Conferences and Presentations

Presentations: 

28 March 2023: Presented an oral presentation on Band structure based electrostatics calculation in UTB MOS devices in the 1st edition of the EECS Research Symposium IISER Bhopal.

14 October 2022:  Presented a Poster on Confinement Effect and Conduction Band Offset in DG-SOI MOSFETs: A Simulation Study in the 45th edition of the annual conference – CAS 2022, organised by the IEEE at Poiana Brasov, Romania.

12 October 2022:  Presented a Poster on Quantitative identification of significant k-points enabling accurate & computationally efficient UTB MOS device simulation in the 45th edition of the annual conference – CAS 2022, organised by the IEEE at Poiana Brasov, Romania.

15 September 2022:  Presented a Poster on Confinement Effect and Conduction Band Offset in DG-SOI MOSFETs: A Simulation Study on Engineer’s day 2022, organised by the Engineering Sciences, IISER Bhopal

7 July 2022: Presented a Poster on "Comparison of Different Approaches used for Estimation of Electrostatics in UTB devices" at the 22nd IEEE International Conference on Nanotechnology (IEEE-NANO 2022)

16 December 2021: Presented a Poster on "Modeling the effect of Quantum Confinement on the electrostatics on UTB Double Gate MOS devices" at the XXI International Workshop On Physics Of Semiconductor Devices


Attended Conferences/Workshops/Seminar:

12–14 October 2022:  45th edition of the annual conference – CAS 2022, organised by the IEEE at Poiana Brasov, Romania.

4–8 July 2022: The 22nd IEEE International Conference on Nanotechnology (IEEE-NANO 2022), organised by the IEEE at the Campus of Balearic Islands University (UIB) in Palma, the capital of Balearic Islands, Spain.

23–31 December 2021: International Symposium on History and Future of Transistors, organised by the IEEE Electron Device Society (EDS) Delhi Chapter, The National Academy of Sciences India (NASI)-Delhi Chapter and Deen Dayal Upadhyaya College.

14–17 December 2021: Webinar of various symposia in the field of device modelling in XXI International Workshop On Physics Of Semiconductor Devices.