Publications

Journals

2025:

• S. N. Dikshit, A. K. Shukla, S. Soni, H. Fulara and B. K. Kaushik, "Energy Efficient Ultra-Fast Optically Switched Fully Non-Volatile Magnetic Full Adder for Enhanced Side-Channel Attack Resilience," in IEEE Open Journal of Nanotechnology, doi: 10.1109/OJNANO.2025.3625815. (IF=1.9)

• S. N. Dikshit, A. Nisar, B. Dixit, B. Kaur, A. K. Shukla, A. Kumar, J. Chen, J.-P. Wang, H. Fulara, and B. K. Kaushik, "Optically Assisted Ultrafast Spintronics: A Review, in Physics Reports, vol. 1140, pp. 1-46,  Oct. 2025, doi: https://doi.org/10.1016/j.physrep.2025.07.002. (IF=29.5)

• S. Soni, H. Nehete, A. Monga, G. Verma, A. K. Shukla, and T. Pramanik, "Energy-Efficient DSHE-MRAM-Based In-Memory Computing for Image Segmentation," in APL Electronic Devices, vol. 1, no. 2, p. 026121, June 2025, doi: https://doi.org/10.1063/5.0271458. 

2023:

• A. K. Shukla, S. Soni, and B. K. Kaushik, “Novel Radiation Hardened DSOT-MRAM Read Peripheral Circuit with Reduced Sensitive Nodes,” in IEEE Transactions on Circuits and Systems II, Express Briefs, vol. 70, no. 11, pp. 4236-4240, Nov. 2023, doi: 10.1109/TCSII.2023.3284978. (IF=4.9)

• A. K. Shukla, S. Soni, and B. K. Kaushik, “High Radiation Tolerant SOT-MRAM Read Peripheral Circuit with Fast Data Recovery” in IOP Physica Scripta, vol. 98, no. 12, p. 125301, Nov. 2023, doi: 10.1088/1402-4896/ad032d. (IF=2.6)

2020:

• A. K. Shukla, A. Nandi, and S. Dasgupta, “Modeling Source/Drain Lateral Gaussian Doping Profile of DG-MOSFET Using Green’s Function Approach,” in Solid-State Electronics, vol. 171, p. 107866, 2020, doi: 10.1016/j.sse.2020.107866. (IF=1.4)

2024:

• R. K. Raj, R. S. Verma, S. Saini, M. Kumar, A. K. Shukla, and B. K. Kaushik, “Leaky-Integrate-Fire Neuron Based on Antiferromagnetic Skyrmion Under Strain Gradient,” in IEEE 24th International Conference on Nanotechnology (NANO), Spain, pp. 331-336, 2024, doi: 10.1109/NANO61778.2024.10628596.

• N. V. Naga Aravind, G. Verma, S. Soni, A. K. Shukla, A. Sehgal, S. Roy, and B. K. Kaushik, "Image Edge Extraction Using SOT-MRAM Based In-Memory Computing,' in IEEE Nanotechnology Materials and Devices Conference (NMDC), Salt Lake City, Utah, United States, pp. 197-202, 2024, doi: 10.1109/NMDC58214.2024.10894194.     

Book Chapter

2024:

• S. Yadav, M. Singh, T. Chaudhary, B. Raj, A. K. Shukla, and B. K. Kaushik, “GaAs Nanowire Field Effect Transistor,” in Integrated Devices for Artificial Intelligence and VLSI, pp.75-99, 2024, doi: 10.1002/9781394205158.ch4.