Postdoc: New York University, New York, United States; 2017 to 2018
PhD: Indian Institute of Technology Kanpur, India; 2013-2017
B. Tech: National Institute of Technology Jaipur, India; 2007-2011
Since the inception of Sheikh Lab at NITSRI, we have been working with a focus on the wonder material Gallium Nitride (GaN) for RF and power electronics applications. Our work encompasses the development of state-of-the-art analytical and SPICE models, which drive innovations in device performance and efficiency. We bridge the gap between theoretical research and practical application, collaborating closely with industry partners to transfer our research into commercially viable products. We also work with device developers and foundries for process optimization and device-to-circuit co-design. Through our highly marketable research, we aim to contribute significantly to the global pursuit of energy efficiency and sustainability, pushing the boundaries of what's possible in GaN.
As such, it is our consistent endeavor to work with world leading GaN enthusiastic groups to share our strength as part of the overall GaN technological evolution, and thereby arrive at solutions in both RF and power GaN. Within India, we represent one of the groups in the growing value chain, aiming at strengthening the GaN ecosystem in India in particular, and on a global level as well.
Would you be interested in being a part of this journey?