Research Publications

Harshvardhan Kumar, Sinha, A. & Yang, C. High-Performance Si1−xSnx/Si Avalanche Photodiode on Si Platform at Room Temperature. J. Electron. Mater. (2025). https://doi.org/10.1007/s11664-025-11885-9 

Harshvardhan Kumar, Apoorv Sharma, and Shean-Jen Chen. "Resonant-Cavity-Enhanced Ge/Ge1-xSnx Metal-Semiconductor-Metal Photodetector for 2 μm-Band Applications." Semiconductor Science and Technology, 2024, doi:10.1088/1361-6641/ad9f9f 

Harshvardhan Kumar and R. Basu, “High – Responsivity Waveguide-Integrated Ge1-xSnx/Ge Based p-i-n Photodetectors on Silicon Platform for Short-Wave Infrared Applications,” in IEEE Sensors Letters, 2024, doi: 10.1109/LSENS.2024.3512942. 

Harshvardhan Kumar, N. Soni, A. Kumar Pandey and P. Susthitha Menon, “High-Performance Germanium-Tin Fabry-Perot Microcavity Strip-Loaded Mid-Infrared Waveguide-Based Optical Sensors,” in IEEE Sensors Journal, vol. 24, no. 23, pp. 38666-38676, 1 Dec.1, 2024, doi: 10.1109/JSEN.2024.3474771. 

J. Husna, N.A. Jamil, K.S. Siow, T. R. Lenka, Harshvardhan Kumar, P. Chelvanathan, M. A. Mohamed, A.R. Zain, J. Sampe, & P. S. Menon. (2024). Numerical Optimization of Plasmonic CuO-Based Semi-Transparent Thin Film Solar Cell Device via L9 Taguchi Orthogonal Array Method and ANOVA. International Journal of Integrated Engineering, 16(9), 264-272. 

Oehme, Michael, Harshvardhan Kumar, Christian Spieth, Soeren Schaeffer, Maurice Wanitzek, Lukas Seidel, Erich Kasper, and Daniel Schwarz.”GeSn p-n-p Heterophototransistor on Si,” in Journal of Lightwave Technology, vol. 42, no. 17, pp. 5981-5988, 1 Sept.1, 2024, doi: 10.1109/JLT.2024.3404244. 

Harshvardhan Kumar* and M. Oehme, “Design of Mid-Infrared Ge1-xSnx/Ge Heterojunction Photodetectors on GeSnOI Platform with a Bandwidth Exceeding 100 GHz,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 1: SiGeSn Infrared Photon. And Quantum Electronics, pp. 1-8, Jan.-Feb. 2025, Art no. 3800108, doi: 10.1109/JSTQE.2024.3396608. 

Bor-Wei Liang, Wen-Hao Chang, Chun-Sheng Huang, You-Jia Huang, Jyun-Hong Chen, Kai-Shin Li, Kristan Bryan Simbulan, Harshvardhan Kumar, Ching-Yuan Su, Chieh-Hsiung Kuan, and Yann-Wen Lan  "Self-powered broadband photodetection enabled by facile CVD-grown MoS 2/GaN heterostructures." Nanoscale 15.45 (2023): 18233-18240. 

Harshvardhan Kumar, A. Sharma and T. Bohra, "Novel Ge1-xSix-on-Al2O3-Based Rib Optical Waveguide Mid-IR Sensors on SiO2 Platform," in IEEE Sensors Letters, vol. 8, no. 4, pp. 1-4, April 2024, Art no. 2000104, doi: 10.1109/LSENS.2024.3374360. 

Harshvardhan Kumar, et al. "Polarization diversity schemes for gas sensing applications: a comprehensive analysis and optimal design of high-performance S i 1− x G e x mid-infrared asymmetric rib cross-slot waveguides." JOSA B 40.12 (2023): 3246-3254. 

Harshvardhan Kumar, V. Timofeev and R. Basu, "Mid-Infrared Photodetectors Based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor With an i-GeSn Absorber Layer," in IEEE Sensors Journal, vol. 23, no. 23, pp. 28759-28768, 1 Dec.1, 2023, doi: 10.1109/JSEN.2023.3319501. 

B. Agarwal and Harshvardhan Kumar, "Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications," in IEEE Sensors Journal, vol. 23, no. 15, pp. 16797-16804, 1 Aug.1, 2023, doi: 10.1109/JSEN.2023.3287880.

Harshvardhan Kumar, and Ankit Kumar Pandey. "Numerical investigation of a Ge 1-x Sn x-on-AlN waveguide and its sensing mechanism for the detection of trace gases in the mid-infrared regime." JOSA B 40.6 (2023): 1427-1434. 

Harshvardhan Kumar and A. K. Pandey, "A Simulation-Based Study of Back-Illuminated Lateral Ge/GeSn/Ge Photodetectors on Si Platform for Mid-Infrared Image Sensing," in IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 1721-1727, April 2023, doi: 10.1109/TED.2023.3242929.

Harshvardhan Kumar and C. -H. Lin, "High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction," in IEEE Photonics Journal, vol. 15, no. 1, pp. 1-8, Feb. 2023, Art no. 6800408, doi: 10.1109/JPHOT.2023.3236817.

Harshvardhan Kumar, Qimiao Chen, and Chuan Seng Tan. "Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications." Semiconductor Science and Technology (2023). 

Pandey, Ankit Kumar, and Harshvardhan Kumar. "Quality factor enhanced plasmonic grating sensor in the near infrared region of application." Optical and Quantum Electronics 55.1 (2023): 57. 

Harshvardhan Kumar, A. Kumar Pandey and C. -H. Lin, "Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications," in IEEE Journal of the Electron Devices Society, vol. 10, pp. 649-659, 2022, doi: 10.1109/JEDS.2022.3195210 (IF: 2.523).

Harshvardhan Kumar and R. Basu, "Design of Mid-Infrared Ge1–x Snx Homojunction p-i-n Photodiodes on Si Substrate," in IEEE Sensors Journal, vol. 22, no. 8, pp. 7743-7751, 15 April 15, 2022, DOI: 10.1109/JSEN.2022.3159833 (IF: 4.325).

Harshvardhan Kumar and A. K. Pandey, "GeSn-based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications," in IEEE Transactions on NanoBioscience, 2021, DOI: 10.1109/TNB.2021.3136571 (IF: 3.206). 

Harshvardhan Kumar, "High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors." Semiconductor Science and Technology 36.6 (2021): 065023. , DOI: 10.1088/1361-6641/abf908 (IF: 2.048). 

Harshvardhan Kumar and R. Basu, "Effect of Defects on the Performance of Si-Based GeSn/Ge Mid-Infrared Phototransistors," in IEEE Sensors Journal, vol. 21, no. 5, pp. 5975-5982, 1 March1, 2021, doi: 10.1109/JSEN.2020.3036890. (IF: 4.325). 

S. Ghosh, Harshvardhan Kumar, B. Mukhopadhyay and G. -E. Chang, "Design and Modeling of High-Performance DBR-based Resonant-Cavity-Enhanced GeSn Photodetector for Fibre-Optic Telecommunication Networks," in IEEE Sensors Journal, DOI: 10.1109/JSEN.2021.3054475. (IF: 4.325). 

Harshvardhan Kumar and Rikmantra Basu, R. Study of the effect of temperature on the detectivity and sensitivity of GeSn-based heterojunction phototransistor for mid-wave infrared applications. Appl. Phys. B 127, 13 (2021). https://doi.org/10.1007/s00340-020-07569-3 (IF: 2.171) 

S. Ghosh, K-C Lin, C-H Tsai, Harshvardhan Kumar, Q. Chen, L. Zhang, B. Son, C. S. Tan, M. Kim, B. Mukhopadhyay, and G-E Chang, "Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications." Micromachines 11.9 (2020): 795.  (IF: 3.523) 

Harshvardhan Kumar and Rikmantra Basu, "Design and Analysis of Ge/Ge1-xSnx/Ge Heterojunction Phototransistor for MIR Wavelength Biological Applications," in IEEE Sensors Journal, vol. 20, no. 7, pp. 3504-3511, 1 April1, 2020, DOI: 10.1109/JSEN.2019.2960006 (IF: 4.325). 

Harshvardhan Kumar, Rikmantra Basu and Guo-En Chang, "Impact of Temperature and Doping on the Performance of Ge/Ge1-xSnx/Ge Heterojunction Phototransistors," in IEEE Photonics Journal, vol. 12, no. 3, pp. 1-14, June 2020, Art no. 6801814, DOI: 10.1109/JPHOT.2020.2996808 (IF: 2.25). 

Harshvardhan Kumar and Rikmantra Basu, "Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors," in IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3867-3873, Sept. 2019, DOI: 10.1109/TED.2019.2925892 (IF: 3.221). 

Harshvardhan Kumar, Rikmantra Basu and Jyoti Gupta, "Small-Signal Compact Circuit Modeling of Group IV Material-Based Heterojunction Phototransistors for Optoelectronic Receivers," in IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1797-1803, April 2019, DOI: 10.1109/TED.2019.2896068 (IF: 3.221).

Harshvardhan Kumar and Rikmantra Basu, “Noise Analysis of Optimized Ge/Ge1-xSnx/Ge p-n-p Heterojunction Phototransistors for Long-Wavelength Optical Receivers” Journal of Optical and Quantum Electronics, Springer, vol. 51, no. 2, pp. 1–12, 2019.(IF: 2.794) [DOI: 10.1007/s11082-019-1765-4]. 

Ankit Kumar Pandey, Rikmantra Basu, Harshvardhan Kumar and Guo-En Chang, "Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 118-126, 2019, DOI: 10.1109/JEDS.2018.2884253 (IF: 2.525). 

Rikmantra Basu, Preeti Giri and Harshvardhan Kumar, “Influence of Doping and Splitting of Source in a Group IV Material Based Tunnel Field Effect Transistor” Journal of Electronic Materials, Springer, vol. 48, pp. 2691-2699, 2019 (IF: 2.047) [DOI: 10.1007/s11664-019-06923-2]. 

Harshvardhan Kumar and Rikmantra Basu, “Noise Modeling of Group IV Material based Heter-junction Photo Transistor for Fibre Optic Telecommunication Networks”, IEEE Sensors Journal, vol. 18, No. 22, 2018 (IF: 4.325).  [DOI: 10.1109/JSEN.2018.2869975]. 

Harshvardhan Kumar and Rikmantra Basu, (2021) Impacts of Emitter Layer Thickness on the Cutoff Frequency of GeSn/Ge Heterojunction Phototransistors. In: Das N.R., Sarkar S. (eds) Computers and Devices for Communication. CODEC 2019. Lecture Notes in Networks and Systems, vol 147. Springer, Singapore. https://doi.org/10.1007/978-981-15-8366-7_30 

Agarwal, Bhavika, Harshvardhan Kumar, and Shean-Jen Chen. "Design of Si1-xSnx alloy-based split-gate MOS field-effect phototransistors for infrared applications." Physics and Simulation of Optoelectronic Devices XXXIII. Vol. 13360. SPIE, 2025. 

Harshvardhan Kumar, A. Sinha, and P. Susthitha Menon, “Simulation of Germanium-Tin-based n+/i-Well Dot Single-Photon Avalanche Diode for Fiber-Optic Telecommunication Networks” 2025, IEEE EDTM 2025, Hong Kong (Accepted) 

Harshvardhan Kumar, "Design Considerations for the Optimization of Propagation Loss of Ge1-xSix-on-Al2O3 Optical Waveguides for the 2-μm Communication Band." 6th URSI Regional Conference on Radio Science, pp. 1-4, 2024, Bhimtal, India, DOI: 10.46620/URSI_RSRC24/0584SGL5129 

Rikmantra Basu, Harshvardhan Kumar, and Bhavika Agarwal, "Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications", XXXVth URSI General Assembly and Scientific Symposium, 2023/1 , Japan, DOI: 10.46620/URSIGASS.2023.1132.JGHO3400 

A. K. Pandey and Harshvardhan Kumar, "Numerical simulation of silicon grating-based plasmonic sensor," 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2022, pp. 189-190, DOI: 10.1109/NUSOD54938.2022.9894747.

Harshvardhan Kumar and A. K. Pandey, "Si-based High Responsivity Germanium-Tin MQW p-i-n Photodetectors for Broadband Applications," 2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC), 2022, pp. 1-3, DOI: 10.23919/AT-AP-RASC54737.2022.9814219.

Lin, Kuan-Chih, Harshvardhan Kumar, and Guo-En Chang. "Germanium-Tin Lateral pin Waveguide Photodetectors for Mid-Infrared Silicon Photonics." CLEO: Applications and Technology. Optical Society of America, 2021, DOI: https://doi.org/10.1364/CLEO_AT.2021.JW1A.140

Harshvardhan Kumar and Rikmantra Basu, "Comprehensive Study and Noise Analysis of GeSn-based p-n-p Heterojunction Phototransistors for Efficient Detection," 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, 2018, pp. 11-12. DOI: 10.1109/NUSOD.2018.8570253 

Harshvardhan Kumar and Rikmantra Basu, "Enhanced Signal-to-Noise Ratio of Ge/Gei-xSnX/Ge based Multiple Quantum Well Heterojunction Phototransistor for SWIR Photodetection," 2019 URSI Asia-Pacific Radio Science Conference (AP-RASC), New Delhi, India, 2019, pp. 1-4, DOI: 10.23919/URSIAP-RASC.2019.8738516.