WHAT WE DO
WHAT WE DO
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Led by Dr. Mohammad Masum Billah, the Advanced Semiconductor Devices Laboratory (ASDL) at IUT conducts research at the intersection of materials science, device physics, and computing systems engineering, spanning from transistor-level analysis to system-level architecture design. The group’s work targets the development of next-generation computing hardware, with a strong emphasis on AI accelerators, ultra-low-power electronics, and advanced display and sensing technologies.
Our core research integrates electronic materials, thin-film and nanoscale device engineering, and circuit-to-system co-design methodologies. The lab employs a comprehensive, multi-scale research pipeline, encompassing Technology Computer-Aided Design (TCAD) for device modeling, Finite Element Analysis (FEA) for structural, thermal, and electrostatic characterization, and SPICE-based circuit and system-level simulations for performance, reliability, and energy-efficiency validation.
Through this vertically integrated approach, EMDRG aims to contribute to advancements in emerging materials and device concepts for current and future applications in intelligent computing systems and sustainable electronics.
Some of our active projects are listed below:
Mobility and Transconductance Analysis of Thin-Film Transistors Based on Amorphous, Nanocrystalline, Microcrystalline, and Polycrystalline Silicon.
Mobility and Transconductance Analysis of Thin-Film Transistors Based on Amorphous, Nanocrystalline, Microcrystalline, and Polycrystalline Silicon.
This research utilizes TCAD simulations to investigate how varying crystalline grain size impacts the mobility and transconductance of silicon-based Thin-Film Transistors (TFTs). By modeling the transition from amorphous to polycrystalline structures, the study aims to quantify the relationship between larger grain sizes and improved carrier transport to establish design guidelines for high-performance devices.
Design and Analysis of Low Power Circuits Using Coplanar IGZO TFT for Energy-Efficient Artificial Intelligence Hardware
Design and Analysis of Low Power Circuits Using Coplanar IGZO TFT for Energy-Efficient Artificial Intelligence Hardware
This research employs circuit-level simulation and device modeling to investigate the feasibility of indium–gallium–zinc oxide (IGZO) thin-film transistors for hardware acceleration architectures. By analyzing the electrical behavior of IGZO-based devices under varying biasing, geometrical, and material conditions, the study aims to characterize key performance metrics. The research further explores the integration of IGZO transistors into neuron and synaptic circuit blocks to evaluate their suitability for energy-efficient artificial intelligence and edge-computing applications.
Quantum Confinement Effects in Dual-Channel Oxide Thin-Film Transistors (IGZO and ITZO) Using TCAD Simulation
Quantum Confinement Effects in Dual-Channel Oxide Thin-Film Transistors (IGZO and ITZO) Using TCAD Simulation
This research studies how quantum confinement changes the electrical behavior of dual-channel oxide TFTs made with IGZO and ITZO layers. Using Silvaco TCAD (ATHENA/ATLAS), the device structure and material properties are modeled and simulated to generate transfer and output characteristics (Id–Vg and Id–Vd). The work compares classical and quantum-corrected simulations to observe shifts in electron distribution near the interface, changes in threshold voltage, subthreshold swing, and on current, helping explain performance improvements and design trade-offs in advanced oxide TFTs for display and flexible electronics.
A Study on Double Channel Metal-Oxide Based Source-Gated Thin-Film Transistors
A Study on Double Channel Metal-Oxide Based Source-Gated Thin-Film Transistors
This research focuses on the design and TCAD-based simulation of double-channel metal-oxide source-gated thin-film transistors (SG-TFTs) to analyze their electrical performance and charge transport behavior. By introducing a dual-channel structure along with Schottky source contact engineering, the study investigates improvements in current control, output resistance, threshold voltage stability, and low-power operation.
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