Electrical Instability in Flexible Polysilicon Thin-Film Transistors Under Random Mechanical Stress

IEEE Transactions on Electron Devices Volume: 72 Issue: 12

DOI: 10.1109/TED.2025.3627583

P‐20: High Subthreshold Swing Using High‐Performance Dual‐Gate IZO/IGZTO TFTs for AMOLED Display

SID Symposium Digest of Technical Papers 56(1):1463-1466

DOI: 10.1002/sdtp.18468

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm V s and Excellent Stability

Advanced Electronic Materials 11(8)

DOI: 10.1002/aelm.202400766

Extraction of Density of State of Dual Gate Amorphous In-Ga-Zn-O Transistors From Meyer-Neldel (MN) Analysis

IEEE Journal of the Electron Devices Society PP(99):1-1

DOI: 10.1109/JEDS.2025.3628873

Bottom-gate Poly-Si Thin Film Transistors Fabricated by Blue Laser Diode Annealing and Their Reliability Under DC and AC Bias Stresses

IEEE Electron Device Letters PP(99):1-1

DOI: 10.1109/LED.2024.3480123

A Study on High Performance, Dual-Gate a-IZO/a-IGZTO TFTs with Excellent Stability

IEEE Electron Device Letters PP(99):1-1

DOI: 10.1109/LED.2024.3442152

High quality a-InGaZnO and a-ZrAlO deposited at 375 °C by spray pyrolysis for low voltage operation TFTs

Materials Letters 367:136600

DOI: 10.1016/j.matlet.2024.136600

Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Advanced Photonics Research 5(4)

DOI: 10.1002/adpr.202300215

High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics

IEEE Journal of the Electron Devices Society 12:587-593

DOI: 10.1109/JEDS.2024.3438210

A Compact DC-DC Converter Using Low-Temperature Poly-Si Oxide Thin-Film Transistors

IEEE Electron Device Letters PP(99):1-1

DOI: 10.1109/LED.2023.3311459

Performance Comparison Between VoLTE and non-VoLTE Voice Calls During Mobility in Commercial Deployment: A Drive Test-Based Analysis

2023 10th International Conference on Electrical Engineering, Computer Science and Informatics (EECSI)

DOI: 10.1109/EECSI59885.2023.10295903

Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors

IEEE Electron Device Letters PP(99):1-1

DOI: 10.1109/LED.2023.3235979

Highly Robust Flexible Poly-Si Thin Film Transistor Under Mechanical Strain With Split Active Layer for Foldable Active Matrix Organic Light Emitting Diode Display

IEEE Electron Device Letter PP(99):1-1

DOI: 10.1109/LED.2022.3225863

Highly Sensitive, Stretchable Pressure Sensor Using Blue Laser Annealed CNTs

Nanomaterials 12(13)

DOI: 10.3390/nano12132127

67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display

SID Symposium Digest of Technical Papers 53(1):893-896

DOI: 10.1002/sdtp.15637

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