News & Announcements

Announcements

For potential GaN industrial partners: We welcome collaborations with the power and RF GaN foundries as well as application developers to advance their device designs through our state-of-the-art physics-based SPICE models that you can use for device-to-circuit co-optimization. We can also support your device designs through our simulation suites and modeling frameworks.

For potential students: Motivated students interested in joining our group to work on contemporary Masters / Doctoral research problems on GaN technology development (for RF and Power Electronics) are encouraged to get in touch with us through email. We are also looking for research interns on the above topics. Join us in our journey towards strengthening the GaN ecosystem in India!

News

15 Oct, 2025: Aamir is selected as a working group member of the Horizon Europe project INPACE for Cluster 4: Enabling Technologies - Chips for the future, for thematic working groups: Advanced functionalities and Ground-breaking technologies.
22 Sep, 2025: Paper by Tamanna and Aamir titled "Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-based SPICE Model", accepted in the IEEE Electron Device Letters.
08 Sep, 2025: Inayat has proceeded on his research internship at MIET Moscow.
30 Aug, 2025: Aamir participated in the DevSET workshop at IIT Bombay to deliberate on the national roadmap for the Power Semiconductor R&D in India.
17 Jul, 2025: Received the ANRF PAIR Grant (Category B) for an overall budget of Rs. 2.3 Crores allocated for the entire PAIR network - Anusandhan National Reserach Foundation (ANRF).
21 May, 2025: Paper by Hasnain et al. titled "Physics Based SPICE Model of Slant Field Plate GaN HEMTs", published in the IEEE Trans. Electron Devices.
21 Mar, 2025: Paper by Inayat et al. titled "Multi-Temperature RF GaN HEMT Model Using the ASM Industry Standard", published in the IEEE Microw., Antennas, Propag. Conf. (MAPCON), at Hyderabad, India.
10 Mar, 2025: Paper by Tamanna and Aamir titled "Physics-based SPICE Model of 2D-Material FETs for Neuromorphic Circuit Simulation", accepted for oral presentation at the International Compact Modeling Conference (ICMC) to be held at San Francisco, United States.
10 Mar, 2025: Paper by Aamir et al. titled "Introducing the NITSRI-GaN Modeling Framework for Power GaN Technology", accepted for oral presentation at the International Compact Modeling Conference (ICMC) to be held at San Francisco, United States.
09 Dec, 2025: Aamir has been nominated as a member of the Technical Program Committee for the inaugural edition of the International Compact Modeling Conference (ICMC) to be held in June 2025 at San Francisco, United States.
17 Sep, 2024: Aamir delivered the invited talk at the Wide bandgap Technologies workshop at IIT Roorkee.
26 Aug, 2024: Paper by Zarak and Aamir titled "A Physics–based Analytic Model for p–GaN HEMTs", published in the IEEE Trans. Electron Devices, 10.1109/TED.2024.3453785.
20 Aug, 2024: Aamir has been nominated as a member of the IEEE EDS Conference Engagement Committee.
16 Aug, 2024: Paper by Sajid et al. titled "A Unified Charge-based SPICE-Compatible Flicker Noise Model for 2D-Material FETs", accepted in the IEEE Trans. Electron Devices, DOI: 10.1109/TED.2024.3446766.
8 Jul, 2024: Paper by Tamanna and Aamir titled “Analyzing Few-layer and Heterostructure pH-Sensitive 2D-material FETs using a Physics-Based SPICE Compact Model”, published in ACS Applied Electronic Materials.
06 Jul, 2024: Aamir has been elevated as a Senior Member of the IEEE.
31 May, 2024: Our long-awaited book on our industry standard GaN model is finally out, published by Elsevier.
14 May, 2024: Aamir represented India and delivered an invited talk at the International Cooperation on Semiconductors (ICoS) Workshop, at Athens, Greece, organized under the framework of the INdo-PACific-European-Union (INPACE) project, funded by the flagship Horizon Europe program.
21 Mar, 2024: Our completed SERB project SRG/2019/001122 just got graded "Excellent" by the expert review committee. Kudos to the team and thanks to the Ministry of Science and Technology, Government of India for their generous support.
13 Mar, 2024: On the historical occasion of the inauguration of the three semiconductor fabs by the Prime Minister of India, Aamir delivered the institute seminar on "Semiconductor Era in India: Opportunities, Challenges and our Potential Contribution" at NITSRI.
05 Mar, 2024: Aamir delivered an invited talk titled "Advancements in GaN Modeling for Power and RF Applications: Insights from the ASM Model and Beyond" at this year's IEEE Electron Devices Technology and Manufacturing Conference (EDTM) held at Hilton Bangalore.
01 Feb, 2024: Paper by Zarak and Aamir titled "A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs", published in the IEEE Trans. Electron Devices.
22 Jan, 2024: Aamir has been selected as a member of the IEEE EDS Compact Modeling Technical Committee.
03 Jan, 2024: Paper by Zarak and Aamir titled "Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model", published in the IEEE Trans. Electron Devices.
11 Sep, 2023: Paper by Tamanna and Aamir titled "NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D Materials", published at the IEEE European Solid-State Device Research Conference (ESSDERC) at Lisbon, Portugal. This was the only paper from an Indian institute presented at ESSDERC 2023.
12 Jul, 2023: Paper by Sajid et al. titled "Charge-based Flicker Noise Modeling of GaN HEMTs down to Cryogenic Temperatures", published in the IEEE Electron Device Letters.
24 Nov, 2022: Paper by Zarak and Aamir on "Physics-based Analytical Modeling of p-GaN/AlGaN/GaN HEMTs", published at the IEEE India Council International Conference (INDICON) at Kochi, Kerala.
20 Sep, 2022: Paper by Sajid et al. titled "Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures", published in the IEEE Trans. Electron Devices.
18 Mar, 2022: Paper by Ahtisham et al. titled "Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs", published in the IEEE Trans. Electron Devices.
06 Oct, 2021: Paper by Yawar et al. titled "Analytical Surface Potential Calculation for Organic Thin-film Transistors" presented (online) at the IEEE International Semiconductor Conference (CAS) at Romania.
27 Aug, 2021 Paper by Rasik et al. titled "Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model", publisehd in IEEE J. Electron Devices Society.
06 May, 2021: Paper by Ahtisham et al. titled "Modeling of Bias Dependent Effective Velocity and its Impact on Saturation Transconductance in AlGaN/GaN HEMTs", published in the IEEE Trans. Electron Devices. Acknowledgements to our collaborators from IIT Kanpur and DRDO.
02 Apr, 2021: Paper by Aamir et al. titled "A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design, published in the IEEE Trans. Electron Devices. Acknowledgements to our collaborators from Vienna University of Technology, Università di Pisa and Universidad de Grenada.
05 Dec, 2020: Aamir has been listed among the Golden Reviewers for IEEE Transactions on Electron Devices.
30 Nov, 2020: Aamir has been appointed as the Nodal officer from NITSRI for the formulation of the J&K Research Consortium.
30 Oct, 2020: Aamir will serve as a member of the Technical Program Committee for the inaugural IEEE International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, to be hosted by NIT Silchar.
26 Oct, 2020: Installed Keysight's Advanced Design System and Device Modeling Software (earlier known as IC-Cap) purchased under our SERB Early Career Research Award.
28 Aug, 2020: Paper by Aamir et al. titled "A comprehensive physics-based current–voltage SPICE compact model for 2-D-material-based top-contact bottom-gated Schottky-barrier FETs", published in the IEEE Trans. Electron Devices. Acknowledgements to our collaborators from University of Granada, Robert Bosch and TH Mittelhessen.
19 Aug, 2020: Shivendra defended his Masters thesis and joined IIT Kanpur as a Grad student.
08 Feb, 2020: Mehak Ashraf Mir joined the group as a Research Associate under the DST-SERB Startup Research Grant scheme. Welcome, Mehak!
21 Dec, 2019: Asif Altaf Shah, Aadil Bashir Dar and Mohammad Ateeb Munsi join the group as Masters students. Welcome all!
20 Dec, 2019: Rasik Rashid Malik, Zarak Bhat and Tamanna Nazeer join the group as Grad students. Welcome all!
24 Oct, 2019: Received the DST-SERB Early Career Research Award, with the fellowship (Startup Research Grant).
22 Jul, 2019: Group organized a TEQIP sponsored Short course on "Hands-on Training on EDA Tools". Keynotes by Shri H. S. Jattana from Semiconductor Labs Mohali, Mr. Ahtisham Pampori from IIT Kanpur.
15 Jul, 2019: Group organized a TEQIP sponsored Short course on "Emerging Electron Devices for Integrated Circuit Applications". Keynotes by Prof. B. Mazhari, Prof. A. Dutta and Prof. Y. S. Chauhan from IIT Kanpur; Prof. S. Lodha from IIT Bombay, and Prof. A. Dixit from IIT Delhi.
26 Apr, 2019: Non Disclosure Agreement (NDA) signed between NITSRI and a French Semiconductor Device Modeling Company - AMCAD Engineering, for GaN Model Development and Integration.
4 Dec, 2018: Aamir has been listed among the Golden Reviewers for IEEE Transactions on Electron Devices and IEEE Electron Device Letters journals for 2018.
2 Dec, 2018: Shivendra Kumar Singh joined the group as a Masters student. Welcome Shivendra!
1 Dec, 2018: Nano-Electronic Research and Development Group (jokingly also called the NERD Lab :-D) conceived.
11 Oct, 2018: Aamir joined the Dept. of Electronics and Communication Engineering, National Institute of Technology Srinagar as a faculty member.

Courses Taught

Nanoelectronics
Issues in deep sub-micron devices
VLSI Design
VLSI Technology
Physical Electronics
Electronic Devices
Mixed Signal Design
Electronic Design Automation

Page updated

Report abuse