If you're interested in photonics you're in the right place.
"The World's First GeSn Optical Waveguide-based Sensor Platform for Trace/Atmospheric Gas Detection" has been accepted in the Journal of the Optical Society of America B (JOSA B) [DOI: 10.1364/JOSAB.484610], Date of Posting on JOSA B: 18th April 2023
The world’s first GeSn-based heterojunction phototransistors (HPTs) and its noise equivalent circuit modeling with the highest signal-to-noise ratio (SNR) operating at shortwave infrared (SWIR) region [IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1797-1803, 2019].
The world’s first GeSn-based p-n-p HPTs with the best spectral responsivity for midinfrared (MIR) applications [IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3867-3873, 2019].
Effects of GeSn/Ge hetero-interface defect on the performance of HPTs [IEEE Sensors Journal, vol. 21, no. 5, pp. 5975-5982, 2020].
Si-based GeSn multiple-quantum-well (MQW) HPTs for SWIR applications [Semiconductor Science and Technology, vol. 36, no. 6, 2021].
Si/SiO2 Distributed-Bragg-reflector (DBR) resonant cavity enhanced (RCE) GeSn-based p-i-n photodetectors [IEEE Sensors Journal, vol. 21, no. 8, pp. 9900-9908, 2021]
The world’s first GeSn MQW p-i-n photodetectors with cut-off wavelength up to 3.5 µm for MIR bio-sensing applications [accepted on IEEE Transactions on NanoBiosciences, 2021, in press]
The world’s first noise equivalent circuit modeling of Si/SiO2 DBR-based lateral rib waveguide Ge p-i-n photodetector for sensing in SWIR regime [Submitted on Scientific Reports (Nature), 2021, Under Review].
We are one of the leading groups in the field of group-IV semiconductor alloys technologies in the world and INDIA that can demonstrate SiGeSn-based passive and active devices.
Studies of physical processes—electrical and optical properties in novel group-IV alloys.
Various types of photonic sensors using novel group-IV alloys for mid-infrared (MIR), long-wave infrared (LWIR), and terahertz (THz) applications.
Group-IV alloy-based surface and edge light-emiting diodes and transistors.
Advanced detectors—utilizing nanostructures, photonic crystals, and quantum-wells structures.
Quatum devices—single-photon avalanche diodes (SPADs)
Group-IV alloy-based Electro-absorption Modulator (EAM) for MIR applications.
Research area: Surface-emitting MQW and quantum-dot-based LED
Research area: Edge-emitting LEDs on Si platform
Research area: Impact of strain on detector's performance
Research area: Material characterization and on-chip MIR and THz sensors
Research area: Noise analysis of metal-semiconductor-metal photodetectors
Research area: Design and development of on-chip sensors for LWIR applications
Research area: Single-photon avalanche detectors (SPADs) for cryogenic and quantum applications
Research area: Nanostructure-based P-I-N photodetectors and SPADs for room temperature applications
Apoorv Sharma (B.Tech, 4th Yr, LNMIIT Jaipur), LUSIP 2022 and BTP Work, Research area: Photonic Sensors and Detectors [Status: Completed]
Anushpamathi Sundararajan (UG, External Candidate, VIT Chennai), Summer Research Intern under LUSIP Program (May 18th~July 17th, 2021), ECE, LNMIIT, Jaipur [Status: Completed].
Tanisha Bohra (M.Sc. 2nd Yr, JNVU, Jodhpur), Research area: Photonic Sensors [Status: Completed]
Nischay Thapar (B.Tech, 4th Yr, LNMIIT Jaipur), Research area: Photonic Devices [Status: Completed]
Jagrati Yadav (M.Sc Tech, 2nd Yr, NIT Waranagal), LUSIP 2024, Research area: Photonic Sensors [Status: Completed]
Surajit Maity (B.Tech, 4th Yr, University of Calcutta), LUSIP 2024, Research area: LED [Status: Completed]
Divyam Khetan (B.Tech, 3rd Yr, LNMIIT Jaipur), LUSIP 2023, Research area: Detectors [Status: Completed]
Pearl Agarwal (B.Tech, 4th Yr, LNMIIT Jaipur), LUSIP 2024, Research area: LED [Status: Completed]
Achyarul Mabruri, Nationality: Indonesian (B.Tech, 4th Yr, DTU), LUSIP 2024, Research area: Materials [Status: Completed]