If you're interested in photonics you're in the right place.
"The World's First GeSn Optical Waveguide-based Sensor Platform for Trace/Atmospheric Gas Detection" has been accepted in the Journal of the Optical Society of America B (JOSA B) [DOI: 10.1364/JOSAB.484610], Date of Posting on JOSA B: 18th April 2023
The world’s first GeSn-based heterojunction phototransistors (HPTs) and its noise equivalent circuit modeling with the highest signal-to-noise ratio (SNR) operating at shortwave infrared (SWIR) region [IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1797-1803, 2019].
The world’s first GeSn-based p-n-p HPTs with the best spectral responsivity for midinfrared (MIR) applications [IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3867-3873, 2019].
Effects of GeSn/Ge hetero-interface defect on the performance of HPTs [IEEE Sensors Journal, vol. 21, no. 5, pp. 5975-5982, 2020].
Si-based GeSn multiple-quantum-well (MQW) HPTs for SWIR applications [Semiconductor Science and Technology, vol. 36, no. 6, 2021].
Si/SiO2 Distributed-Bragg-reflector (DBR) resonant cavity enhanced (RCE) GeSn-based p-i-n photodetectors [IEEE Sensors Journal, vol. 21, no. 8, pp. 9900-9908, 2021]
The world’s first GeSn MQW p-i-n photodetectors with cut-off wavelength up to 3.5 µm for MIR bio-sensing applications [accepted on IEEE Transactions on NanoBiosciences, 2021, in press]
The world’s first noise equivalent circuit modeling of Si/SiO2 DBR-based lateral rib waveguide Ge p-i-n photodetector for sensing in SWIR regime [Submitted on Scientific Reports (Nature), 2021, Under Review].
We are one of the leading groups in the field of group-IV semiconductor alloys technologies in the world and INDIA that can demonstrate SiGeSn-based passive and active devices.
Studies of physical processes in novel group-IV alloys
Design and analysis of the various type of photonic sensors using novel group-IV alloys for short-wave infrared (SWIR) and mid-infrared (MIR) applications
Light emitters and resonators using group-IV alloys.
Design and analysis of Group-IV alloy-based Electro-absorption Modulator (EAM) for MIR applications.
Dr. Harshvardhan Kumar, Assistant Professor and Head of Group, ECE
Yash Bijawat, Final Yr. B.Tech, ECE
Sonali Rana, M.Tech Scholar
Piyush, 3rd Yr, B.Tech, ECE
Neha Soni, 4th Yr, B.Tech-M.tech Integrated, ECE
Som Mudgil, Final Yr, B.Tech, ECE
Urvi Taiwari, 3rd Yr, B.Tech, ECE
Jyoti Tater, Final Yr, B.Tech, ECE
Shubh Jaiswal, Final Yr, B.Tech, ECE
Apoorv Sharma (B.Tech, 4th Yr, LNMIIT Jaipur), LUSIP 2022 and BTP Work, Research area: Photonic Sensors and Detectors [Status: Completed]
Anushpamathi Sundararajan (UG, External Candidate, VIT Chennai), Summer Research Intern under LUSIP Program (May 18th~July 17th, 2021), ECE, LNMIIT, Jaipur [Status: Completed].
Tanisha Bohra (M.Sc. 2nd Yr, JNVU, Jodhpur), Research area: Photonic Sensors [Status: Completed]
Nischay Thapar (B.Tech, 4th Yr, LNMIIT Jaipur), Research area: Photonic Devices [Status: Completed]
Jagrati Yadav (M.Sc Tech, 2nd Yr, NIT Waranagal), LUSIP 2024, Research area: Photonic Sensors [Status: Completed]
Surajit Maity (B.Tech, 4th Yr, University of Calcutta), LUSIP 2024, Research area: LED [Status: Completed]
Divyam Khetan (B.Tech, 3rd Yr, LNMIIT Jaipur), LUSIP 2023, Research area: Detectors [Status: Completed]
Pearl Agarwal (B.Tech, 4th Yr, LNMIIT Jaipur), LUSIP 2024, Research area: LED [Status: Completed]
Achyarul Mabruri, Nationality: Indonesian (B.Tech, 4th Yr, DTU), LUSIP 2024, Research area: Materials [Status: Completed]