journals
List of International Journal Publications
1.
22nd Jan, 2015
Manash Chanda, Sankalp Jain, Swapnadip De, C.K.Sarkar "IMPLEMENTATION OF SUBTHRESHOLD ADIABATIC LOGIC (SAL) FOR ULTRA- LOW POWER APPLICATION", DOI:10.1109/TVLSI.2014.2385817,IEEE Transactions on Very Large Scale Integration Systems, published in IEEE Xplore on 22nd January, 2015, ScopusSJR:0.62, Impact factor: 1.22.
2.
15th Aug, 2015
Manash Chanda, Prithu Dey, Swapnadip De, C.K.Sarkar "Novel Charge Plasma Based Dielectric Modulated Impact Ionization MOSFET as a Biosensor for Label-Free Detection", doi:10.1016/j.spmi.2015.08.013, accepted in Superlattices and Microstructures, Elsevier on August 15, 2015, Impact factor: 1.98.
3.
15th Aug, 2015
A.Sarkar, Swapnadip De, Anup Dey, C.K.Sarkar "Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model", Journal of Computational Electronics (Springer), volume 11, no.2, pp.182-195, 2012, available in Springerlink (DOI: 10.1007/s10825-012-0396-9), Scopus SJR: 0.46, Impact factor: 1.52.
4.
Jan, 2012
A.Sarkar,Swapnadip De,Anup Dey,C.K.Sarkar "1/f noise and analogue performance study of short-channel cylindrical surrounding gate MOSFET using a neIw subthreshold analytical pseudo-two-dimensional model", IET Circuits, Devices & Systems,vol. 6,issue 1,January 2012,pp.28-34,available in IEEE Xplore, Impact factor:0.91.
5.
Nov, 2012
A.Sarkar,A.K.Das,Swapnadip De,C.K.Sarkar "Effect of gate engineering in double gate MOSFETs for analog/RF applications", Microelectronics Journal, Elsevier,vol.42,issue 11,pp. 873-882,November 2012, Scopus SJR:0.33, Impact factor:0.92.
6.
Oct, 2011
Swapnadip De, A.Sarkar, C.K.Sarkar "Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs", International Journal of Electronics, Taylor & Francis, UK, vol.98, no.10, October 2011, pp.1365-1381, Scopus SJR: 0.30, Impact factor: 0.75.
7.
Nov, 2012
Swapnadip De,A.Sarkar,C.K.Sarkar"Modelling of Characteristic Parameters for Asymmetric DHDMG Mosfet", WSEAS Transactions on Circuits and Systems, Greece, volume 11, issue 11, November 2012, pp. 371-380,Scopus SNIP: 0.27, Scopus SJR:0.16, 2 year cites/doc equivalent to Thomson reuter Impact factor:0.41.
8.
4th Dec, 2014
M.Chanda, Swapnadip De, C.K.Sarkar "Modeling of Characteristic Parameters for Nano-scale junctionless Double Gate MOSFET considering Quantum Mechanical Effect", Journal of Computational Electronics (Springer), article first published online on December 4,2014, DOI: 10.1007/s10825-014-0648-y, Scopus SJR: 0.46, Impact factor: 1.52.
9.
Sep, 2015
M.Chanda, Swapnadip De, C.K.Sarkar "DESIGN AND ANALYSIS OF 32 BIT CLA USING ENERGY EFFICIENT ADIABATIC LOGIC FOR ULTRA LOW-POWER APPLICATION", Journal of Circuits, Systems, and Computers, World Scientific Publishing, vol. 24, issue 10, September 2015, Impact factor: 0.33.
10.
Jan, 2013
A.Sarkar,Swapnadip De,C.K.Sarkar "Asymmetric halo and symmetric Single-Halo Dual –Material Gate and Double-Halo Dual –Material Gate n-MOSFETs characteristic parameter modeling", International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, published online in Wiley Online Library(DOI:10.1002/jnm.1829), vol.26, issue 1, pp.41-55,January 2013, Scopus SJR: 0.27, Impact factor:0.63.
11.
dec, 2011
A.Sarkar,Swapnadip De,Anup Dey,C.K.Sarkar "A new analytical subthreshold model of SRG MOSFET with analogue performance investigation", International Journal of Electronics, Taylor & Francis,UK,vol.99,no.2,December 2011,pp.267-283,Scopus SJR: 0.30,Impact factor:0.75.
12.
dec, 2013
Manash Chanda, Swapnadip De, C.K.Sarkar "Modeling of Parameters for Nano-Scale Surrounding Gate nMOSFET considering Quantum Mechanical Effects", International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 27,pp. 883-895,Article firstpublished online in Wiley Online Library (DOI: 10.1002/jnm.1965) on 18.12.2013,Scopus SJR: 0.27, Impact factor:0.63.
13.
mar, 2012
Swapnadip De, A.Sarkar, C.K.Sarkar “Application of Gaussian profile based DHDMG n-MOSFETs on deep submicron microelectronic circuits", International Journal of Applied Engineering Research, Research India Publication vol.7, no.5, pp.471-483, March 2012, ScopusSJR: 0.13, 2 year cites/doc equivalent to Thomson reuter Impact factor: 0.123.
14.
Jul, 2012
Swapnadip De, A.Sarkar, C.K.Sarkar "Quasi Fermi Potential Based Analytical Sub Threshold Drain Current and Transconductance Model for Practical DHDMG n-Mosfet", International Journal of Applied Engineering Research, Research India Publication, vol.7, no.7, pp.795-811, July 2012, Scopus SJR:0.13, 2 year cites/doc equivalent to Thomson reuter Impact factor: 0.123.
15.
Not Available
Manash Chanda, Tanushree Ganguli, Rounak Dutta, Shouvik Mukhopadhyay,Swapnadip De "Design and Implementaion of 8T Full Adder for High Speed Application”, Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA ) ISSN: 2222-7059 (Print); EISSN: 2222-7067 (Online), vol. 5, issue 1.
16.
2017
Manash Chanda, Tanushree Ganguli, Rounak Dutta, Shouvik Mukhopadhyay,Swapnadip De, "Design and Implementation of 8x8 Adiabatic Multiplier using Single Phase Adiabatic Dynamic Logic”, Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA ) ISSN: 2222-7059 (Print);EISSN: 2222-7067 (Online), vol. 5, issue 1.
17.
2017
Aatrayee Das, Prachi Agarwal, Subhra Sarkar, Sudeshna Mukherjee, Manash Chanda, Swapnadip De " Modelling of Surface Potential and Drain Current for linearly doped short channel nMOSFET with Inner Fringing Field”,Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA ) ISSN: 2222-7059 (Print);EISSN: 2222-7067 (Online), vol. 5, issue 1, pp. 1-6.
18.
2017
Sudeshna Mukherjee, Subhra Sarkar, Prachi Agarwal, Aatrayee Das, Manash Chanda, Swapnadip De "Modelling of the basic parameters for Gaussian doped Symmetric Double Halo Dual Material Gate n-MOSFET ”, Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA ) ISSN: 2222-7059 (Print);EISSN: 2222-7067 (Online), vol. 5, issue 1, pp. 7-11.
19.
2010
Swapnadip De,A.Sarkar,C.K.Sarkar "Modeling of Thermal and Flicker Noise for Double Gate MOSFET", Journal of Electron Devices, France, volume 8, 2010, pp. 320-324, indexed in googlescholar, ISI Indexing under process, ISRA Journal Impact Factor: under process.
20.
jul, 2012
Swapnadip De,A.Sarkar "Modeling of Characteristic Parameter for Submicron MOSFET", The IUP Journal of Electrical & Electronics Engineering, ICFAI University Press,vol.5, issue no.3, pp.67-76, July 2012, indexed in EBSCO database and googlescholar.
21.
2012
Swapnadip De, A.Sarkar, C.K.Sarkar "Fringing Capacitance based surface potential model for pocket DMG n-MOSFETs", Journal of Electron Devices, France, volume 12, 2012, pp. 704-712, indexed in googlescholar,ISI Indexing under process, ISRA Journal Impact Factor: under process
22.
oct, 2014
Debarati Das,Swapnadip De, Manash Chanda, C K Sarkar "Modelling of sub threshold surface potential for short channel Double gate Dual Material Double Halo MOSFET" ,The IUP Journal of Electrical & Electronics Engineering, ICFAI University Press, vol.7 issue no.4, pp. 19-42, October 2014, indexed in EBSCO database and googlescholar, http://connection.ebscohost.com/c/articles/99384998/modeling-subthreshold-surface-potential-short-channel-double-gate-dual-material-double-halo-mosfet.
23.
2012
SwapnadipDe,A.Sarkar,C.K.Sarkar"Threshold voltage and drift-diffusion theory based drain current model for pocket-DMG n-MOSFETs with inner fringing field", Journal of Electron Devices, France, volume 12, 2012, pp. 767-771, indexed in googlescholar, ISI Indexing under process, ISRA Journal Impact Factor: under process.
24.
jan, 2014
Swapnadip De,Angsuman Sarkar "A study of the Characteristic Parameters for Deep-Submicron MOSFETs",The IUP Journal of Electrical & Electronics Engineering, ICFAI University Press,vol.7 issue no.1,pp. 41-52,January2014,indexed in EBSCO database and googlescholar,http://connection.ebscohost.com/c/articles/95087582/study-characteristic-parameters-deep-submicron-mosfets.
25.
2017
Swapnadip De, Mainak Bhattacharya, Aditi Kumari, Poulami Dutta, Ishita Gupta "Comparative study of Surface Potential for non conventional Double Gate MOSFETs", International Journal of VLSI Design and Technology, Journalspub, vol. 1, issue 1, pp. 1-19, indexed in www.googlescholar.com
http://ecc.journalspub.info/index.php/JVDT/issue/view/6
26.
2017
Swapnadip De, Aditi Kumari, Poulami Dutta, Ishita Gupta, Mainak Bhattacharya, "A Review of Subthreshold Surface Potential for Single Gate Dual Material Double Halo MOSFET", International Journal of VLSI Design and Technology, Journalspub, vol. 2, issue 1, pp. 1-20, to be indexed in www.googlescholar.com
27.
may, 2010
Swapnadip De, Angsuman Sarkar, “Thermal and Flicker Noise Modeling of a Double Gate MOSFET”, International Journal on Electronic and Electrical Engineering (IJEEE), ISSN 0974-2042, Scientific Engineering Research Corporation, India, Summer edition 2010, March-May2010,Vol:10,No:01,pp.24-28,http://www.serc.org.in/admin/pdffiles/4-VOL-10-IJEEE.doc.pdf
28.
2009
Swapnadip De,Angsuman Sarkar,Chandan Kumar Sarkar, “Modeling of subthreshold surface potential in short channel, LAC, Double Halo & DMG MOSFETs with inner fringing fields”, InternationalJournal on Electronic and Electrical Engineering (IJEEE), ISSN 0974-2042, Scientific Engineering Research Corporation, India, Spring edition 2009, Vol:01, No: 01,pp.133-141,http://www.serc.org.in/admin/pdffiles/19-vol1ijeee.pdf
29.
2009
Swapnadip De,Angsuman Sarkar,Chandan Kumar Sarkar, “Subthreshold surface potential model for a single-Halo dual-material gate MOSFET”, International Journal on Electronic and Electrical Engineering (IJEEE), ISSN 0974-2042,Scientific Engineering Research Corporation,Springedition2009,Vol:01,No:01,pp.14-18
30.
2009
Angsuman Sarkar, Swapnadip De,Chandan Kumar Sarkar, “Subthreshold Surface Potential Model for a Double-Halo Dual-Material GATE And a Single Halo Dual-Material GATE MOSFET”, International Journal on Electronic and Electrical Engineering (IJEEE), ISSN 0974-2042, Scientific Engineering Research Corporation,India,Spring edition 2009,Vol.:02,no.:02,pp.25-33,http://www.serc.org.in/admin/pdffiles/3-vol2ijeee.pdf
31.
2017
Akashdeep Mazumder, Saim Aktar, Anamika Kumari, Aaswas Ganguly, Swapnadip De "Study of characteristic parameters for Channel and Gate Engineered Double Gate MOSFET considering Gaussian doping and Inner Fringing Capacitance", accepted in Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA ) ISSN: 2222-7059 (Print);EISSN: 2222-7067 (Online).