Journal Publications:
1. “Ultrasensitive Nanoscale Magnetic-Field Sensors Based on Resonant Spin Filtering”, Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan IEEE Trans. Electron Devices 63, 4527 (2016).
2. “Resonant spin transfer torque nano-oscillators”, Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan Phys. Rev. Applied 8, 064014 (2017).
3. “Role of phase breaking processes on resonant spin transfer torque nano-oscillators”, Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan AIP Advances 8, 055913 (2018).
4. “Band-pass Fabry–Pérot magnetic tunnel junctions”, Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan Appl. Phys. Lett. 112, 192404 (2018).
5. “Superior Thermoelectric Design via Antireflection Enabled Lineshape Engineering”, Swarnadip Mukherjee, Pankaj Priyadarshi, Abhishek Sharma, Bhaskaran Muralidharan IEEE Trans. Electron Devices 65, 1896 (2018).
6. “Superlattice design for optimal thermoelectric generator performance”, Pankaj Priyadarshi, Abhishek Sharma, Swarnadip Mukherjee, Bhaskaran Muralidharan Journal of Physics D: Applied Physics 51, 185301 (2018).
7. “Piezoresistance in ballistic graphene” Abhinaba Sinha, Abhishek Sharma, Ashwin Tulapurkar, V Ramgopal Rao, and Bhaskaran Muralidharan Phys. Rev. Materials 3, 124005 (2019).
8. “Enhancement of Thermal Spin Transfer Torque via Bandpass Energy Filtering”, Pankaj Priyadarshi, Abhishek Sharma, Bhaskaran Muralidharan IEEE Transactions on Nanotechnology, 19, 469-474, (2020).
9. “Graphene as a nanoelectromechanical reference piezoresistor”, Abhinaba Sinha, Abhishek Sharma, Ashwin Tulapurkar”, Pankaj Priyadarshi, and Bhaskaran Muralidharan Phys. Rev. Research 2, 043041 (2020).
10. “Proposal for energy efficient spin transfer torque-magnetoresistive random access memory device”, Abhishek Sharma, Ashwin Tulapurkar, and Bhaskaran Muralidharan J. Appl. Phys. 129, 233901 (2021).
11. “Non-uniform Superlattice Magnetic Tunnel Junctions,” Sabarna Chakarbarti and Abhishek Sharma Nanotechnology, 2023.
12. “Orthogonal spin current injected magnetic tunnel junction for Neuromorphic computing,” Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma, (Accepted in IEEE Trans. Electron Devices (2023)) https://arxiv.org/abs/2207.14603
13. "Power efficient ReLU design for neuromorphic computing using spin Hall effect" Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma, (Accepted in Journal of Physics D: Applied Physics (2023))
Conferences:
1. “Spin transfer torque random access memories based on band-pass Fabry-Pèrot physics” Abhishek Sharma; Ashwin Tulapurkar; Bhaskaran Muralidharan, JOINT MMM-INTERMAG, in Washington, DC, January 2019.
2. “Electronic analogs of optical phenomena for spintronic information processing” Abhishek Sharma; Ashwin Tulapurkar; Bhaskaran Muralidharan, JOINT MMM-INTERMAG, in Washington, DC, January 2019.
3. “High performance spin transfer torque nano-oscillators based on double barrier tunneling” Abhishek Sharma; Ashwin Tulapurkar; Bhaskaran Muralidharan, Magnetism and Magnetic Materials (MMM-2017) in Pittsburgh, Pennsylvania, USA.
4. “Proposal for Fabry-Perot magnetic tunnel junctions” Abhishek Sharma; Ashwin Tulapurkar; Bhaskaran Muralidharan, IEEE International Electron Devices Meeting (IEDM-2017), USA.
5. “Band-pass spin filtering: A new direction for spintronics devices” Abhishek Sharma; Ashwin Tulapurkar; Bhaskaran Muralidharan, International symposium on integrated functionalities (ISIF-2017), New Delhi, India.
6. “Nanoscale Magneto-Resistance Sensors with Improved Sensitivity using Resonant Tunneling Magnetic Tunnel Junctions”, Niladri Chatterji; Abhishek Sharma; Ashwin Tulapurkar; Bhaskaran Muralidharan, International Conference on Solid State Devices and Materials (SSDM-2015) in Sapporo, Japan.
7. “Pre-deposition and thermal diffusion of Cr for GaCrN dilute magnetic semiconductor”, Abhishek Sharma, D. Banerjee, A. Diwan, and D. Saha, Fourth International Conference on Multifunctional, Hybrid and Nanomaterials, Sitges, Barcelona, Spain, Mar 9-13 2015.