise Ge quantum dot placement for quantum tunneling devices,” Nanotechnology, vol. 21, 055302. (citation number: 31—2021/07/20)

71. I. H. Chen, S. S. Tseng, and P. W. Li, 2009, “Thermal stability of germanium quantum dots phototransistors for near ultra-violet applications,” IEEE Photonics Technology Letters, vol. 21, p. 1674. (citation number: 1—2021/07/20)

72. J. R. Chen, H. T. Lin, G. W. Hwang, Y. J. Chan and P. W. Li, 2009, “The temperature-dependent physical and electrical characteristics of a polymer/RAFT-polymer stabilized nanoparticle system for organic nonvolatile memory,” Nanotechnology, vol. 20, 255706. (citation number: 11—2021/07/20)

73. P. Y. Lo, P. W. Li, Z. W. Pei, J. Hou, and Y. J. Chan, 2009, “Enhanced P3HT OTFT transport performance using double gate modulation scheme,” IEEE Electron Device Letters, vol. 30, 629. (citation number: 13—2021/07/20)

74. W. T. Lai, D. M. T. Kuo, and P. W. Li, 2009, “Transient current through a single germanium quantum dot at room temperature”, Physica E, vol. 41, 886-889. (citation number: 15—2021/07/20)

75. S. S. Tseng, I. H. Chen, and P. W. Li, 2008, “Photoresponses in polycrystalline Si phototransistors incorporating germanium quantum dots in the gate dielectrics,” Applied Physics Letters, vol. 93, p. 191112. (citation number: 8—2021/07/20)

76. S. S. Tzeng and P. W. Li, 2008, “Enhanced 400-600 nm photoresponsivity of metal-oxide- semiconductor diodes with multi-stack germanium quantum dots,” Nanotechnology, vol. 19, 235203. (citation number: 25—2021/07/20)

77. G. L. Chen, D. M. T. Kuo, W. T. Lai, and P. W. Li, 2007, “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” Nanotechnology, vol. 18, p. 475402. (citation number: 22—2021/07/20)

78. T. -H. Lee, C. -H. Huang, Y. -Y. Yang, T. Suryasindhu, and P. W. Li, 2007, “Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer,” Applied Physics Letters, vol. 91, p.203119. (citation number: 5—2021/07/20)

79. T. -H. Lee, Y. -Y. Yang, C. -H. Huang, P. W. Li, and T. Suryasindhu, 2007, “Fabrication of a nano-scale single crystalline silicon thin film on insulator,” Electrochemical and Solid-State Letters, vol. 10, K17-19. (citation number: 2—2021/07/20)

80. S. Maikap, P. J. Tzeng, C. H. Lin, T. Y. Wang, H. Y. Lee, S. S. Tzeng, C. C. Wang, T. C. Tien, L. S. Lee, P. W. Li, J. R. Yang and M. J. Tsai, 2007, “TiN nanocrystal flash memory devices,” International Journal of Nanomanufacturing, vol. 2, no. 5, p. 407-419. (invited paper) (EI)

81. W. T. Lai and P. W. Li, 2007, “Growth kinetics and related physical/electrical properties of Ge quantum-dots formed by thermal oxidation of Si1-xGex-on-insulator,” Nanotechnology, vol. 18, p. 145402. (SCI, IF : 3.5) (citation number: 26—2021/07/20)

82. Y. C. Hsu, W. T. Lai, P. W. Li, and D. M. T. Kuo, 2007, “Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes,” Physica E, vol. 38, p.135-138. (SCI, IF : 1.1) (citation number: 3—2021/07/20)

83. J. H. Wu and P. W. Li, 2007, “Ge nanocrystals metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12,” Semiconductor Science and Technology, vol. 22, p. S89-S92. (SCI, IF : 1.6) (citation number: 28—2021/07/20)

84. P. W. Li, M. T. Kuo, and Y. C. Hsu, 2006, “Photo-excitation effects on carrier transports in Germanium quantum dot resonant tunneling diodes,” Applied Physics Letters, vol. 89, p.133105. (SCI, IF : 4.2) (citation number: 4—2021/07/20)

85. P. W. Li, M. T. Kuo, W. M. Liao, and W. T. Lai, 2006, “Study of tunneling currents through germanium quantum dot single-hole and -electron transistors,” Applied Physics Letters. vol. 88, p. 213117 (SCI, IF: 4.2) (citation number:12—2021/07/20)

86. Also selected for the June 12, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

87. W. M. Liao, P. W. Li, M. T. Kuo and W. T. Lai, 2006, “Room-temperature transient carrier transport in germanium single-hole/electron transistors,” Applied Physics Letters, vol. 88, p. 182109. (SCI, IF: 4.2) (citation number: 8—2021/07/20)

88. Also selected for the May 22, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

89. M. T. Kuo and P. W. Li, 2006, “Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors,” Jpn. J. Appl. Physics, vol. 45, no. 4A, p. 2281-2287. (SCI, IF : 1.3)

90. Huang, C.H.; Chang, C.L.; Yang, Y.Y.; Suryasindhu, T.; Liao, W.-C.; Su, Y.-H.; Li, P.W.; Liu, C.-Y.; Lai, C.S.; Ting, J.-H.; Chu, C.S.; Lee, C.-S.; Lee, T.-H., 2006, “Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer,” Materials Research Society Symposium Proceedings, v 921, p 84-89. (EI)

91. S. S. Liu, P. W. Li, W. H. Lan, and W. J. Lin, 2006, “The improvement of GaN p-i-n UV sensor by 8-pairs AlGaN/GaN superlattices structure,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 124, no. 1, p. 33-36. (SCI, IF : 1.6) (citation number: 7—2021/07/20)

92. W. M. Liao and P. W. Li, 2005, “Temperature stability of SiGe dynamic threshold-voltgae MOSFETs,” Japanese Journal of Applied Physics, vol. 44, no. 12, p.8453-8455. (SCI, IF : 1.28)

93. S. S. Liu, P. W. Li, W. H. Lan, and W. J. Lin, 2005, “Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN Layer for the UV-B (280-320 nm) detection,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 122, no. 9, p. 196-200. (SCI, IF : 1.6) (citation number: 8—2021/07/20)

94. M. T. Kuo and P. W. Li, 2005, “Tunneling current through a single Germanium quantum dot,” Japanese Journal of Applied Physics, vol. 44, no. 9A, p.6429-6434. (SCI, IF : 1.28) (citation number: 4—2021/07/20)

95. S. S. Liu, P. W. Li, and W. J. Lin, 2005, “The improvements of GaN p-i-n UV sensor on 10 off-axis sapphire substrate,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 121, no. 7, p. 85-91. (SCI, IF : 1.6) (citation number: 4—2021/07/20)

96. S. S. Liu, P. W. Li, W. H. Lan, and W. J. Lin, 2005, “High temperature high humidity and electrical static discharge stress effects on GaN PIN UV sensor,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 121, no. 7, p. 29-33. (SCI, IF : 1.6) (citation number: 4—2021/07/20)

97. P. W. Li, W. M. Liao, M. T. Kuo, S. S. Tseng, P. S. Chen, and M. –J. Tsai, 2004, “Optical and electronic properties of Ge quantum dots formed by selective oxidation of SiGe/Si-on-Insulator,” Japanese Journal of Applied Physics, vol. 43, no. 11 A, p. 7788-7792. (SCI, IF : 1.28) (citation number: 15—2021/07/20)

98. P. W. Li, W. M. Liao, M. T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, and M. –J. Tsai, 2004, “Fabrication of a germanium quantum-dot single electron transistor with large Coulomb-blockade oscillations at room temperatures,” Applied Physics Letters, vol. 85, p. 1532. (SCI, IF : 4.3) (citation number: 49—2021/07/20)

99. Also selected for the Sep. 13, 2004 issue of Virtual Journal of Nanoscale Science & Technology.

100. P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen, S. C. Lu, and M. –J. Tsai, 2003, “Formation of atomic-scale Germanium quantum dots by selective oxidation of SiGe/Si-on-Insulator,” Apply Physics Letters, vol. 83, p.4628-4630. (SCI, IF : 4.3) (citation number: 29—2021/07/20)

101. Also selected for the December 8, 2003 issue of Virtual Journal of Nanoscale Science & Technology.

102. P. W. Li, W. M., Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, and M. –J. Tsai, 2003, “Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low power circuit applications,” IEEE Electron Device Letters, vol. 24, no. 7, p.454-456. SCI, IF : 2.7) (citation number: 2—2021/07/20)

103. Y. S. Huang, C. J. Lin, C. H. Wang, N. Y. Li, C. C. Fan, and P. W. Li, 2003, “Photoreflectance and surface photovoltage spectroscopy characteristics of an InGaP/InGaAsN/GaAs NPN DHBT structure,” IEE Proceedings-Optoelectronics, vol. 150, no. 1, p. 99-101. (SCI, IF : 1.2)

104. P. W. Li, W. M., Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, and M. –J. Tsai, 2003, “High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications,” Solid-State Electronics, vol. 47, no. 6, p. 1095-1098. (SCI, IF : 1.2) (citation number: 4—2021/07/20)

105. P. W. Li and W. M. Liao, 2002, “Low-frequency noise analysis of Si/SiGe channel pMOSFETs,” Solid-State Electronics, vol. 46, no. 12, p. 2281-2285. (SCI, IF : 1.2) (citation number: 9—2021/07/20)

106. P. W. Li and W. M. Liao, 2002, “Design of high speed Si/SiGe heterojunction complementary MOSFETs with reduced short-channel effects,” J.Vacuum Science and Technology A, vol. 20, p.1030-1033. (SCI, IF : 1.6) (citation number: 1—2021/07/20)

107. P. W. Li and W. M. Liao, 2002, “Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling”, Solid State Electronics, vol. 46, p.39-44. (SCI, IF : 1.2) (citation number: 13—2021/07/20)

108. J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, and P. W. Li, 2001, “Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical cavity surface emitting laser structure: angle dependence,” Apply Physics Letters, vol. 79, no. 20, p.3227-3229. (SCI, IF : 4.3) (citation number: 9—2021/07/20)

109. C. J. Lin, Y. S. Huang, N. Y. Li, P. W. Li and K. K. Tiong, 2001, "Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure", Journal of Applied Physics, Vol. 90, p.4565-4569. (SCI, IF : 2.1) (citation number: 7—2021/07/20)

110. P. W. Li, H. C. Guang, and N. Y. Li, 2000, “Ellipsometric study of the optical properties of InGaAsN layers,” Japanese Journal Applied Physics, vol.39, no.9AB, pp. L898-900. (SCI, IF : 1.28) (citation number: 7—2021/07/20)

111. P. W. Li, N. Y. Li, and Q. Hong, 2000, “Effects of ex-situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors,” Solid-State Electronics, vol.44, pp.1169-1172. (SCI, IF : 1.2) (citation number: 1—2021/07/20)

112. N. Y. Li, C. P. Hains, K. Yang, J. Lu, P. W. Li, and J. Cheng, 1999, “Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 m GaInNAs three-quantum-well laser diodes”, Apply Physics Letters, vol. 75, p.1051-1053. (SCI, IF : 4.6) (citation number: 27—2021/07/20)

113. S. W. Chan, L. Zhao, C. Chen, P. W. Li, and E. S. Yang, 1995, “High performance oxide on SiGe and the interface,” Microscopy of Semiconducting Materials, Institute of Physics Conference series 146: 491-494. (SCI, IF : 1.0) (citation number: 1—2021/07/20)

114. P. W. Li, E. S. Yang, Y. F. Yang, and X. Li, 1995, “Electron Cyclotron resonance Microwave Plasma Enhanced SiGe Oxidation and MOS Transistors,” Inst. Phys. Conf., No. 141, Chap 6, p. 711-716. (SCI, IF : 1.0)

115. P. W. Li, E. S. Yang, Y. F. Yang, J. Chu, and B. S. Meyerson, 1994, “SiGe pMOSFETs with gate oxide fabricated by microwave electron cyclotron resonance plasma”, IEEE Electron Device Letters, vol. 15, p.402-405. (SCI, IF : 2.7) (citation number: 44—2021/07/20)

116. P. W. Li and E. S. Yang, 1993, “SiGe gate-oxide prepared at low-temperatures in an electron   cyclotron resonance plasma”, Apply Physics Letters, vol. 63, p.2938-2940. (SCI, IF : 4.6) (citation number: 34—2021/07/20)

117. P. W. Li, H. K. Liou, E. S. Yang, S. S. Iyer, T. P. Smith III, and Z. Lu, 1992, “Formation of Stoichiometric SiGe Oxide by Electron Cyclotron Resonance Plasma”, Apply Physics Letters, vol. 60, p.3265- 3267. (SCI, IF : 4.6) (citation number: 31—2021/07/20)

118. P. W. Li, Q. Wang, and E. S. Yang, 1992, “Chemical and Electrical Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors Treated by Electron Cyclotron Resonance Plasma,” Apply Physics Letters, vol. 60, p.1996-1998. (SCI, IF : 4.6) (citation number: 8—2021/07/20)

119. Q. Wang, E. S. Yang, P. W. Li, Z. Lu, R. M. Osgood, and W. I. Wang, 1992, “Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors”, IEEE Electron Device Letters, vo. 13, p.83-85. (SCI, IF : 2.7) (citation number: 19—2021/07/20)

Total citation ~1900, h-index:25

研討會論文

1. Chih-Hsuan Lin, Po-Yu Hong, Bing-Ju Lee, Horng-Chih Lin, Thomas George, and Pei-Wen Li, “Monolithic Integration of Top Si3N4-Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing,” IEDM Tech. Dig. pp. 451454, Dec. 2022, San Francisco, USA (Highlight Paper)

2. Yo-Ming Chang, Ting Tsai, Horng-Chih Lin, and Pei-Wen Li, “Cold effects in the gate-drivability of 22 nm FD-SOI transistors,” IEEE SISC, Dec. 7-10, 2022, San Diego, USA

3. Yu-Ju Chiu, I-Hsiang Wang, and Pei-Wen Li, “Electrically-addressable engineering in self-assembled Ge double quantum-dots for CMOS integratable quantum electronic devices” SSDM, Chiba, Japan, Sep. 26-29 2022.

4. I-H. Wang, T. Tsai, Y.-J. Chiu, H. -C. Lin, P. W. Li, “Barrier and Self-aligned Electrode Engineering in Self-assembled Ge Quantum-dots Array for CMOS Integratable Quantum Electronic Devices,” 28th IEEE Silicon Nanoelectronics Workshop, Hawaii (2022/6/11-6/12)

5. 2. C. H. Lin and P. W. Li, “Embedded Tensile-strained Ge Quantum-dots in Si3N4/SiO2 Microdisk resonators array for light emitters,” 28th IEEE Silicon Nanoelectronics Workshop, Hawaii (2022/6/11-6/12)

6. Ron-Cun Pan, I-Hsiang Wang, Chi-Cheng Lai, Thomas George, Horng-Chin Lin, and Pei-Wen Li, “Germanium quantum-dot single-hole transistors with self-organized tunnel barriers and self-aligned electrodes using ingenious sidewall spacer and oxidation techniques,” 6th IEEE Electron Device Electron Devices Technology and Manufacturing, Japan (2022/3/07-3/09) (Best Paper Award)

7. Y. J. Yeh, P. H. Yu, C. K. Lee, P. W. Li, K. M. Chen, G. W. Huang, and H. C. Lin, “Green poly-Si TFTs: RF breakthroughs (fT/fmax = 63.6/30 GHz) by an ingenious process design for IoT modules on everything”, IEDM Tech. Dig. pp. , Dec. 2021, San Francisco, USA

8. I-Hsiang Wang, Kang-Ping Peng, Chin-Lung Chen, Horng-Chih Lin, and Pei-Wen Li, “Germanium quantum dots arrays with self-organized confinement barriers and self-aligned eectrodes for quantum-Computing Devices,” IEDMS, Nov. 18-19, 2021, Tainan, Taiwan (Best Paper Award).

9. Po-Yu Hong, Bing-Ru Li, Horng-Chih Lin, and Pei-Wen Li, “Gate-stacking heterostructure design and fabrication of self-aligned ITO/Ge dots/SiO2/SiGe photoMOSFETs for Si-based optical interconnects ,” IEDMS, Nov. 18-19, 2021, Tainan, Taiwan (Best Paper Award).

10. I-Hsiang Wang, Po-Yu Hong, Kang-Ping Peng, Horng-Chih Lin, Thomas George, and Pei-Wen Li, (invited talk), “The Wonderful World of Designer Ge Quantum Dots” SNDCT, Taiwan, May 2020. (Best Student Paper)

11. I-Hsiang Wang, Ting Tsai, Rong-Cun Pan, Po-Yu Hong, M. T. Kuo, I. H. Chen, Thomas George, H. C. Lin, and Pei-Wen Li, “Reconfigurable Germanium Quantum-Dot Arrays for CMOS Integratable Quantum Electronic Devices” VLSI Tech. Dig., JFS5-6, pp.1-2, June 2021 (Kyoto, Japan)

12. I-Hsiang Wang, Po-Yu Hong, Kang-Ping Peng, Horng-Chih Lin, Thomas George, and Pei-Wen Li, (invited talk), “The Wonderful World of Designer Ge Quantum Dots” IEDM Tech. Dig. pp. 841845, Dec. 2020, San Francisco, USA.

13. P. W. Li (invited talk), “Silicon nitride-stressor and quantum size engineering in Ge quantum-dot light emission and photoresponsivity,” ICICDT 2020, Oct. 30Nov. 2 2020, KunMing, China. 

14. Po-Yu Hong, Yu-Hong Kuo, Jung-Tsung Yang, Horng-Chih Lin, and Pei-Wen Li, “Silicon nitride-stressor engineering in Ge quantum-dot photoluminescence wavelength and photoresponsivity” oral presentation in 2020 IEEE Silicon Nanoelectronics Workshop (2020/6/11-2020/6/13)

15. Y. T. Chang, Ruei-Jen Wu, Kang-Ping Peng, Chun-Jung Su, Pei-Wen Li, and Horng-Chih Lin, “Charcteristics of Dual-gate poly-Si junctionless nanowire transistors with asymmetrical source/drain offsets,” oral presentation in 2020 IEEE Silicon Nanoelectronics Workshop (2020/6/11-2020/6/13)

16. K. P. Peng, “Room-temperature Operation of Self-organized Pairs of Ge Double Quantum Dot Qubits and Single-Electron Devices”, Sym. on Nano Device Technology (SNDT) 2020 (Best Paper Award)

17. I-Hsiang Wang, Keng-Ping Peng, Horng-Chih Lin and Pei-Wen Li, “Design and Fabrication of Self-Organized Ge Gate/SiO2/Si1-xGex-nanoshell with Raised Source/Drain for Advanced Transistors,” 4th IEEE Electron Device and Technology and Manufacturing Conference, KL Malaysia (2020/04/06-2020/04/21)

18. K. P. Peng, C. L. Chen, Y. T. Tang, D. M. T. Kuo, T. George, H C. Lin, and P. W. Li, “Self-organized pairs of Ge double quantum dots with tunable sizes and spacings enable room-temperature operation of qubit and single-electron devices,” IEDM Tech. Dig. pp. 895-898, Dec. 2019, San Francisco, USA.

19. T. George, L. S. Chang, K. P. Peng, Pei-Wen Li, “Action-at-a-distance: How weak Ge makes the mighty Silicon Nitride bend to its will!” IEDMS, October 24-25, 2019, New Taipei City Taiwan (Invited talk).

20. P. Y. Hong, M. H. Kuo, H. C. Lin, and P. W. Li, “Fabrication and Design of Self-aligned RMG ITO/SiO2/Ge quantum dot/SiGe-recess channel photoMOSFET for Si-based Optical Interconnects,” IEDMS, October 24-25, 2019, New Taipei City Taiwan (Best Paper Award).

21. H. Y. Chen, K. P. Peng, T. George, H. C. Lin and P. W. Li, “A novel placement of paired garden peapod-like Ge quantum dots by thermal oxidation of poly-SiGe/Si3N4 spacer layers encapsulating over lithographically-patterned poly-Si nanoridges”, IEDMS, October 24-25, 2019, New Taipei City Taiwan (Best Paper Award)

22. Yu-Hong Kuo, Shih-Hsuan Chiu, Horng-Chih Lin, and Pei-Wen Li, “Tunable quantum-size and matrix-strain effects on structural and optical properties of Ge quantum dots embedded within SiO2/Si3N4 matrices,” IEDMS, October 24-25, 2019, New Taipei City, Taiwan. 

23. C. L. Chen, K.P. Peng, H.C. Lin and P.W. Li, “Fabrication of Vertically-Stacking Ge Double Quantum Dots in a Self-Organization Approach,” IEDMS, October 24-25, 2019, New Taipei City, Taiwan.

24. L. H. Chang, K. P. Peng, T. George, H. C. Lin, Pei-Wen Li, “A large reduction in thermal budgets for densification and oxidation of Si3N4 mediated by exquisite Ge and Si interstitials,” IEDMS, October 24-25, 2019, New Taipei City, Taiwan.

25. P. W. Li (Invited Talk), T. L. Huang, K. P. Peng, H. C. Lin, and T. George “Tunable diameter and interspace of Ge quantum dots for Qubits and Readout Devices using highly-controllable spacers and selective oxidation of SiGe,” IEEE 13th International Conference on ASIC (ASICON), Chongqing, China (2019/10/29-2019/11/01)

26. K. P. Peng, T. L. Huang, T. George, H. C. Lin, and P. W. Li, “Low-temperature Ge/Si interstitials-mediated local densification and nanocrystallization of CVD Si3N4 for advanced Si photonics and electronics,” 51th Solid-State Device and Materials Conference, Nagoya, Japan (2019/09/02-09/15)

27. P. W. Li, (Invited Talk), “Self-organized heterostructures of Ge nanodot/SiO2/SiGe-recess channel enables high responsivity and high speed photoMOSFETs for Si Optical Interconnects”, 2019 IEEE INEC, Kuching, Malaysia (2019/07/03-07/05)

28. P. W. Li (Invited Talk), “Exquisite Ge/Si/O interactions enabled self-organized heterostructures of Ge nanodot/SiO2/SiGe-recess channel for advanced CMOS phototransistors”, 2019 ICICDT, Soochow, China (2019/6/17-6/19)

29. You-Tai Chang, Pei-Wen Li, and Horng-Chih Lin, “Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor”, oral presentation in 2019 IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan (2019/6/9-6/10)

30. Kang-Ping Peng, Tsung-Lin Huang, Thomas George, Horng-Chih Lin, Pei-Wen Li, “Feasibility of Ge double quantum dots with high symmetry and tunability in size and inter-dot spacing,” presented in 2019 IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan (2019/6/9-6/10)

31. Yu-An Huang, Yu-Hsiang Yeh, Horng-Chih Lin, Pei-Wen Li, “Structual Design of T-gate, Air-spacer Poly-Si TFTs for RF applications”, presented in 2019 IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan (2019/6/9-6/10)

32. C. T. Chen, K. P. Peng, H. C. Lin, and P. W. Li, “Evaluation of strain in SiGe nanoshells on Si created by proximal Ge quantum dots using nanobeam electron diffraction”, in 3rd Electron Devices Technology and Manufacturing, Singapore (2019/3/13-3/15)

33. P. W. Li, (Invited talk), “Precise placement of size-tunable Ge quantum dots for advanced nanoelectronics and photonics using exquisite combination of E-beam lithography and self-assembly”, Seminar on Advanced Micro & Nano Applications, Nov. 27 2018, Taipei, Taiwan.

34. P. W. Li, (Invited Talk), “Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices,” invited talk in ICSICT 2018, Nov. 1-Nov. 3, Qingdao, China.

35. S. H. Chiu, C. W. Tien, S. D. Lin, W. H. Chang, H. C. Lin, and Pei-Wen Li, 2018, “Size and matrix-strain effects on Ge quantum dots light emission” oral presentation in SSDM 2018 (2018/09/09-09/12)

36. P. H. Liao, M. H. Kuo, C. W. Tien, Y. L. Chang, P. Y. Hong, T. George, H. C. Lin, and P. W. Li, 2018, “Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platform” VLSI Tech. Dig., pp.157-158 (2018 June 19-21) (citation number: 8—2021/07/20)

37. P. Y. Hong, Y. L. Chang, H. C. Lin, and Pei-Wen Li , “Pivotal Roles of Ge gate and SiGe nanosheer for large photoresponsivity of photoMOSFETs”, oral presentation in 2018 IEEE Silicon Nanoelectronics Workshop, Honolulu, Hawaii (2018/6/17-6/18)

38. Po-Hsiang Liao, Kang-Ping Peng, Horng-Chih Lin, Tom George, and Pei-Wen Li, 2018, “Single-fabrication-step Ge Nanosphere/SiO2/SiGe heterostructures: A key enabler for realizing Ge MOS devices” oral presentation in 2nd Electron Devices Technology and Manufacturing, Kobe, Japan (2018/3/14-3/16)

39. Ping-Che Liu, M. H. Kuo, H. C. Lin, and Pei-Wen Li, 2017, “Origin of very large photogain and high photorespone linearity for Ge-dot photoMOSFETs” IEDMS, Hsinchu, Sep. 6-8.

40. P. H. Liao, K. P. Peng, H. C. Lin, T. George, and P. W. Li, 2017, “Channel engineering of Ge-gate/SiO2/Si1-xGex-channel MOS structures fabricated by one-step oxidation process”, IEDMS, Hsinchu. Sep. 6-8.

41. T. L. Huang, C. Y. Hsueh, K. P. Peng, M. H. Kuo, H. C. Lin, and Pei-Wen Li, 2017, “Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices” IEDMS, Hsinchu, Sep. 6-8.

42. M. H. Kuo, B. J. Liu, T. L. Huang, H. C. Lin, and P. W. Li, 2017, "Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics,” 2017 Silicon Nanoelectronics Workshop, Kyoto, June 4-6.

43. C. Y. Hsueh, T. L. Huang, K. P. Peng, M. H. Kuo, H. C. Lin, and P. W. Li, "Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices" 2017 Silicon Nanoelectronics Workshop, Kyoto, June.

44. . P. W. Li (invited talk) 2017, “Back to the Future: Germanium reemerges as the savior of Si opto-electronics,” 13th CSWNST, Jiangsu, China (2017/04/2022).

45. Ming-Hao Kuo, M. C. Lee, J. W. Tien, Wei-Ting Lai, and Pei-Wen Li, “Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si Photonics”, presented in Optical Fiber Conference, Los Angel, USA (March 19-23 2017)

46. M. H. Kuo, Ming-Hao Kuo, Meng-Chun Lee, and Pei-Wen Li,, “High Photoresponsivity Germanium Nanodot PhotoMOSFETs for Monolithically-Integrated Si Optical Interconnects,” 1st Electron Devices Technology and Manufacturing, Toyama, Japan (2017/2/28-3/2)

47. C. W. Tien, P. H. Liao, K. P. Peng, H. C. Lin, and P. W. Li, “Channel engineering of self-organized Ge-nanosphere/SiO2/Si1-xGex-channel heterostructure on Si for Ge MOSFETs,” oral presentation in 2016 International Electron Device and Material Symposium, Tainan, Taiwan.(2016/11/1718)

48. M. H. Kuo, S. Y. Hung, P. C. Chen, W. T. Lai, M. C. Lee, and Pei-Wen Li, 2016 “Gate oxide thickness effect on germanium nanodot phototransistors for silicon-based optical interconnects”, oral presentation in 2016 International Electron Device and Material Symposium, Tainan, Taiwan.(2016/11/1718) Best Poster Award.

49. Po-Hsiang Liao, Shih-Cing Luo1, Kang-Ping Peng, Horng-Chih Lin, Tom George, and Pei-Wen Li, “Controllability of gate-stacking heterostructure of Ge gate/SiO2/SiGe channel fabricated by one-step high temperature oxidation process”, oral presentation in 2016 International Electron Device and Material Symposium, Tainan, Taiwan.(2016/11/1718) Best Poster Award.

50. Tom George, Pei-Wen Li, K. H. Chen, I. H. Chen, and W. T. Lai, (invited talk) “The Germanium Surprise! Unusual and Counter-Intuitive Ge/Si/O Interactions Result in Unique Nano-Optoelectronic Devices,” oral presentation in 2016 International Electron Device and Material Symposium, Tainan, Taiwan.(2016/11/1718).

51. P. H. Liao, C. W. Tien, K. P. Peng, H. C. Lin, Tom George, and P. W. Li,, 2016, “Gate-stack engineering of self-organized nanospherical Ge gate/SiO2/Si1-xGex channel on Si (100) and Si (110) for Ge MOS devices,” International Conference on Solid-State Devices and Materials, Sapporo, Japan (Sep. 25-30, 2016)

52. M. H. Kuo, S. K. Chou, W. T. Lai,Y. W. Pan, S. D. Lin, Tom George, and P. W. Li, 2016, “Experimental observation of direct bandgap photoluminescence from tensile-strained Ge nanodots embedded within SiO2 matrix,” International Conference on Solid-State Devices and Materials, Sapporo, Japan (Sep. 25-30, 2016)

53. Ming-Hung Wu, Horng-Chih Lin, Pei-Wen Li, Tiao-Yuan Huang, 2016, “Film-Profile-Engineered IGZO Thin-Film Transistors with Gate/Drain Offset for High Voltage Operation,” 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2016), Singapore, 18-21 July 2016

54. Horng-Chih Lin, Chin-I Kuan, Pei-Wen Li, and Tiao-Yuan Huang, “Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering,” 2016 Silicon Nanoelectronics Workshop, Honolulu, June 11-12.

55. Horng-Chih Lin, Chen-Chen Yang, Yung-Chen Chen, Ruey Dar Chang, Pei-Wen Li, and Tiao-Yuan Huang, “Fabrication and RTN Characteristics of Gate-All-Around Poly-Si Junctionless Nanowire Transistors,” 2016 Silicon Nanoelectronics Workshop, Honolulu, June 11-12.

56. M. H. Kuo, M. C. Lee, C. W. Tien, W. T. Lai, and P. W. Li, “Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si Photonics,” 2016 Silicon Nanoelectronics Workshop, Honolulu, June 11-12. 

57. P.W. Li (invited talk) 2016, “Designer Ge Quantum-Dot Phototransistors for highly-integrated, broadband optical interconnects,” IEEE INEC, Chengdu, China, May 911 2016.

58. P. W. Li (invited talk) 2016, “Germanium quantum dots for functional sensing devices,” CSWNST 2016, Taipei, Taiwan (2016/03/2324).

59. R. J. Lu, T. Y. Huang, P. W. Li, and H. C. Lin, 2016 "High-gain, Low-voltage BEOL Logic Gate Inverter Built with Film Profile Engineered IGZO Transistors", oral presentation in VLSI-TSA, Hsinchu, Taiwan, 25-287 April, 2016. 

60. C. C. Wang, C. S. Jhou, C. L. Hsin, W. T. Lai, and P. W. Li, 2015, “Effects of array size- and Ge-content on cooling efficiency of poly-Si1-xGex nanopillars thermoelectric coolers,” oral presentation in 2015 International Electron Device and Material Symposium, Tainan, Taiwan.(2015/11/1920).

61. M. H. Kuo, S. K. Chou, W. T. Lai, Y. W. Pan, S. D. Lin, and P. W. Li, 2015, “Direct Bandgap Photoluminescence from SiO2 Matrix Induced Tensile-strained Ge Quantum Dots,” oral presentation in 2015 International Electron Device and Material Symposium, Tainan, Taiwan. (2015/11/1920)

62. M. H. Kuo, S. Y. Hong, P. C. Chen, W. T. Lai, M. C. Lee, and P. W. Li, 2015, “Optimal Design and Fabrication of Germanium Dot Phototransistors for Optical Interconnects,” oral presentation in 2015 International Electron Device and Material Symposium, Tainan, Taiwan. (2015/11/1920)

63. Tom George, C. C. Wang, and P. W. Li, (Invited Talk) 2015, “Transition Metal Silicides: How to Expect the Unexpected!,” 2015 International Electron Device and Material Symposium, Tainan, Taiwan. (2015/11/1920)

64. Pei-Wen Li, (Invited Talk) 2015, “Innovative Ge quantum dot functional sensing/metrology devices,” Joint USAF-Korea NBIT-Taiwan Nanoscience Program Review, Seoul, Korea, Oct. 2015. 

65. Po-Hsiang Liao, Shih-Cing Luo, Kuo-Ching Yang, Tom George, W. T. Lai, and P. W. Li, “Gate-Stacking Engineering for Ge/SiO2/Si1-xGex  MOS  Devices,” 2015 International Electron Device and Material Symposium, Tainan, Taiwan. (2015/11/1920)

66. Ching-Chi Wang, Yi-Yeh Hsiao, Inn-Hao Chen, Wei-Ting La, Tom Georg, and Pei-Wen Li, “Geometry-dependent phase/stress and electrical resistivity in nickel-silicide nanowires,” International Conference on Solid-State Devices and Materials, Sapporo, Japan (Sep. 27-30, 2015).

67. Po-Hsiang Liao, Shih-Cing Luo, Kuo-Ching Yang, Tom George, W. T. Lai, and P. W. Li, “Gate-Stacking Engineering for Insta Ge/SiO2/SiGe Metal-Oxide-Semiconductor Devices,” International Conference on Solid-State Devices and Materials, Sapporo, Japan (Sep. 27-30, 2015).

68. Pei-Wen Li, (Invited Talk) 2015, “A novel CMOS approach to generate self-aligned SiO2/Ge/SiO2/SiGe gate-stacking heterostructures in a single fabrication step” in the 8th International Conference on Materials for Advanced Technologies (ICMAT), in Singapore, 28 June03 July, 2015.

69. Wei-Ting Lai, Kuo-Ching Yang, Po-Hsiang Liao, Thomas George, and Pei-Wen Li, “Gate-stack engineering for self-aligned Ge-gate/SiO2/SiGe-channel Insta-MOS devices”, Silicon Nanoelectronics Workshop, Kyoto, Japan (June 1415 2015)

70. Ming-Hao Kuo, Ho-Chane Chen, Wei-Ting Lai, and Pei-Wen Li, “Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique,” Silicon Nanoelectronics Workshop, Kyoto, Japan (June 1415 2015)

71. Ming-Hao Kuo, Chung-Yen Chien, Po-Hsiang Liao, Wei-Ting Lai, and Pei-Wen Li, 2015, “Size tunable Ge quantum dot phototrasnsistors for optical interconnects with high figure of merits”, in VLSI-TSA, Hsinchu, Taiwan, 27- 28 April, 2015.

72. P. W. Li and Wei-Ting Lai, 2015, “A novel approach to generate self-aligned SiO2/Ge/SiO2/Ge gate-stacking heterostructures in a single fabrication step”, Material Research Society Spring Meeting, San Francisco, USA, 6 - 10 April, 2015.

73. Shuo-Huang Yuan , Zing-Way Pei , Pei-Wen Li, Yi-Jen Chan, 2014,“High responsivity pentacene phototransistor achieved by surface plasmon enhancement,” MRS Fall Meeting, Boston, Massachusetts, USA (2014/11/30~12/5)

74. P. W. Li, (Invited Talk) 2014, “Designer germanium quantum dots for functional sensing/metrology devices,” EITA-New Materials, Tainan, Taiwan, Nov. 22-23 2014.

75. P. W. Li, (Invited Talk) 2014, “Designer Germanium Quantum-Dot for Nanoeletronics and Nanophotonics Devices,” International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014)

76. Ching-Chi Wang, Yi-Yeh Hsiao, Inn-Hao Chen, Tom George, and Pei-Wen Li, 2014, ”Geometry-dependent phases and electrical properties in nickel silicide nanowires ,” International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014)

77. Jyun-Yi Jhong , Pei-Wen Li, Tien-Chun Lee, Geng-Tai Ho, and Shih-Kuei Ma, 2014, ”Device scaling design of 700V super-junction MOSFETs for high figure of merits,” International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014)

78. Kuan-Hung Chen, Ching-Chi Wang, Tom George and Pei-Wen Li, 2014, “The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient,” International Electron Devices and Materials Symposium (IEDMS), Taiwan. (Nov19-21, 2014)

79. Ming-Hao Kuo, Wei-Ting Lai, Tzu-Min Hsu, and Pei-Wen Li, 2014, ”Designer Germanium Quantum Dot Phototransistor for Near Infrared Optical Detection and Amplification,” International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014) Best Poster Award.

80. P. H. Liao, T. C. Hsu1, K. H. Chen, T. H. Cheng, T. M. Hsu, and P. W. Li, 2014, ”Size Tunable Strain for Germanium Quantum Dots Embedded within SiO2 and Si3N4,” International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014)

81. Wei-Ting Lai, Kuo-Ching Yang, Ting-Chia Hsu, Po-Hsiang Liao, Thomas George, and Pei-Wen Li, 2014, ”A Self-aligned Ge/SiO2/Si0.5Ge0.5 gate-stacking heterostructure generated in a single-step fabrication,” International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014)

82. M. H. Kuo, W. T. Lai, H. T. Chang, S. W. Lee, and P. W. Li., 2014, “High-quality thin-film-like multifold Ge/Si/Ge composite quantum-dot hetero-structures for visible to near-infrared photodetection,” International Conference on Solid-State Devices and Materials, Tsukuba, Japan (Sep. 8-11, 2014).

83. W. T. Lai, K. C. Yang, T. C. Hsu, P. H. Liao, T. George, and P. W. Li, 2014, “A self-aligned Ge/SiO2/Si0.4Ge0.6 gate-stacking heterostructure generated in a single fabrication step,” International Conference on Solid-State Devices and Materials, Tsukuba, Japan (Sep. 8-11, 2014).

84. P. W. Li, (Invited Talk) 2014,”Designer Ge quantum dot single electron transistor and Coulomb blockade thermometry”, The 6th IEEE International Nanoelectronics Conference, IEEE INEC, 2014/7/28~7/31 Sapporo, Hokkaido, Japan. 

85. Wei-Ting Lai, Kuo-Ching Yang, Ting-Chia Hsu, Po-Hsiang Liao, Thomas George, and Pei-Wen Li, 2014 ”A Novel Approach to Generate Self-aligned Ge/SiO2/SiGe Gate-stacking Structures in a Single Fabrication Step,” Silicon Nanoelectronics Workshop, Hawaii, USA 2014/6/8~2014/6/9.

86. Ming-Hao Kuo, Wei-Ting Lai, Tzyy-Min Hsu, and Pei-Wen Li 2014, ”Designer Germanium Quantum Dot Phototransistor for Near Infrared Optical Detection and Amplification,” 2014 Silicon Nanoelectronics Workshop, Hawaii, USA 2014/6/8~2014/6/9.

87. Po-Hsiang Liao, Ting-Chia Hsu, Tzu-Hsuan Cheng, Tzu-Min Hsu, and Pei-Wen Li, 2014, ”Size Tunable Strain and Interfacial Engineering of Germanium Quantum Dots,” 2014 Silicon Nanoelectronics, Hawaii, USA 2014/6/8~2014/6/9.

88. Wei-Ting Lai, Kuo-Ching Yang, Ting-Chia Hsu, Po-Hsiang Liao, Thomas George, and Pei-Wen Li, ”A Novel Approach to Generate Self-aligned Ge/SiO2/SiGe Gate-stacking Structures in a Single Fabrication Step,” 2014 Silicon Nanoelectronics Workshop, Hawaii, USA 2014/6/8~2014/6/9.

89. P. W. Li, (Invited Talk) 2014,”Designer Ge quantum dot single electron transistor and Coulomb blockade thermometry”, The 6th IEEE International Nanoelectronics Conference, IEEE INEC 2014, 2014/7/28~7/31 Sapporo, Hokkaido, Japan. 

90. P. W. Li, (Invited talk), 2014, ”The Curious case of Germanium Quantum dots: Fantasy migration and Ripening behavior of Ge under Si interstitials oxidation,” IUMRS-ICEM, Taipei, June 11-June 14 (2014). 

91. H. Chen, C. C. Wang, and P. W. Li, 2014, “Designer Ge quantum dots Coulomb blockade thermometry,” oral presentation in 2014, VLSI-TSA, HsinChu, April 28 (2014).

92. H. Chen, and M. H. Kuo, and P. W. Li (Invited talk), 2013 “Designer Germanium Quantum-Dot Single Electron Transistors and Broadband Photodetectors,”IUMRA-ICA, Bangalore, India, Dec. 16–20 (2013).

93. C. C. Wang, K. H. Chen, C. Y. Chien, M. H. Kuo, Pei-Wen Li, and Tom George (Invited talk), “The Curious Case of Germanium Quantum Dots: Anomalous Migration and Growth Behavior of Ge under Si oxidation” 2013 IUMRA-ICA, Bangalore, India, Dec. 16–20 (2013).

94. Ching-Chi Wang, Jin-Yao chiou, Han-Sheng Tseng, Keng-Yu Lin, and Pei-Wen Li,“Alloy and dopant effects on thermal conductivities of Si1-xGex nanopillars ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

95. H. Chen, C. C. Wang, K. H. Chen, and P. W. Li,“Coulomb blockade thermometry using Germanium quantum-dot single-electron transistors ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

96. Kuan-Hung Chen, Chung-Yen Chien, and Pei-Wen Li,“Post-anneal Ambient and Interfacial Effects on Ge QD Agglomeration and Facet Formation ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

97. M.H. Kuo, C.C Wang, W.T.Lai, Tom George, and P.W Li,“Designer Ge QDs/Si MOS Transistors for Enhanced Near Infrared Photodetection ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

98. P. H. Liao, T. C. Hsu, K. C. Yang, C. C. Wang, and P. W. Li,“Designer Ge Channel on Si: A novel Ge/SiO2/Si Interfacial Engineering for MOS Configuration” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

99. Chung-Yen Chien, Yu-Jui Chang, and Pei-Wen Li,“Size Tunable Ge Quantum Dot Metal-Oxide-Semiconductor Photodiode with Low Dark Current and High Responsivity for Near Ultraviolet to Visible ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

100. P. H. Liao, T. C. Hsu, T. H. Cheng, T. M. Hsu, and P. W. Li,“Designer Strain Engineering of Germanium Quantum Dot ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

101. Y. H. Liu, C. C. Wang, K. C. Yang, K. M. Liu and P. W. Li,“Formation of Spherical Ge Quantum Dots in SiO2 and Si3N4 by the Presence of Local Source of Si ” 2013 IEDMS Nantou, Taiwan. (Nov 28-29, 2013)

102. Takeru Okada, Ching-Yuan Su, Chi-Hsien Huang, Kouki Igarashi, Akira Wada, Lain-Jong Li, Kuan-I Ho, Pei-Wen Li, Inn-Hao Chen, Chao-Sung Lai, and Seiji Samukawa, “Ultra-low Damage Fabrication of Graphene Nanoribbons by Neutral Beam Etching ” 2013 SSDM , 9/24~9/27 Fukuoka, Japan.

103. Inn-Hao Chen, Yi-Yeh Hsiao, Chin-Chi Wang, C. Lung Hsin, and Pei-Wen Li,“Size effects on phase formation and electrical robustness of nickel silicide nanowires”2013 SSDM , 9/24~9/27 Fukuoka, Japan.

104. Inn-Hao Chen, Ching-Chi Wang, Kuan-Hung Chen, and Pei-Wen Li,“Germanium quantum-dot single-electron Coulomb blockade thermometry” 2013 SSDM , 9/24~9/27 Fukuoka, Japan.

105. M.H. Kuo, C.C Wang, W.T. Lai, Tom George, and P.W Li,“Designer Ge QDs on Si for Enhanced Near Infrared Photodetection”2013 SSDM , 9/24~9/27 Fukuoka, Japan.

106. P. W. Li, (Invited talk) 2013,“Designer germanium quantum dots for novel nano-electronics, photonics, and thermoelectric devices” AOARD 2013/9/24 Tokyo, Japan

107. Ming-Hao Kuo, Po-Hsiang Liao, C. Y. Chien, and Pei-Wen Li (Invited talk),“Designer Ge quantum-dots transistors on Si for broadband photodetctions ”2013 AR-RASC Taipei ,Taiwan 2013/9/4

108. P. W. Li, (Invited talk) 2013,“Designer germanium quantum dots for novel nano-electronics, photonics, and energy saving devices”EITA-YIC 2013/8/1~8/2, MIT, USA

109. P. W. Li, (Invited talk) 2012, “Designer Ge quantum dots on Si-containing layers for Nanoelectronic and Nanophotonic Devices”, 2nd International conference on Small Science, Orlando, FL, USA (Dec. 16-19).

110. P. W. Li, (Invited talk) 2012, “CMOS-compatible precise placement of Ge quantum dots for nanoelectronic, nanophotonic, and energy conversion devices“, 222nd Rim Pacific ECS Meeting - Honolulu, Hawaii, (Oct. 7-12)

111. C. Y. Chien, Y. J. Chang, and P. W. Li, “Wavelength tunable Germanium quantum-dot visible photodetectors,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

112. M. H. Kuo, C. C Wang, W. T. Lai, Tom George, and P. W. Li, “Designer Ge QDs on Si for enhanced near infrared photodetection,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)- IEDMS, Best Poster Award

113. K. H. Chen, C. C. Wang, W. T. Lai, C. Y. Chien, Tom George and P. W. Li, “Evolution of germanium quantum dots migration in Si-bearing layer mediated by local oxidation,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

114. C. C. Wang, J. Y. Chiou, J. C. Hsu, M. T. Hung, and P. W Li, “Thermal and electrical properties of nano-scale Si1-xGex pillars,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

115. T. C. Hsu, K. H. Chen, C. Y. Chien, I. H. Chen, C. C. Wang, Tom George, and P. W. Li, “A novel Ge/Si and Ge/SiO2 interface engineering for metal-oxide-semiconductor configuration,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

116. H. Chen, K. H. Chen, and P. W. Li, “Hole tunneling spectroscopy of quantum states in Ge quantum dot,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

117. Y. Y. Hsiao, I. H. Chen, and P. W. Li, “Geometry and morphology effects on electrical resistivity and stability of NiSi nanowires,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

118. K.-H. Chen, I.-H. Chen, C.-Y. Chien, C.-C. Wang, T. George and P.-W. Li, “Evolution of Germanium quantum dots migration in Si bearing layer mediated by thermal oxidation”, 222nd Rim Pacific ECS Meeting - Honolulu, Hawaii, (Oct. 7-12)

119. H. Chen , K.H Chen, M.T. Kuo, and P.W. Li, 2012, “Placement of single Ge quantum dot along with self-aligned electrodes for effective single hole tunneling” 2012 International Conference on Solid-State Devices and Materials, Kyoto (Sep.25-27)

120. C.C. Wang , J.Y. Chiou, J.C. Hsu M.T Hung, H.T Chang and P.W. Li, 2012, “Quantum size effects on phonon transport in Ge quantum dot/SiO2 system,“ 2012 International Conference on Solid-State Devices and Materials, Kyoto Japan (Sep.25-27)

121. W.T. Lai, P.H. Liao, A. Homyk, A. Scherer and P.W. Li, 2012, ”SiGe quantum dots on Si pillars for visible photodetection” 2012 International Conference on Solid-State Devices and Materials, Kyoto Japan( Sep.25-27)

122. Shuo-Huang Yuan, Hsin-Cheng Lai, Bo-Jie Tzeng, Zing-Way Pei, Pei-Wen Li, and Yi-Jen Chan, 2012, “Well dispersed high concentration high-K nanoparticles in polymer for organic thin-film transistors,” International Conference on Flexible and Printed Electronics, Japan.

123. H. Chen, K. H. Chen, and P. W. Li, 2012, “Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling,” 2012 IEEE Si Nanoelectronics Workshop, Hawaii, USA (June 10-11)

124. C. C. Wang, K. H. Chen, I. H. Chen, W. Y. Chen, T. M. Hsu, and Pei-Wen Li, 2012, “Fabrication of thin-film-like three-dimensional Ge quantum dots pillar array for energy harvest/conversion applications“, Material Research Symposium Spring Meeting (April 9-13, San Francisco, USA)

125. C. Y. Chien, P. W. Li, K. H. Chen, W.T Lai, Tom George, 2011, “Nanoscale enhanced local oxidation of silicon-nitride layers by "burrowing" Ge quantum dots”, IEDMS, (Nov 17-18, Taipei, Taiwan)

126. K. H. Chen, P. W. Li,I. H. Chen, 2011, ”Enhanced gate modulation of Ge QD transistors with self-aligned electrodes”, IEDMS, (Nov 17-18, Taipei, Taiwan) - Best student paper

127. H. Chen, P. W. Li,K. H. Chen, 2011, ”Experimental study of the tunneling spectroscopy of Ge quantum dot single electron transistors with self-aligned electrodes”, IEDMS, (Nov 17-18, Taipei, Taiwan)

128. P. W. Li, (invited talk) 2011 “German quantum dot nano optoelectronics,” in the 11th Emerging Information and Technology Conference, Chicago, USA (July 28-29)

129. K. H. Chen and P. W. Li, 2011 “Enhanced gate modulation of Ge single electron transistors with self-aligned electrodes,” IEEE Si Nanoelectronics Workshop, Kyoto, Japan (June 11-12)

130. H. Chen, K. H. Chen, and P. W. Li, 2011, “Experimental resolving tunneling spectroscopy of Ge quantum dot using single electron transistors with self-aligned and profiled tunneling barriers,” IEEE Si Nanoelectronics Workshop, Kyoto, Japan (June 11-12)

131. Y. J. Chang, J. E. Chang, C. Y. Chien, J. C. Hsu, M. T. Hong, S. W. Lee and P. W. Li, 2011, “Formation of Ge quantum dots in silicon oxide and silicon nitride matrices and associated optical and thermal properties,” Material Research Symposium Spring Meeting (San Francisco, USA).

132. P. W. Li, (Invited talk) 2011, “Ge quantum dots nano electronics and photonics,” in IEEE International NanoElectronics Conference, Taoyuan, Taiwan (June). 

133. W. T. Lai and P. W. Li, 2011, “Carrier quantum transport in tri-gated Si nanowire transistors,” IEEE International NanoElectronics Conference, Taoyuan, Taiwan (June). 

134. C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, and P. W. Li, 2010, “Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique’,’ International Electron Device and Material Symposium, Jhong-li, Taoyuan, Taiwan. (Nov 18-19,2010)

135. H. Chen, K. H. Chen, H. H. Chou, and P. W. Li, “CMOS-compatible fabrication of room-temperature Ge QD single hole transistors’’ 2010 International Electron Device and Material Symposium, Jhong-li, Taoyuan, Taiwan. (Nov 18-19)

136. K. H. Chen, I. H. Chen, and P. W. Li, 2010, “Internal structure and electrical properties of Ge quantum dot in single-electron transistors,’’ International Electron Device and Material Symposium, Jhong-li, Taoyuan, Taiwan. (Nov 18-19)

137. C. C. Wang, K. H. Chen, C. Y. Chien, and P. W. Li , 2010, “Formation of thin-film-like Ge quantum dots array in thermally oxidizing SiGe pillar technique for energy harvest/conversion applications’’ International Electron Device and Material Symposium, Jhong-li, Taoyuan, Taiwan.(Nov 18-19)-Best student paper

138. P. H. Chen, P. Y. Lo, T. S. Hu, and Pei-Wen Li, 2010, “Bias-temperature-instability improvement and thermal property of alkyl-substituted oligothiophene organic thin-film transistors’’ International Conference on Flexible and Printed Electronics, HsinChu, Taiwan.(Oct 29-30)

139. C. C. Wang, K. H. Chen, C. Y. Chien, and P. W. Li, 2010, “Formation of thin-film-like Ge quantum dots array in thermally oxidizing SiGe pillar technique for energy harvest/conversion applications,” International Conference on Solid-State Devices and Materials, Tokoyo, Japan.

140. P. H. Chen, P. Y. Lo, T. Y. Hu, and P. W. Li, 2010, “Bias-temperature-instability and thermal anneal effects of organic thin-film transistors,” International Conference on Solid-State Devices and Materials, Tokoyo, Japan.

141. K. H. Chen, I. H. Chen, and P. W. Li, 2010, “Effective Ge single electron transistors with precise quantum dot placement,” IEEE Si Nanoelectronics Workshop, Hawaii, USA.

142. H. Chen, K. H. Chen, H. H. Chou, and P. W. Li, 2010, “CMOS-compatible fabrication of room-temperature Ge QD single hole transistors,” IEEE Si Nanoelectronics Workshop, Hawaii.

143. S. T. Liu, T. C. Liu, M. L. Chang, K. T. Chiang, S. P. Chiu, J. Lin, P. Y. Lo, P. W. Li, 2009, “Failure analysis for electronic devices on flexible substrate,” 4th International microsystems, packaging, assembly and circuits technology conference, p. 348-350.

144. S. T. Liu, T. C. Liu, M. L. Chang, K. T. Chiang, S. P. Chiu, J. Lin, P. Y. Lo, P. W. Li, 2009, “Non-destructive Failure Analysis in Organic Thin-film Transistors,” 35th International Symposium for Testing and Failure Analysis, San Jose, CA, USA, Nov. 15-19. ISTFA 2009, p. 144-148

145. H. Chen, S. S. Tseng, and P. W. Li, 2009, "Thermal stability of poly-Si phototransistors incorporating Ge quantum dots for near ultraviolet light detection and amplification," International Electron Device and Material Symposium, Taoyuan, Taiwan.

146. W. T. Lai, C. W. Wu, C. C. Lin, and P. W. Li, 2009, "Transport Characteristics in Tri-gate Si Nanowire MOSFETs," International Electron Device and Material Symposium, Taoyuan, Taiwan.

147. K. H. Chen, C. Y. Chien, W. T. Lai, S. W. Lee, and P. W. Li, 2009, "Positioning and numbering Ge quantum dots for effective single electron devices," International Electron Device and Material Symposium, Taoyuan, Taiwan. 

148. C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, and P. W. Li, 2009, “Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique, IEEE Nanotechnology Conference, Seoul, Korea, (Aug).

149. H. Chen, S. S. Tseng, and P. W. Li, 2009, “Thermal stability of poly-Si phototransistors incorporating Ge quantum dots for near ultraviolet applications,” International Conference on Solid-State Devices and Materials, Sendai, Japan.

150. K. H. Chen, C. Y. Chieh, W. T. Lai, and P. W. Li, 2009, “Positioning and numbering Ge quantum dots for effective quantum electrodynamic devices,” International Conference on Solid-State Devices and Materials, Sendai, Japan.

151. H. Chen, S. T. Sheng, and P. W. Li, 2009, “Thermal stability of germanium quantum dots phototransistors for near ultra-violet applications,” 10th IEEE Si Nanoelectronics Workshop, Kyoto, Japan.

152. W. T. Lai, C. W. Wu, and P. W. Li, 2009, “Temperature-dependent quantum transport characteristics in Si-nanowire MOSFETs,” IEEE Si Nanoelectronics Workshop, Kyoto, Japan.

153. K. H. Chen, C. Y. Chien, W. T. Lai, S. W. Lee, and P. W. Li, 2009, “Positioning and numbering Ge quantum dots for effective quantum tunneling devices,” IEEE Nanotechnology Conference, Geneva, Italy, July 12-14.

154. Wei-Ting Lai, C. C. Chen, David M. T. Kuo, and Pei-Wen Li, 2008, “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” International Conference on Solid-State Devices and Materials, Japan.

155. S. S. Tseng, I. H. Chen, and P. W. Li, 2008, “Photoresponses in poly-Si phototransistors incorporating Germanium quantum dots in the gate dielectrics,” IEEE Nanotechnology Conference, Texas, USA. IEEE-NANO, p 48-50, 2008 (EI)

156. W. T. Lai, G. H. Chen, David M. T. Kuo, and P. W. Li, 2008, “Multi-peak negative differential resistance arising from tunneling current through few Germanium quantum dots,” IEEE Si Nanoelectronics Workshop, Hawaii, USA.

157. S. H. Hsu, L. Y. Yang, and P. W. Li, 2008, “Low power enhanced charge retention of nanocrystal metal-oxide-semiconductor capacitors with multi-stack germanium quantum dots”, the 4th International Silicon Germanium Device and Technology Meeting, HsinChu, Taiwan.

158. S. H. Hsu, W. T. Lai, and P. W. Li, 2007, “Suppression of gate-induced tunneling barrier lowering on Germanium Quantum-dot Single-hole Transistors with Self-aligned Electrodes,” International Electron Device and Material Symposium, HsinChu, Taiwan.

159. S. Tseng and P. W. Li, 2007, “Photoresponse enhancement of metal-oxide-semiconductor photodetector with multi-stack germanium quantum dots embedded in oxide,” International Electron Device and Material Symposium, HsinChu, Taiwan.

160. G. L. Chen, W. T. Lai, and P. W. Li, 2007, “Large Coulomb-blockade oscillations on Germanium quantum-dot single-hole transistor,” International Electron Device and Material Symposium, HsinChu, Taiwan.

161. S. Tseng and P. W. Li, 2007, “Photoresponse enhancement of metal-oxide-semiconductor near ultraviolet photodetector with multi-stack germanium quantum dots embedded in oxide,” International Conference on Solid-State Devices and Materials, Japan. 

162. W. T. Lai and P. W. Li, 2007, “Transient behavior of Germanium quantum-dot resonant tunneling diode,” International Conference on Solid-State Devices and Materials, Japan.

163. S. H. Hsu, W. T. Lai, and P. W. Li, 2007, “High performance Germanium quantum-dot single-hole transistors with self-aligned electrodes,” International Conference on Solid-State Devices and Materials, Japan.

164. G. L. Chen, W. T. Lai, M. T. Kuo, and P. W. Li, 2007, “Room-temperature observation of large Coulomb-blockade oscillations from Germanium quantum-dot single-hole transistors with self-aligned electrodes,” IEEE Nanotechnology Conference, Hong Kong. 

165. S. Maikap, P. J. Tzeng, S. S. Tseng, T.-Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, P. W. Li, J.-R. Yang, M.-J. Tsai, 2007, “High-K HfO2/TiO2/HfO2 multilayer quantum well flash memory devices,” International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. (EI)

166. S. Tseng, W. T. Lai, and P. W. Li, 2006, “Optical and Electrical Characteristics of Ge Quantum Dots Formed by Selective Oxidation of Si0.85Ge0.15 and the Related Interdigited Photodiode”, 2006 International Electron Device and Material SymposiumBest Paper Award

167. S. Maikap, P. Tzeng, S. Tseng, C. Lin, H. Lee, C. Wang, L. Lee, T. Tien, S. Lo, P. W. Li, M. Tsai,  2006, “High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention,” 2006 International Electron Device and Material Symposium Best Paper Award

168. W. T. Lai and P. W. Li, 2006, “Fabrication of Ge quantum-dots by oxidation of Si1-xGex-on-insulator nanowires and its applications to resonant tunneling diodes and single-electron/-hole Transistors,” oral presentation in 2006 International Conference on Solid-State Devices and Materials, Yokohama, Japan.

169. S. Maikap, P. Tzeng, S. Tseng, C. Lin, H. Lee, C. Wang, L. Lee, T. Tien, S. Lo, P. W. Li, M. Tsai, “High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention,“ oral presentation in 2006 International Conference on Solid-State Devices and Materials, Yokohama, Japan.  

170. Y. C. Hsu, P. W. Li, and David M. T. Kuo, 2006, “Room temperature observation of current bistability and find structures in germanium quantum dits/SiO2 resonant tunneling diodes,” oral presnetation in European Material Research Symposium, Nice, France. 

171. R. H. Wu and P. W. Li, 2006, “Ge nanocrystal Metal-oxide-semiconductor capacitors formed by oxidation of poly-Si0.88Ge0.12”, oral presentation in the 3rd International Silicon Germanium Device and Technology Meeting, Princeton, USA. (EI)

172. W. T. Lai, P. W. Li, and David M. T. Kuo, 2006, “Room-temperature steady-state and transient carrier transport properties of Germanium single electron/hole transistors,” presentation in the 3rd International Silicon Germanium Device and Technology Meeting, Princeton, USA. 

173. S. S. Tseng, W. T. Lai, and P. W. Li, 2006, “Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si0.85Ge0.15/Si-on-insulator,” oral presentation in the 3rd International Silicon Germanium Device and Technology Meeting, Princeton, USA. 

174. C. H. Huang, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. C. Liao, Y. H. Su, P. W. Li, C. Y. Liu, C. S. Lai, J. H. Ting, C. S. Chu, and T. H. Lee, 2006, “Nanothick Layer Transfer of Huydrogen-implanted Wafer Using Polysilicon Sacrificial Layer,” presented in 2006 Material Research Symposium Spring Meeting, San Francisco, USA.

175. P. W. Li, 2006, “Physical Properties of Ge Quantum Dots and Room-Temperature Ge Single-electron/hole Transistors”, invited talk, Symposium on Nano Device Technology, Hsin, Taiwan.

176. P. W. Li, 2006, “Ge Quantum Dots Transistors,” invited talk, presented at the annual meeting of the Physics Society, Taiwan, Republic of China, January 18, 2006, Taipei, Taiwan.

177. W. T. Lai, W. M. Laio, P. W. Li and M. T. Kuo, 2005, “Effects of Parasitic MOSFETs and Traps on Charge Transport Properties of Germanium Quantum Dot Single Electron/Hole Transistors,” oral presentation in 2005 IEEE International Conference on Electronic Devices and Solid-State Circuits, HongKong. 

178. W. M. Liao, W. T. Lai, P. W. Li, M. T. Kuo, P. S. Chen, and M. –J. Tsai, 2005, “Strong Quantum Confinement and Coulomb Blockade Effects in Ge Quantum Dots/SiO2 system,” Proceeding of 5th IEEE Nanotechnology Conference, Nagoya, Japan.

179. W. M. Liao, C. F. Shih, and P. W. Li, 2005, “Thermal Sensitivity of SiGe Dynamic Threshold pMOSFETs,” 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. 

180. W. T. Lai, W. M. Liao, M. T. Kuo, and P. W. Li, 2005, “Quantum Confinement Effects on the Electronic Structure of Ge Quantum-Dots Formed by Selective Oxidation of SiGe-on-Insulator,” present in the International Conference on Silicon Epitaxy and Heterostructures, Hyogo, Japan. 

181. M. T. Kuo and P. W. Li, 2005, “Single Electron Transistor at High Temperature,” presented in the 2005 American Physics Spring Meeting, Los Angeles, USA.

182. P. W. Li, W. M. Liao, M. T. Kuo, and W. T. Lai, 2005, “Optical and Electronics Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator,” presented in 2005 American Physics Society Spring Meeting, Los Angeles, USA.

183. P. W. Li W. M. Liao, W. T. Lai, M. T. Kuo and M. –J. Tsai, 2005, “Germanium Quantum-Dots Formed by Selective Oxidation of SiGe and Room-Temperature Ge Single-Electron Transistors,” presented in 2005 US Air Force/Taiwan Nanoscience Initiative Workshop, Hawaii, USA.

184. S. S. Tseng, P. W. Li, W. M. Liao, and W. T. Lai, “Photoluminesence of Ge nanocrystals formed by oxidation of polycrystalline-Si0.8Ge0.2”, presented in 2005 Electron Devices and Materials Symposia, Kaoshiung, Taiwan.

185. W. T. Lai, P. W. Li, W. M. Liao, and S. S. Tseng, “Growth mechanism of Ge Quantum Dots Formed by Selective Oxidation of Si1-xGex-on insulator,” presented in 2005 Electron Devices and Materials Symposia, Kaoshiung, Taiwan.

186. W. M. Liao, C. F. Shih, W. T. Lai, and P. W. Li, “Study of SiGe Dynamic Threshold pMOSFET at Various Temperature,” presented in 2004 International Electron Devices and Materials Symposia, HsinChu, Taiwan.

187. W. M. Liao, P. W. Li, M. T. Kuo, P. S. Chen, and M. –J. Tsai, “Electrical and Optical properties of Ge Quantum-dots Formed by Selective Oxidation of SiGe-on-Insulator and Room-Temperature Ge Single-Electron Transistors,” presented in the 2nd International SiGe Technology and Device Meeting, Frankfurd, Germany, 2004. 

188. P. W. Li, W. M. Liao, P. S. Chen, S. C. Lu, and M. –J. Tsai, “Fabrication and Characterization of Ge Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator,” presented in 2004 Material Research Symposium Spring Meeting.

189. W. M. Liao, P. W. Li, M. T. Kuo, P. S. Chen, and M. -J. Tsai, “Electrical and Optical Properties of Ge Quantum-Dots Formed by Selective Oxidation of SiGe-on-Insulator and Room-Temperature Ge Single-Electron Transistors”, presented in Symposium on Nano Device Technology 2004.

190. W. M. Liao, P. W. Li, S. W. Lin and W. C. Tsai, “Fabrication of atomic-scale germanium quantum-dot single-electron transistor,” presented in 2003 Electronics Device and Material Symposium, Keelung, Taiwan.

191. C. P. Tseng, P. W. Li, and W. M. Liao, “SiGe pMOSFETs for Micropower Applications,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan. 

192. S. S. Tzeng, P. W. Li, and W. M. Liao, “Study of NiSi and Ni(Si0.8Ge0.2) formed at low silicidation temperature,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan. 

193. S. W. Lin, W. M. Liao, and P. W. Li, “Formation of nano-scale of Ge Quantum Dots by Selective Oxidation of SiGe on SOI,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan. 

194. W. C. Tsai, C. C. Shih, and P. W. Li, “Study of Strained SiGe-channel n- and p-MOSFETs,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan.

195. P. W. Li, W. M. Liao, S. W. Li, P. S. Chen, S. C. Lu, and M. –J. Tsai, “Formation of Ge Quantum Dots by Selective Oxidation of SiGe Alloys for Single-Electron Devices,” presented in 2003 International Conference on Solid State Devices and Materials, Tokyo, Japan

196. P. W. Li, W. M., Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, and M. –J. Tsai, 2003, “High Performance Si/SiGe Heterostructure MOSFETs for Low power and Low Noise RF/Microwave Circuit Applications,” presented in the 1st International SiGe Technology and Device Meeting, Nagoya, Japan, 2003. 

197. Fu-Li Hsiao, Chii-Chang Chen, Pei-Wen Li, and Jenq-Yang Chang, 2003, “Novel Structure of Variable Optical Attenuator on SOI,” 2003 OPT. 

198. P. W. Li, W. M. Liao, and C. C. Shih, 2002, “SiGe Heterostructure MOSFETs for Micropower Circuits Applications”, presented in 2002 International Electron Devices and Materials Symposia, Taipei. 

199. Y. M. Hsin, H. T. Hsu, K. P. Hseuh, W. B. Tang, P. W. Li, and N. Y. Li, 2002, “Effects of annealing on the performance of InGaP/InGaAsN/GaAs HBTs,” presented in 2002 International Electron Devices and Materials Symposia, Taipei.

200. Y. C. Chen, C. C. Chen, C. C. Shih, P. W. Li, and J. Y. Chang, “Design and Fabrication of SOI-based AWG,” presented in OPT 2002.

201. C. C. Shih, P. W.Li, C. C. Chen, and J. Y. Chang, 2002, “Vertical Si Rib Structure Formed by SF6/C4F8–based Plasma for SOI Optical Waveguide Applications”, presented in 2002 International Electron Devices and Materials Symposia, Taipei.

202. P. W. Li, and W. M. Liao, 2002, “Low-frequency noise analysis of Si/SiGe pMOSFETs for RF circuits”, presented in 2002 International Conference on Solid State Devices and Materials, Nagoya, Japan. 

203. Y. S. Huang, C. J. Lin, N. Y. Li and P. W. Li, 2002, “Photoreflectance and surface photovoltage spectroscopy characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure”, 2002 Diluted Nitride Workshop, Istanbul, Turkey, Sep. 2002.

204. P. W. Li and W. M. Liao, 2001, “Design of High Speed Si/SiGe Heterojunction Complementary MOSFETs with Reduced Short-Channel Effects,” presented in Tenth Canadian Semiconductor Technology Conference, Ottawa, Canada, Aug. 14-17. 

205. W. M. Liao and P. W. Li, 2001, “High performance pMOSFETs with Reduced Short Channel Effects using SiGe Source/Drain Heterojunction”, presented in 2001 Electronic Device & Material Symposium. 

206. P. W. Li, H. L. Chen, and S. B. Su, 2001, “SiGe pMOS Devices with Gate Dielectrics Formed by LPCVD TEOS Oxide”, presented in Symposium on Nano Device Technology 2001.

207. J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, P. W. Li, and F. H. Pollak, 2001, “Angle dependent surface photovoltage spectroscopy study of GaAs/GaAlAs vertical cavity surface emitting laser structures,” 43rd 2001 Electronic Materials Conference, University of Notre Dame, Notre Dame, Indiana, USA

208. P. W. Li, H. R. Chen, and W. M. Liao, 2000, “Analytical Modeling of Si/SiGe Complementary MOS Transistors”, in the Proceeding of 2000 Electronic Device & Material Symposium.

209. P. W. Li, H. C. Guang, and N. Y. Li, 2000 “Characterization of the Optical Properties of InxGa1-xAs1-yNy by Variable Angle Spectroscopic Ellipsometry”, in the Proceeding of 2000 Electronic Device & Material Symposium.

210. P. W. Li, N. Y. Li, and H. C. Guang, 1999, “Characterization of the Index of Refraction of GaAs1-xNx by Ellipsometry,” in the Proceeding of 1999 Electronic Device & Material Symposium, p.289-292  

211. N. Li, C. P. Hains, K. Yang, J. Cheng, P. W. Li, M. Moorthy, X. Weng, R. S. Goldman, 1999, “OMVPE Growth and Characteristics of Almost 1.2 m GaInNAs-GaAs Three-Quantum-Well Laser Diode”, presented in the 9th International OMVPE Conference.

212. P. W. Li, 1998, Characterization and Simulation of the Physical Properties of Si1-xGex Oxide, presented in 1998 International conference on Next decades of High Technologies. 

213. S. W. Chan, L. Zhao, P. W. Li, and E. S. Yang, 1995, High Performance Oxide on SiGe and Their Interface, in the Proceeding of the 9th International Confernece on Microscopy of Semiconductor Materials, 20-23

214. P. W. Li, E. S. Yang, Y. F. Yang, and X. Li, 1994, Eletron Cyclotron Resonance Microwave Plasma Enhanced SiGe Oxidation and MOS Transistors, presented in the 21st International Symposium on Compound Semiconductor, 

215. P. W. Li, Z. Lu, U. Gennser, E. S. Yang and R. M. Osgood, Jr., 1991, "Oxidation of SiGe by Electron Cyclotron Resonance Plasma," presented in Material Research Society 1991 Fall meeting. 

C. 專書及專書論文

“射頻及高速元件”，王永和、辛欲明、李佩雯、詹益仁、陳武男等合著，2007。

“電子材料” ，李佩雯修校/周玉 主審/賈德昌 等編著,滄海書局, 2002。

3.“半導體製程” ，姜廷隆譯,李佩雯校稿,滄海書局, 2001。

D. 技術報告及其他

1. 李佩雯與郭明庭, “半導體與量子物理”，科學發展月刊，中華民國九十九年七月。

2. P. W. Li and M. T. Kuo, “量子資訊之關鍵元件  量子點與單電子電晶體”, 電子月刊, 中華民國九十三年十一月。

3. 工程科技通訊,”矽/矽鍺異質結構互補型金氧半電晶體之研製”,第六十七期九十一頁,中華民國九十二年四月。

4. 李佩雯,廖瑛瑞,程蒙召, 1996, 0.35m 16/64M DRAM Proecss Q1.0 Manual, 世界先進積體電路股份有限公司技術報告。