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Dr. Khoirom Johnson Singh
Dr. Khoirom Johnson Singh is currently an Assistant Professor in the Department of Electronics at Dhanamanjuri University (DMU), Manipur. His academic journey reflects a deep commitment to advancing the field of electronics and communication engineering, focusing particularly on emerging device technologies and ferroelectric applications. In addition to his academic position, Dr. Khoirom serves as a Review Editor for Nano- and Microelectronics at Frontiers in Electronics. He is also a frequent reviewer for prominent journals published by IEEE, Elsevier, and IOP and serves as a technical reviewer for numerous top-tier IEEE conferences.
Dr. Khoirom began his academic journey with a bachelor’s degree in Electronics and Communication Engineering from the National Institute of Technology (NIT) Manipur in 2016. During this time, he developed a passion for semiconductor devices and advanced electronics, which laid the foundation for his future research. He went on to earn his master’s degree in Electronics and Communication Engineering from the North Eastern Regional Institute of Science and Technology, Nirjuli, in 2018. His master's research focused on advanced CMOS analog circuit design, and his academic excellence earned him the prestigious Institute Gold Medal at both the undergraduate and postgraduate levels.
His passion for semiconductor devices and beyond-CMOS technologies led him to pursue a Ph.D. at the Indian Institute of Technology (IIT) Roorkee, which he completed in 2024. His doctoral research explored negative capacitance (NC) effects in ferroelectric materials and their application in energy-efficient integrated circuits (ICs). His work contributed to the development of high-speed and ultra-low-power transistor technologies using ferroelectric materials, such as hafnium zirconium oxide (HZO) and organic materials like P(VDF-TrFE). Dr. Khoirom’s research aimed to overcome the limitations posed by conventional CMOS technologies, addressing the challenge of reducing energy consumption in dense ICs. His work has led to multiple publications in high-impact journals and refereed conferences, with over 20 research papers to his credit.
In addition to his research contributions, Dr. Khoirom presented an invited talk at the prestigious IEEE Latin American Electron Devices Conference (LAEDC) in 2022, where he shared insights from his groundbreaking work on ferroelectric device design. His expertise extends to device-circuit co-design, where he explores the co-optimization of transistors and circuits for next-generation electronics. His work has a strong focus on practical, scalable solutions, making it highly relevant to the semiconductor industry.
Dr. Khoirom has held several notable positions throughout his career. From 2018 to 2019, he worked as an Assistant Professor (Contractual) in the Department of Electronics and Communication Engineering at NIT Nagaland, where he contributed to both teaching and research. His dedication to teaching and mentorship has made him an influential figure in nurturing the next generation of engineers.
Dr. Khoirom’s academic achievements have been recognized through several awards, including the prestigious INSPIRE Fellowship from the Government of India, which supported his Ph.D. studies. His work continues to gain recognition in the academic and research communities (Best Thesis Award at VDAT 2024), and he remains actively involved in cutting-edge research in ferroelectric devices and beyond-CMOS technologies.
Education:
1. Ph.D. in Microelectronics & VLSI in the Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee (IITR), 2024.
Thesis Title: NEGATIVE CAPACITANCE EFFECTS IN MULTIDOMAIN FERROELECTRIC DEVICES FOR LOW VOLTAGE APPLICATIONS
2. M.Tech. in Electronics and Communication Engineering, North Eastern Regional Institute of Science and Technology (NERIST), Nirjuli, 2018.
3. B.Tech. in Electronics and Communication Engineering, National Institute of Technology Manipur (NITMN), 2016.
Professional Memberships:
1. IEEE Member
2. IEEE Young Professionals
3. IEEE Circuits and Systems Society Member
4. IEEE Communications Society Member
5. IEEE Electron Devices Society Member
6. IEEE Solid-State Circuits Society Member
Dr. Khoirom's work continues to push the boundaries of device innovation, and he remains committed to fostering collaboration and innovation in the field of nanoelectronics. His research interests are diverse and centered on cutting-edge innovations in electronics, including:
1. Ferroelectric devices (Capacitors and Transistors)
2. Negative capacitance effects
3. Landau transistor technology
4. Beyond-CMOS transistor technology
5. Compact modeling of emerging devices
6. Device-circuit co-design issues
7. Analog and digital circuit design
Collaborations
Whether in academia, industry, or beyond, I believe that meaningful collaborations lead to innovative solutions and groundbreaking discoveries.
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