Manuscript Published Online:

• 2024:Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs[Paper] 

Authors: Nalin Vilochan Mishra and Aditya Sankar Medury.

Journal: IEEE Journal of the Electron Devices Society

• 2024:Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices [Paper] 

Authors: Nalin Vilochan Mishra and Aditya Sankar Medury.

Journal: IEEE Transactions on Device and Materials Reliability

• 2023:Algorithm for Calibrating Effective Mass Parameters to consider Quantum Confinement Effects in Ultra-Thin-Body Devices for Various Temperatures[Paper] 

Authors: Nalin Vilochan Mishra, Harshit Kansal, Ravi Solanki, and Aditya Sankar Medury.

Journal: Springer Nature Journal of Electronic Material

• 2023:Band-structure based electrostatics model for ultra-thin-body double-gate silicon-on-insulator MOS devices[Paper] 

Authors: Nalin Vilochan Mishra, Harshit Kansal, Ravi Solanki, and Aditya Sankar Medury.

Journal: IOP Journal of Physics D: Applied Physics

• 2023: Impact of band Edge Energy on Interface Traps and Electrostatics of Ultra-Thin-body Silicon-On-Insulator devices.[Paper] 

Authors: Nalin Vilochan Mishra, and Aditya Sankar Medury.

Journal: AIP Journal of Applied Physics.

• 2022: Temperature dependent Band gap Correction model using tight-binding approach for UTB device simulations. [Paper] 

Authors: Nalin Vilochan Mishra, Ravi Solanki, Harshit Kansal and Aditya Sankar Medury.

Journal: IEEE Transactions on Nanotechnology. 

• 2021: Significant k-point selection scheme for computationally efficient band structure based UTB device simulations.  [Paper] 

Authors: Ravi Solanki, Nalin Vilochan Mishra and Aditya Sankar Medury.

Journal: Semiconductor Science and Technology, IOP Publishing.