We are developing Kinetic Monte Carlo and Master equation based framework for simulating bipolar RRAM devices. The Kinetic Monte Carlo solver will be used for modelling the ion and ion-vacancy dynamics while the Master equation solver will be used to study the electron transport through the oxide.
We are developing a deep neural network based solver to calculate the carrier concentration. electrostatic potential, subband energies and wave functions in a double gate FET
As a part of this project we are developing an in-house Kubo-Greenwood based mobility solver for modelling Si-Ge based high hole mobility transistors. In this research special emphasis would be on the modelling of mobility at low temperatures.