The Ge2Se3 based optically gated transistor (OGT) was initially created for use as a selector device to reduce the sneak path current for resistive random-access memory (ReRAM), more specifically memristor devices in the basic crosspoint array structure. The transistor was designed with only two electrically connected terminals (the source and drain), and the gate was optically controlled, which allowed the transistor to operate only in the presence of light. 

Former PhD student, Faisal Kabir (PhD May 24), explored the operation of the OGT when the gate was doped with various elements, such as the group IV elements.

Faisal also investigated with operation of the OGT when the gate was doped with various metals, especially transition metals.  This work is currently submitted for publication.

Randall Bassine is investigating the capacitance of the OGT under the conditions of various dopants for his MS ECE research.