Quantum Spintronics Group

At the Quantum Spintronics (Q-SPIN) group, we conduct cutting-edge experiments to advance applied spintronic devices through the use of emerging quantum materials. Our focus research areas are as follows:

ACS Nano, (2025); 10.1021/acsnano.5c02048

References:

Nature Nanotechnol. 15, 47–52 (2020).
Nature Electron 3, 446–459 (2020).

Spin-Hall nano-oscillators for spintronic applications

Spin-Hall nano-oscillators (SHNOs) are a class of nanoscale devices that leverage the spin Hall effect to generate and manipulate high-frequency spin waves and microwave signals. These devices offer exceptional tunability, low power operation, and seamless integration with CMOS technologies, making them highly attractive for next-generation spintronic applications. At Q-SPIN, we explore SHNOs as building blocks for advanced wireless communication systems, neuromorphic computing architectures, and on-chip microwave signal processing. Our research combines material growth, nanofabrication, and high-frequency characterization to push the performance limits of these devices. We are particularly interested in the collective dynamics of SHNO arrays, phase locking, and their use as artificial neurons in brain-inspired computing. We welcome motivated PhD students and postdoctoral researchers to join our efforts in developing SHNO-based technologies that bridge fundamental physics and real-world applications.

3. ACS Nano, (2025); 10.1021/acsnano.5c02048

4. Adv. Mater. 36, 2305002 (2024).

Appl. Phys. Lett. 112, 052403 (2018)

References:

Nature 573, 390–393 (2019).
npj Unconv. Comput. 1, 3 (2024).
Nature Mater 9, 721–724 (2010).

Magnetic Tunnel Junctions for Stochastic computing hardware

Magnetic Tunnel Junctions (MTJs), with their inherent non-volatility, fast switching, and probabilistic behavior under thermal fluctuations, offer a promising platform for hardware implementations of stochastic computing and magnetic memory applications. Our research spans growth of thin film stacking structures, nanofabrication, and experimental characterization, as well as the integration of MTJs into scalable logic circuits. By combining quantum materials with tailored magnetic properties and innovative circuit architectures, we aim to develop computing hardware that fundamentally departs from traditional deterministic paradigms. We are actively looking for PhD students and postdocs interested in working at the intersection of spintronics, probabilistic computing, and nanoscale hardware innovation.

4. Appl. Phys. Lett. 112, 052403 (2018).

5. Appl. Phys. Lett. 112, 062402 (2018).

6. Phys. Rev. Materials 3, 084403 (2019).

https://arxiv.org/abs/2308.13408v2

References:

Nat Commun 15, 4649 (2024).
Nature 563, 47–52 (2018).

Growth of 2D van der Waals based heterostructures

We grow and engineer 2D van der Waals heterostructures to enable novel spintronic functionalities at the atomic scale. By combining magnetic, semiconducting, and topological 2D materials, we aim to realize interface-driven phenomena such as spin filtering, proximity-induced magnetism, and gate-tunable spin transport. Our work lays the materials foundation for low-power, scalable spintronic devices with enhanced performance and new capabilities.

3. ACS Nano 18, 7, 5240–5248 (2024).

4. Nature Reviews Physics 4, 150–166 (2022).

Nat Rev Mater (2025). https://doi.org/10.1038/s41578-025-00779-1

Altermagnets for ultrafast spiontronic applications

Altermagnets—materials with zero net magnetization but strong spin polarization—offer a new pathway for ultrafast and robust spintronic devices. At Q-SPIN, we explore alternagnets as active layers for generating and controlling spin currents at terahertz speeds, without stray fields. Their unique symmetry properties make them ideal for next-generation memory, logic, and spin-orbit torque devices.

References:

Nat Rev Mater (2025). https://doi.org/10.1038/s41578-025-00779-1
Adv. Funct. Mater. 32, 2111693 (2022).

Phys. Rev. B 92, 045201 (2015)

Development of multifunctional Heusler alloy thin films and devices

We are advancing the development of Heusler alloy thin films with high spin polarization and low damping for next-generation spintronic devices. These materials enable efficient spin transport and switching, critical for applications like magnetic tunnel junctions, spin valves, and STT-MRAM. Our research focuses on optimizing film quality, interface engineering, and integration with semiconductor platforms for scalable, high-performance spintronic technologies.

References:

Appl. Phys. Rev. 3, 031101 (2016).
Phys. Rev. B 91, 104408 (2015).

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