Publications

Since joining NITSRI

Journal Articles:

[21]. I. H. Wani and S. A. Ahsan, “Physics-based SPICE Models of p-GaN n-channel and p-channel FETs towards GaN Complementary Circuit Simulation and Insights", IEEE Trans. Electron Devices, vol. 72, no. 12, pp. 6537-6545, Dec. 2025.

[20]. T. Nazeer, and S. A. Ahsan, “Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-based SPICE Model", IEEE Electron Device Lett., vol. 46, no. 12, pp. 2369-2372, Dec. 2025.

[19]. M. H. Ansari, A. Lahgere, S. A. Ahsan, and Y. S. Chauhan, “Physics Based SPICE Model of Slant Field Plate GaN HEMTs", IEEE Trans. Electron Devices, vol. 72, no. 9, pp. 4780-4787, Sep. 2025.

[18]. Z. Bhat, and S. A. Ahsan, “A Physics–based Analytic Model for p–GaN HEMTs", IEEE Trans. Electron Devices, vol. 71, no. 11, pp. 6544-6551, Nov. 2024.

[17]. M. S. Nazir, A. Naseer, S. A. Ahsan, and Y. S. Chauhan, “A Unified Charge-based SPICE-Compatible Flicker Noise Model for 2D-Material FETs”, IEEE Trans. Electron Devices, vol. 71, no. 10, pp. 6452-6455, Oct. 2024.

[16]. T. Nazeer, and S. A. Ahsan, “Analyzing Few-layer and Heterostructure pH-Sensitive 2D-material FETs using a Physics-Based SPICE Compact Model”, ACS Appl. Electron. Mater., vol. 6, no. 7, pp. 5085–5093, Jul. 2024.

[15]. Z. Bhat, and S. A. Ahsan, “A Comprehensive Model for Gate Current in E-mode p-GaN HEMTs”, IEEE Trans. Electron Devices, vol. 71, no. 3, pp. 1812-1819, Mar. 2024.

[14]. Z. Bhat, and S. A. Ahsan, “Analyzing E-mode p-channel GaN H-FETs using an Analytic Physics-based Compact Model”, IEEE Trans. Electron Devices, vol. 71, no. 3, pp. 1687-1693, Mar. 2024.

[13]. M. S. Nazir, A. Pampori, R. Dangi, S. A. Ahsan, and Y. S. Chauhan, “Charge-based Flicker Noise Modeling of GaN HEMTs down to Cryogenic Temperatures”, IEEE Electron Device Lett., vol. 44, no. 9, pp. 1416-1419, Sep. 2023

[12]. M. S. Nazir, P. Kushwaha, A. Pampori, S. A. Ahsan, and Y. S. Chauhan, “Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures”, IEEE Trans. Electron Devices, vol. 69, no. 11, pp. 6016-6022, 2022.

[11]. A. Pampori, S. A. Ahsan, and Y. S. Chauhan, “Modeling the Impact of Dynamic Fin-width on the I–V, C–V and RF Characteristics of GaN Fin–HEMTs using Industry Standard Models”, IEEE Trans. Electron Devices, vol. 69, no. 5, pp. 2275-2281, 2022.

[10]. R. R. Malik, M. A. Mir, Z. Bhat, A. Pampori, Y. S. Chauhan, and S. A. Ahsan, “Modeling and Analysis of Double Channel GaN HEMTs using a Physics-based Analytical Model”, IEEE J. Electron Devices Soc., vol. 9, no. 5, pp. 789-797, 2021.

[9]. A. Pampori, S. A. Ahsan, R. Dangi, U. Goyal, S. K. Tomar, M. Mishra, and Y. S. Chauhan, “Modeling of Bias Dependent Effective Velocity and its Impact on Saturation Transconductance in AlGaN/GaN HEMTs" IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3302-3307, 2021.

[8]. S. A. Ahsan, S. K. Singh, M. A. Mir, M. Perucchini, D. Polyushkin, T. Mueller, G. Fiori, and E. G. Marin, “A SPICE Compact Model for Ambipolar 2D-Material FETs aiming at Circuit Design" IEEE Trans. Electron Devices, vol. 68, no. 6, pp. 3096-3103, 2021.

[7]. S. A. Ahsan, S. K. Singh, C. Yadav, E. G. Marin, A. Kloes, and M. Schwarz, “A Comprehensive Physics-based Current-Voltage SPICE Compact Model for 2D-Material-based Top-contact Bottom-gated Schottky-Barrier FETs" IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 5188-5195, 2020.

[6]. S. Khandelwal, Y. S. Chauhan, T. Fjeldly, S. Ghosh, A. Pampori, D. Mahajan, R. Danghi, and S. A. Ahsan, "ASM GaN: Industry Standard Model for GaN RF and Power Devices - Part - I: DC, CV, and RF Model", IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 80-86, 2019.

Books:

[1]. Y. S. Chauhan, A. Pampori, and S. A. Ahsan, "GaN Transistor Modeling for RF and Power Electronics: Using the ASM-HEMT Model", Woodhead Publishing, Elsevier, Jun. 2024.

Conference Proceedings:

[21]. T. Nazeer and S. A. Ahsan, “Physics-based SPICE Model of 2D-Material FETs for Neuromorphic Circuit Simulation”, Proc. Int. Compact Modeling Conf. (ICMC), San Francisco, United States, Jun. 2025.

[20]. S. A. Ahsan, I. H. Wani, Z. Gulzar, Z. Bhat, M. Noor, and B. S. Sengar, “Introducing the NITSRI-GaN Modeling Framework for Power GaN Technology”, Proc. Int. Compact Modeling Conf. (ICMC), San Francisco, United States, Jun. 2025.

[19]. I. H. Wani, Z. Gulzar, M. Noor, Z. Bhat, and S. A. Ahsan, “Multi-Temperature RF GaN HEMT Model Using the ASM Industry Standard”, Proc. IEEE Microw., Antennas, Propag. Conf. (MAPCON), Hyderabad, India, 2024.

[18]. T. Nazeer, and S. A. Ahsan, “NITSRI-2D: A surface potential based model for 2D material based pH sensitive FETs”, Proc. IEEE European Solid State Device Research Conf. (ESSDERC), Lisbon, Portugal, pp. 53-56, Sep. 2023.

[17]. Z. Bhat, and S. A. Ahsan, “Physics-based Analytical Modeling of p-GaN/AlGaN/GaN HEMTs”, IEEE India Council International Conf. (INDICON), Cochi, Kerala, India, Nov. 2022.

[16]. Y. H. Zarkob, S. A. Bhat, and S. A. Ahsan, “Analytical Surface Potential Calculation for Organic Thin-film Transistors”, IEEE Int. Semiconductor Conf. (CAS), Romania, Jun. 2021.

[15]. S. A. Ahsan, A. Pampori, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Impact of Via-Inductance on Stability Behavior of Large Gate-Periphery Multi-finger RF Transistors", IEEE Conf. Modeling Systems Circ. Devices (MOS-AK India), Hyderabad, India, Feb. 2019.

Till PhD / Postdoc

Journal Articles:

[5]. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic Applications", IEEE Trans. Electron Devices, vol. 64, no. 3, pp. 816-823, 2017.

[4]. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Pole-Zero Approach to Analyze and Model the Kink in Gain-Frequency Plot of GaN HEMTs", IEEE Microw. Wireless Compon. Lett., vol. 27, no. 3, pp. 266-268, 2017.

[3]. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics-based Multi-bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow", IEEE J. Electron Devices Society, vol. 5, no. 5, pp. 310-319, 2017.

[2]. S. A. Ahsan, A. Pampori, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "A New Small-signal Parameter Extraction Technique for large gate-periphery GaN HEMTs", IEEE Microw. Wireless Compon. Lett., vol. 27, no. 10, pp. 918-920, 2017.

[1]. S. A. Ahsan, S. Ghosh, K. Sharma, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior", IEEE Trans. Electron Devices, vol. 63, no. 2, pp. 565-572, 2016.

Conference Proceedings:

[14]. S. Khandelwal, S. Ghosh, S. A. Ahsan, and Y. S. Chauhan, "Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness", Asia Pacific Microw. Conf. (APMC), Kuala Lumpur, Malaysia, Nov. 2018.

[13]. S. Ghosh, S. A. Ahsan, S. Khandelwal, A. Pampori, R. Dangi and Y. S. Chauhan, "ASM-HEMT: A Robust Physics-Based GaN HEMT Model for Power and RF Applications", Workshop on Compact Modeling (WCM), Anaheim, CA, USA, May 2018.

[12]. A. Pampori, S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications", Electron Devices Technol. Manuf. Conf. (EDTM), Japan, Mar. 2018.

[11]. S. Ghosh, S. A. Ahsan, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "GaN HEMT Modeling for Power and RF Applications using ASM-HEMT", IEEE Int. Conf. Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.

[10]. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Statistical Simulation for GaN HEMT Large Signal RF performance using a Physics-based Model", IEEE Int. Conf. Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.

[9]. A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, N. Defrance, and Y. S. Chauhan, "Modeling DC, RF and Noise behavior of GaN HEMTs using ASM-HEMT Compact Model", IEEE Int. Microw. RF Conf. (IMaRC), Delhi, India, Dec. 2016.

[8]. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Modeling of Kink-Effect in RF Behaviour of GaN HEMTs using ASM-HEMT Model", IEEE Int. Conf. Electron Devices Solid-State Circ. (EDSSC), Hong Kong, Aug. 2016.

[7]. S. Ghosh, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Modeling of Source/Drain Access Resistances and their Temperature Dependence for GaN HEMT in a Physics-based Framework", IEEE Int. Conf. Electron Devices Solid-State Circ. (EDSSC), Hong Kong, Aug. 2016.

[6]. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics based large signal modeling for RF performance of GaN HEMTs", Int. Workshop Phys. Semicond. Devices (IWPSD), Bangalore, Dec. 2015.

[5]. S. Ghosh, S. Agnihotri, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Analysis and Modeling of Trapping Effects in RF GaN HEMTs under Pulsed Conditions", Int. Workshop Phys. Semicond. Devices (IWPSD), Bangalore, Dec. 2015.

[4]. K. Sharma, S. Ghosh, A. Dasgupta, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Capacitance Analysis of Field Plated GaN HEMT", Int. Workshop Phys. Semicond. Devices (IWPSD), Bangalore, Dec. 2015.

[3]. S. Agnihotri, S. Ghosh, A. Dasgupta, S. A. Ahsan, S. Khandewal, and Y. S. Chauhan, "Modeling of Trapping Effects in GaN HEMTs", IEEE India Conf. (INDICON), New Delhi, India, Dec. 2015.

[2]. S. A. Ahsan, S. Ghosh, K. Sharma, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling of a GaN HEMT with Gate and Source Field Plates", IEEE Int. Symp. Compound Semicond. (ISCS), Santa Barbara, Jun. 2015.

[1]. K. Sharma, A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Effect of Access Region and Field Plate on Capacitance behavior of GaN HEMT", IEEE Int. Conf. Electron Devices Solid-State Circ. (EDSSC), Singapore, Jun. 2015.

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