EXPERIMENT 1

TITLE OF THE EXPERIMENT: To simulate the electrical characteristics of semiconductor diodes.

AIM OR OBJECTIVE: To simulate the electrical characteristics of semiconductor diodes and analyze their performance under both forward and reverse bias conditions across varying temperatures and to determine key diode parameters.

1.Simulate the I-V characteristics of semiconductor diode under forward and reverse bias condition.

2.Extract critical parameters such as reverse saturation current (Io) and forward voltage (Vf).

3. Study the effect of temperature variations on diode performance .

4.Compare simulated data with theoretical models and manufacturer data sheet values.

COMPONENTS AND SPECIFICATIONS:

THEORETICAL BACKGROUND FOR THE EXPERIMENT/VALIDATION FOR THE EXPERIMENT

CIRCUIT DIAGRAM:

DIODE FORWARD BIAS CHARACTERISTICS CIRCUIT

GIVEN DATA:DIODE SPECIFICATIONS:

Forward resistance of diode Rf=0
Reverse resistance of diode Rr=∞
Cut in voltage of diode Vγ =0.6 V
Peak forward current=2.5A
Input voltage=10V

STEP BY STEP PROCEDURE TO CARRY OUT THE EXPERIMENT:

Launch LTspice window.
Go to file and then New Schematic.
Go to edit and then components and choose the required components and draw the circuit diagram for obtaining the VI characteristics.
Set the values of the components as per the circuit diagram.
Add two labels V1 and V0 across diode.
Then go to simulate , edit simulation coommand and DC sweep
Then run the simulation.
Record the obtained VI characteristics.
To obtain the Temperature effect ,go to (.t)add directive."STEM TEMP"<TEMP1><TEMP2><INCREMENT>(EX.,STEMP REMP 30 40 5)
Then run the simulation.
Record the obtained VI characteristics.

Table of observations.

(i)Forward characteristics By fixing value of value of series resistance R=1kΩ

REVERSE BIAS

GRAPH

VOLTAGE AND CURRENT MEASUREMENTS

VI characteristics of PN junction diode after simulation

VI reverse characteristics of PN junction diode after simulation

EFFECT OF TEMPERATURE ON FORWARD BIAS

TEMPERATURE , VOLTAGE AND CURRENT MEASUREMENTS

RESULTS AND DISCUSSION

The experiment measured the relationship between voltage and current input values. The results demonstrate that as V1 increases the voltage difference VD and current ID increases proportionally , confirming the linearly in the systems behaviour under the tested conditions

CONCLUSIONS

In conclusion the experiment verified the direct relationship between input voltage (V1) and the resulting electrical parameters (VD AND ID). The data collected provides insight into the predictable nature of this system's behaviour , aligning with theoretical models.

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