The Moore era utilized only the charge degree of freedom of electrons for device and circuit design. Our interests involve the design and simulations of nanoelectronic devices and circuits that employ more than one degree of freedom of electrons (charge, spin, and energy) for the upcoming "Beyond Moore" era.

Our work is based on Boltzmann transport, non-equilibrium Green's function (NEGF), and micromagnetic simulations to address a diverse class of device and circuit design problems encompassing Spintronics devices, Thermoelectric devices, Magnetic Skyrmion devices, Topological Quantum computing devices, Neuromorphic computing devices and circuits, etc.