If you're interested in photonics you're in the right place.
"The World's First GeSn Optical Waveguide-based Sensor Platform for Trace/Atmospheric Gas Detection" has been accepted in the Journal of the Optical Society of America B (JOSA B) [DOI: 10.1364/JOSAB.484610], Date of Posting on JOSA B: 18th April 2023
The world’s first GeSn-based heterojunction phototransistors (HPTs) and its noise equivalent circuit modeling with the highest signal-to-noise ratio (SNR) operating at shortwave infrared (SWIR) region [IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1797-1803, 2019].
The world’s first GeSn-based p-n-p HPTs with the best spectral responsivity for midinfrared (MIR) applications [IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3867-3873, 2019].
Effects of GeSn/Ge hetero-interface defect on the performance of HPTs [IEEE Sensors Journal, vol. 21, no. 5, pp. 5975-5982, 2020].
Si-based GeSn multiple-quantum-well (MQW) HPTs for SWIR applications [Semiconductor Science and Technology, vol. 36, no. 6, 2021].
Si/SiO2 Distributed-Bragg-reflector (DBR) resonant cavity enhanced (RCE) GeSn-based p-i-n photodetectors [IEEE Sensors Journal, vol. 21, no. 8, pp. 9900-9908, 2021]
The world’s first GeSn MQW p-i-n photodetectors with cut-off wavelength up to 3.5 µm for MIR bio-sensing applications [accepted on IEEE Transactions on NanoBiosciences, 2021, in press]
The world’s first noise equivalent circuit modeling of Si/SiO2 DBR-based lateral rib waveguide Ge p-i-n photodetector for sensing in SWIR regime [Submitted on Scientific Reports (Nature), 2021, Under Review].
We are one of the leading groups in the field of group-IV semiconductor alloys technologies in the world and INDIA that can demonstrate SiGeSn-based passive and active devices.
Studies of physical processes—electrical and optical properties in novel group-IV alloys.
Various types of photonic sensors using novel group-IV alloys for mid-infrared (MIR), long-wave infrared (LWIR), and terahertz (THz) applications.
Group-IV alloy-based surface and edge light-emiting diodes and transistors.
Advanced detectors—utilizing nanostructures, photonic crystals, and quantum-wells structures.
Quatum devices—single-photon avalanche diodes (SPADs)
Group-IV alloy-based Electro-absorption Modulator (EAM) for MIR applications.
Research area: Material characterization and on-chip MIR and THz sensors
Research area: Noise analysis of metal-semiconductor-metal photodetectors
Research area: Design and development of on-chip sensors for LWIR applications
Research area: Single-photon avalanche detectors (SPADs) for cryogenic and quantum applications
Research area: Nanostructure-based P-I-N photodetectors and SPADs for room temperature applications
Year 2021:
Anushpamathi Sundararajan (UG, External Candidate, VIT Chennai), May 18th~July 17th, 2021, ECE, LNMIIT, Jaipur.
Year 2022:
Apoorv Sharma (B.Tech, LNMIIT Jaipur), Research area: Photonic Sensors, May 29th~July 28, 2022.
Tanisha Bohra (M.Sc., JNVU, Jodhpur), Research area: Photonic Sensors, May 29th~July 28, 2022.
Nischay Thapar (B.Tech, 4th Yr, LNMIIT Jaipur), Research area: Photonic Devices, May 29th~July 28, 2022.
Bhavika Agarwal (B.Tech-M.Tech (Dual-Degree), ECE, LNMIIT Jaipur), Research area: Photonic Devices, May 29th~July 28, 2022.
Year 2023:
Neha Soni (B.Tech-M.Tech (Dual-Degree), ECE, LNMIIT Jaipur), Research area: Photonic Sensors, May 21~July 21, 2023.
Tanisha Bohra (M.Sc., JNVU, Jodhpur), Research area: Photonic Sensors, May 21~July 21, 2023.
Advaita Sinha (B.Tech, ECE, LNMIIT), Research area: Avalanche Detectors, May 21~July 21, 2023.
Divyam Khetan (B.Tech, ECE, LNMIIT), Research area: Avalanche Detectors, May 21~July 21, 2023.
Trishad Bisawa (B.Tech, ECE, LNMIIT), Research area: Detectors, May 21~July 21, 2023.
Amal Jani (Integrated MSc in Photonics, Cochin University of Science and Technology, Kerala), Research area: Photonic Sensors, May 21~July 21, 2023.
Year 2024:
Surajit Maity (B.Tech, 4th Yr, University of Calcutta), Research area: LED, May 27~July 26, 2024.
Jagrati Yadav (M.Sc Tech,, NIT Waranagal), Research area: Photonic Sensors, May 27~July 26, 2024.
Pearl Agarwal (B.Tech, ECE, LNMIIT Jaipur), Research area: LED, May 27~July 26, 2024.
Achyarul Mabruri, Nationality: Indonesian (B.Tech, DTU), Research area: Group-IV Materials, May 27~July 26, 2024.
Yash Bijawat (B.Tech, ECE, LNMIIT Jaipur), Research area: LED, May 27~July 26, 2024.
Shubh Jaiswal (B.Tech, ECE, LNMIIT Jaipur), Research area: Detectors, May 27~July 26, 2024.
Som Mudgil (B.Tech, ECE, LNMIIT Jaipur), Research area: Group-IV Materials, May 27~July 26, 2024.
Jyoti Tater (B.Tech, ECE, LNMIIT Jaipur), Research area: Avalanche Detectors, May 27~July 26, 2024.
Year 2025:
Neha Soni (B.Tech-M.Tech (Dual-Degree), ECE, LNMIIT Jaipur), Research area: Electrical and Optical Characterization of Group-IV Alloy, May 27~July 27, 2025.
Harsh Dixit (B.Tech-M.Tech (Dual-Degree), ECE, LNMIIT Jaipur), Research area: Modulator, May 27~July 27, 2025.
Rahul Sharma (B.Tech, ECE, LNMIIT Jaipur), Research area: Avalanche Detectors, May 27~July 27, 2025.
Urvi Tiwari (B.Tech, ECE, LNMIIT Jaipur), Research area: Photonic Sensors, May 27~July 27, 2025.
Year 2026:
Gargi Chaturvedi (B.Tech, ECE, LNMIIT Jaipur), Research area: P-I-N Detectors, June 01~July 27, 2025.
Sunidhi Gupta (M.Sc. in Physics (Specialization in Semiconductor), MIT WPU, Pune), Research area: Nanowire Detectors, June 01- July 27, 2025.
Sunita Kuri (M.Sc. in Photonics, DIAT, Pune), Research area: Solar Cell, June 01- July 27, 2025.
Nikhali Hadgale (M.Sc. in Photonics, DIAT, Pune), Research area: Modulator, June 01- July 27, 2025.