Bio

2014  國立成功大學材料科學及工程博士

2009  國立成功大學材料科學及工程碩士

2007  國立成功大學材料科學及工程學士

2014 Ph. D., Department of materials science and engineering, NCKU

2009 M.S., Department of materials science and engineering, NCKU

2007 B.S., Department of materials science and engineering, NCKU

Dr. Chao-Hung Wang received his Ph. D. degree in Materials Science and Engineering from the National Cheng Kung University (NCKU) in 2014. Later, He joined the Emerging Central Lab. at Macronix Inc. as a R&D engineer to start resistive random access memory (ReRAM) research during the years of 2015-2019. After that, He acquired LEAP scholarship to U.C. Berkeley to develop 2D transition metal carbide electrode materials for renewable energy applications from 2019 to 2020. Meanwhile, He was also an advisor of ANAFLASH Inc., which is a startup dedicated to developing a low power, higher performance and high reliable NVM based neuromorphic processor, under Berkeley Science Fellow Program. Finished the LEAP program, He joined ATMD at TSMC as a R&D engineer, responsible for MEOL and BEOL interconnect metallization. Subsequently, Dr. Wang joined the Miin Wu School of Computing, NCKU as an Assistant Professor in August 2021. Dr. Wang's research interests include developing Brain-like computing using non-volatile memory, novel memory devices and cutting-edge emerging memory materials. He has published more than 20 SCI and conference papers (sum of the times cited: 478, h-index: 13), as well as issued more than 8 patents as inventor.