Peer-reviewed Articles

[97] “Area Selective Atomic Layer Deposition of SiO2 Thin Films using SAM inhibitors on ACL vs Si,” Seo-Hyun Lee, and Woo-Hee Kim,* to be submitted (2024).

[96] “Inherent Area-Selective Atomic Layer Deposition of HfO2 Thin Films,” Jeong-Min Lee, and Woo-Hee Kim,* to be submitted (2024).

[95] “Effects of  Er Doping on Structural and Electrical Properties of HfO2 Grown by Atomic Layer Deposition,” Il-Kwon Oh,†  Soo-Hwan Min,† Wontae Noh, Woo-Hee Kim,* and Hyungjun Kim* to be submitted (2024). 

[94] “Atomic Layer Deposition of high-k Oxide Thin Films,” Jeongbin Lee,† Jung Tae Kim,† and Woo-Hee Kim* to be submitted (2024).

[93] “Atomic Layer Etching of HfO2 Thin Film using Non-Fluorination Echants,” Jeongbin Lee,† Jung Tae Kim,† and Woo-Hee Kim* to be submitted (2024).

[92] "Thermal Atomic Layer Etching of Untrathin Ru Thin Films," Jeongbin Lee,† Jung Tae Kim,† and Woo-Hee Kim* to be submitted (2024).

[91] "Selectivity in Thermal Atomic Layer Etching of Oxidation State dependent Metal Oxides," Jeongbin Lee and Woo-Hee Kim* to be submitted (2024).

[90] "Growth Retardation of Atomic Layer Deposited HfO2 thin films using Surface Protector," Dong-Hyun Im, Yongju Kwon, Jinseon Lee  and Woo-Hee Kim,* to be submitted (2024).

[89] "Area Selective Atomic Layer Deposition of Nb2O5 for Improved interface quality between ZrO2 dielectric and Bottom TiN electrode ," Yongju Kwon, Dong-Hyun Im, Ji-Hoon Ahn,* and Woo-Hee Kim*, to be submitted (2024).

[88] “Low-resistivity molybdenum-carbide thin films formed by thermal atomic layer deposition with pressure-assisted decomposition reaction,” Min-Ji Ha, Na-Gyeong Kang, Woo-Hee Kim, Tae Joo Park, Tae-Eon Park, and Ji-Hoon Ahn*, submitted (2024).

[87] “High-temperature atomic layer deposition of HfO2 film with low impurity using a novel Hf precursor,” Jae Chan Park, Chang Ik Choi, Hongseok Jang, Suhyong Yun, Tran Thi Ngoc Van, Woo-Hee Kim, Ji-Hoon Ahn, Bonggeun Shong,* and Tae Joo Park*, submitted (2024).

[86] “Enhanced Deposition Selectivity of High-k Dielectrics by Vapor Dosing and Selective Removal of Phosphonic Acid Inhibitors,” Jeong-Min Lee, Seo-Hyun Lee, Ji Hun Lee, Junghun Kwak, Jinhee Lee, and Woo-Hee Kim*, in revision, ACS Applied Materials & Interfaces   (2024).

[85] “Area-Selective Atomic Layer Deposition of Ru Thin Films by Chemo-Selective Inhibition of Alkyl Aldehyde Molecules on Nitride Surfaces,” Jinseon Lee, Jieun Oh, Jiwon Kim, Hongjun Oh, Bonggeun Shong,* and Woo-Hee Kim*, Applied Surface Science, vol. 662, pp 160099-1-160099-6 (2024/07/30), ISSN=0169-4332. [Link]

[84] “Selective Nitride Passivation using Vapor-Dosed Aldehyde Inhibitors for Area-Selective Atomic Layer Deposition,” Haneul Park,† Jieun Oh,† Jeong-Min Lee, and Woo-Hee Kim*, Materials Letters,  Vol. 366, pp 136570-1-136570-4 (2024/07/01), ISSN=0167-577X. [Link]

[83] “Highly Area-Selective Atomic Layer Deposition of Device-Quality Hf1-xZrxO2 Thin Films through Catalytic Local Activation,” Hyo-Bae Kim,† Jeong-Min Lee,†Dougyong Sung, Ji-Hoon Ahn,* and Woo-Hee Kim*, Chemical Engineering Journal, vol. 488, pp 150760-1-150760-10 (2024/05/15), ISSN=1385-8947. [Link]

[82] “Atomic layer deposited RuO2 with controlled crystallinity and thickness for oxygen evolution reaction catalysis,” Jaehwan Lee, Sanghun Lee, Youngjun Kim, Yong Ju Kwon, Woo-Hee Kim, Seung-min Chung,* Donghyun Kim,* Hyungjun Kim,* Vacuum, vol. 220, pp 112843-1-112843-8 (2024/02/01), ISSN=0042-207X. [Link]

[81] “Chemical mechanism of oxidative etching of ruthenium: Insights into continuous versus self-limiting conditions,” Neung-Kyung Yu, Jeong-Min Lee, Woo-Hee Kim,* and Bonggeun Shong*, Applied Surface Science, vol. 636, pp 157864-1-157864-12 (2023/11/01), ISSN=0169-4332. [Link]

[80] "High-quality SiNx thin film growth at 300 ℃ using atomic layer deposition with hollow cathode plasma," Jae Chan Park, Dae Hyun Kim, Tae Jun Seok, Dae Woong Kim, Ji-Hoon Ahn, Woo-Hee Kim,* and Tae Joo Park*, Journal of Materials Chemistry C, vol. 11, issue 27, pp 9107-9113 (2023/07/21), ISSN=0897-4756. [Link]

[79] "Advanced Atomic Layer Deposition (ALD): Controlling Reaction Kinetics and Nucleation of Metal Thin Films Using Electric Potential Assisted ALD," Ji Won Han, Hyun Soo Jin, Yoon Jeong Kim, Ji Sun Heo, Woo-Hee Kim,* Ji-Hoon Ahn,* Tae Joo Park,* Journal of Materials Chemistry C, vol. 11, issue 11, pp 3743-3750 (2023/03/21), ISSN=0897-4756. [Link]

[78] “Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films ,” Yujin Lee,† Kangsik Kim,† Zonghoon Lee, Hong-Sub Lee, Han-Bo-Ram-Lee, Woo-Hee Kim,* Il-Kwon Oh,* and Hyungjun Kim*, Chemistry of Materials, vol. 35, issue 6, pp 2312-2320 (2023/03/16), ISSN=0897-4756. [Link]

[77] "Area-Selective Atomic Layer Deposition of High-Quality Ru Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents," Jeong-Min Lee, Seo-Hyun Lee, Jieun Oh, and Woo-Hee Kim,* Materials Letters, vol. 333, pp 133574-1-133574-4 (2023/02/15), ISSN=0167-577X. [Link]

[76] “Advanced Atomic Layer Deposition: Metal Oxide Thin Film Growth Using the Discrete Feeding Method,” Jae Chan Park, Chang Ik Choi, Sang-Gil Lee, Seung Jo Yoo, Ji-Hyun Lee, Jae Hyuck Jang Woo-Hee Kim, Ji-Hoon Ahn, Jeong Hwan Kim*and Tae Joo Park,* Journal of Materials Chemistry C, vol. 11, issue 4, pp 1298-1303 (2023/01/28), ISSN=2050-7526. [Link]

[75] "Area-Selective Atomic Layer Deposition of Ru Thin Films Using Phosphonic Acid Self-Assembled Monolayers for Metal/Dielectric Selectivity," Seo-Hyun Lee,† Jeong-Min Lee,† Ji Hun Lee, Junghun Kwak, Sung-Woong Chung,* and Woo-Hee Kim,* Materials Letters, vol. 328, pp 133187-1-133187-4 (2022/12/01), ISSN=0167-577X. [Link]

[74] "Rhenium Oxide/Sulfide Binary Phase Flakes Decorated on Nanofiber Support for Enhanced Activation of Electrochemical Conversion Reactions," Ga-Yoon Kim,† Jeongbin Lee,† YeoJin Rho, Woo-Hee Kim, MinJoong Kim, Ji-Hoon Ahn,* and Won-Hee Ryu,* Chemical Engineering Journal, vol. 446, Part 1, pp 136951-1-136951-9 (2022/10/15), ISSN=1385-8947. [Link]

[73] "Inhibitor-Free Area-Selective Atomic Layer Deposition of SiO2 through Chemoselective Adsorption of an Aminodisilane Precursor on Oxide versus Nitride Substrates,"  Jeong-Min Lee,† Jinseon Lee,† Hongjun Oh, Jiseong Kim, Bonggeun Shong,* Tae Joo Park,* and Woo-Hee Kim,* Applied Surface Science, vol. 589, pp 152939-1-152939-9 (2022/07/01), ISSN=0169-4332. [Link]

[72] "Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method," Ji Won Han, Hyun Soo Jin, Yoon Jeong Kim, Ji-Sun Heo, Woo-Hee Kim, Ji-Hoon Ahn, Jeong Hwan Kim,* and Tae Joo Park*, Nano Letters, vol. 22, issue 11, pp.4589-4595 (2022/06/08), ISSN=1530-6984. [Link]

[71] "Area-Selective Atomic Layer Deposition Using Vapor Dosing of Short-Chain Alkanethiol Inhibitors on Metal/Dielectric Surfaces," Jeongbin Lee, Jeong-Min Lee, Ji-Hoon Ahn, Tae Joo Park,* and Woo-Hee Kim,* Advanced Materials Interfaces, vol. 9, issue 13, pp.2102364 (2022/05/04), ISSN=2196-7350. [Link]

[70] "Ultra-low Resistivity Mo2C Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Novel Precursor," Min-Ji Ha, Hyunchang Kim, Jeong-Hun Choi, Miso Kim, Woo-Hee Kim, Tae Joo Park, Bonggeun Shong,* and Ji-Hoon Ahn,* Chemistry of Materials, vol. 34, no. 6, pp 2576-2584 (2022/03/22), ISSN=0897-4756. [Link].

[69] "A strategy for wafer-scale crystalline MoS2 thin films with controlled morphology using pulsed metal-organic chemical vapor deposition at low temperature" Jeong-Hun Choi, Min-Ji Ha, Jae Chan Park, Tae Joo Park, Woo-Hee Kim, Myoung-Jae Lee, and Ji-Hoon Ahn,* Advanced Materials Interfaces, vol. 9, issue 4, pp 2101785-1-2101785-11 (2022/02/03), ISSN=2196-7350. [Link]

[68] “Metal-insulator Transition and Interfacial Thermal Transport in Atomic Layer Deposited Ru Nanofilms Characterized by Ultrafast Terahertz Spectroscopy,” Hee Jun Shin,† Jeong-Min Lee,† Seongkwang Bae, Woo-Hee Kim,* and Sangwan Sim,* Applied Surface Science, vol. 563, pp 150184-1–150184-9 (2021/10/15), ISSN=0169-4332. [Link]

[67] “Inherently Area-Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide versus Nitride Selectivity,” Jinseon Lee,† Jeong-Min Lee,† Hongjun Oh, Changhan Kim, Jiseong Kim, Dae Hyun Kim, Bonggeun Shong*, Tae Joo Park*, and Woo-Hee Kim,* Advanced Functional Materials, vol. 31, issue 33, pp 2102556-1-2102556-10 (2021/08/16) ISSN=1616-301X. [Link]

[66] "Wafer Scale Growth of MoS2 Monolayer via One-Cycle of Atomic Layer Deposition: Adsorbate-Controlled Method," Dae Hyun Kim, Jae Chan Park, Jeongwoo Park, Deok-Yong Cho, Woo-Hee Kim, Bonggeun Shong,* Ji-Hoon Ahn,* and Tae Joo Park,* Chemistry of Materials, vol. 32, no. 11, pp 4099-4105 (2021/05/27), ISSN=0897-4756. [Link]

[65] “Enhanced Selectivity of Atomic Layer Deposited Ru Thin Films through the Discrete Feeding of Aminosilane Inhibitor Molecules ” Jeong-Min Lee, Jinseon Lee, Ji Won Han, Hwanyeol Park, SeJin Kyung, Il Woo Kim, Jong Myeong Lee, Tae Joo Park*, and Woo-Hee Kim*, Applied Surface Science, vol. 539, pp 148247-1–148247-7  (2021/02/15), ISSN=0169-4332. [Link]

[64] “Atomic Layer Deposition of Pt on the Surface Deactivated by Fluorocarbon Implantation: Investigation of Growth Mechanism,” Woo-Hee Kim,† Kihyun Shin,† Bonggeun Shong, Ludovic Godet, and Stacey F. Bent*, Chemistry of Materials , vol. 32, no. 22, pp 9696-9703 (2020/11/04), ISSN=0897-4756. [Link]

[62] “Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes,” Jae Hwan Lee, Bo-Eun Park, David Thompson, Myeonggi Choe, Zonghoon Lee, Il-Kwon Oh, Woo-Hee Kim (co-corresponding),* and Hyungjun Kim*, Thin Solid Films, vol. 701, pp 137950-1–137950-7 (2020/05/01), ISSN=0040-6090. [Link]

[61] “Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS2 by Atomic Layer Deposition,” Il-Kwon Oh,† Woo-Hee Kim,† Li Zeng, Bonggeun Shong, Joseph Singh, Jung-Gyu Song, Callisto MacIsaac, Hyungjun Kim, and Stacey F. Bent, contributed equally to this work (I.-K. Oh and W.-H. Kim), ACS Nano, vol. 14, no. 2, pp 1757-1769 (2020/01/22) ISSN= 1936-0851. [Link]

[60] “Synthesis of Two-Dimensional MoS2/Graphene Heterostructure by Atomic Layer Deposition Using MoF6 Precursor,” Daeguen Choi, Youngjun Kim, Whang Je Woo, Jae Bok Lee, Gyeong Hee Ryu, Jun Hyung Lim, Sunhee Lee, Zonghoon Lee, Seongil Im, Jong-Hyun Ahn, Woo-Hee Kim (co-corresponding),* Jusang Park, and Hyungjun Kim, Applied Surface Science, vol. 494, pp 591-599 (2019/11/15), ISSN=0169-4332. [Link]

[59] “Out-of-Plane Piezoresponse of Monolayer MoS2 on Plastic Substrates Enabled by Highly Uniform and Layer-Controllable CVD,” Jeongdae Seo, Youngjun Kim, Woon Yong Park, Jong Yeog Son, Chang Kyu Jeong,*  Hyungjun Kim,* and Woo-Hee Kim*, Applied Surface Science, vol. 487, pp 1356-1361 (2019/09/01), ISSN=0169-4332. [Link]

[58] “Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor,”  Yujin Lee, Chong Hwon Lee, Taewook Nam, Sanghun Lee, Il-Kwon Oh, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, Woo-Hee Kim (co-corresponding),* and Hyungjun Kim*, Journal of Materials Science, vol. 54, no. 16, pp 11145-11156 (2019/08/30), ISSN=0022-2461. [Link]

[57] “Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °C Using an Aminodisilane Precursor,” Dae Hyun Kim, Han Jin Lee, Yoonjung Choi, Bonggeun Shong,* Woo-Hee Kim (co-corresponding),* and Tae Joo Park*, Chemistry of Materials, vol. 31, pp 5502-5508 (2019/08/13), ISSN=0897-4756. [Link]

[56] “Phase-Controlled Synthesis of SnOx Thin Films by Atomic Layer Deposition and Post-Treatment,” Bo-Eun Park, Jaehong Park, Sangyoon Lee, Sanghun Lee, Woo-Hee Kim (co-corresponding),* and Hyungjun Kim*, vol. 30, pp 472–477 (2019/06/30), Applied Surface Science, ISSN=0169-4332. [Link]

[55] “Analysis of Defect Recovery in Reduced Graphene Oxide and Its Application as a Heater for Self-Healing Polymer,” Hyun Gu Kim, Il-Kwon Oh, Seungmin Lee, Sera Jeon, Hyungyong Choi, Kwanpyo Kim, Joo Ho Yang, Jae Woo Chung, Jaekwang Lee, Woo-Hee Kim (co-corresponding),* and Han-Bo-Ram Lee, ACS Applied Materials & Interfaces, vol. 11, no. 18, pp 16804–16814 (2019/05/08), ISSN=1944-8244. [Link] 

[54] “Structural and Ferroelectric Properties of P(VDF-TrFE) Thin Films Depending on The Annealing Temperature,” Jeongdae Seo, Jong Yeog Son, and Woo-Hee Kim,* Materials Letters, vol. 238, pp 294–297 (2019/03/01), ISSN=0167-577X / IF=2.687. [Link] 

[53] “Piezoelectric and Ferroelectric Characteristics of P(VDF-TrFE) Thin Films on Pt and ITO Substrates,” Jeongdae Seo, Jong Yeog Son, and Woo-Hee Kim,* Materials Letters, vol. 238, pp 237–240 (2019/03/01), ISSN=0167-577X / IF=2.687. [Link]

[52] “Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films” Hanearl Jung, Il-Kwon Oh, Chang Mo Yoon, Bo-Eun Park, Sanghun Lee, Ohyung Kwon, Woo Jae Lee, Se-Hun Kwon, Woo-Hee Kim (co-corresponding),* Hyungjun Kim,* ACS Applied Materials & Interfaces, vol. 10, pp 40286–40293 (2018/10/25), ISSN=1944-8244 / IF=8.097. [Link]

[51] “Area-Selective Atomic Layer Deposition using Si Precursors as Inhibitors,” Rizwan Khan, Bonggeun Shong*, Byeong Guk Ko, Jae Kwang Lee, Hyunsoo Lee, Jeong Young Park, Il-Kwon Oh, Shimelis Shumi Raya, Hyun Min Hong, Kwun-Bum Chung, Erik J. Luber, Yoon-Seok Kim, Chul-Ho Lee, Woo-Hee Kim (co-corresponding),* and Han-Bo-Ram Lee*, Chemistry of Materials, vol. 30, pp 7603–7610 (2018/10/11), ISSN=0897-4756 / IF=9.890. [Link]

[50] “Effects of Nb nanopin electrode on resistive random-access memory switching characteristics of NiO thin films,” Yoonho Ahn, Hyun Wook Shin, Taehoon Lee, Woo-Hee Kim (co-corresponding),* and Jong Yeog Son*, Nanoscale, vol. 10, pp 13443–13448 (2018/07/28), ISSN=2040-3372 / IF=7.233. [Link]

[49] “Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-Layer-Deposited HfO2 Films obtained from Metal Halide and Amide Precursors,” Il-Kwon Oh, Bo-Eun Park, Seunggi Seo, Byung Chul Yeo, Jukka Tanskanen, Han-Bo-Ram Lee, Woo-Hee Kim (co-corresponding),* and Hyungjun Kim,* Journal of Materials Chemistry C, vol. 6, pp 7367–7376 (2018/07/21), ISSN=2050-7526 / IF=5.976. [Link]

[48] “Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation,” Joseph A. Singh, Nick F.W. Thissen, Woo-Hee Kim, Hannah Johnson, Wilhelmus M.M. Kessels, Ageeth. Bol, Stacey F. Bent, Adriaan J.M. Mackus, Chemistry of Materials, vol. 30, no. 3, pp 663–670 (2018/02/13), ISSN=0897-4756 / IF=9.890. [Link]

[47] “Thermal Adsorption-Enhanced Atomic Layer Etching of Si3N4,” Woo-Hee Kim, Dougyong Sung, Sejin Oh, Jehun Woo, Seungkyu Lim, Hyunju Lee and Stacey F. Bent, Journal of Vacuum Science & Technology B, vol. 36, no. 1, pp. 01B104-1–01B104-7 (2018/01/01), ISSN=1071-1023 / IF=1.314. [Link]

[46] “Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone,” Hanearl Jung,† Woo-Hee Kim,† Bo-Eun Park, Whang Je Woo, Il-Kwon Oh, Su Jeong Lee, Yun Cheol Kim, Jae-Min Myoung, Satoko Gatineau, Christian Dussarrat, Hyungjun Kim, contributed equally to this work (H. Jung and W.-H. Kim), ACS Applied Materials & Interfaces, vol. 10, no. 2, pp 2143–2150 (2017/12/26), ISSN=1944-8244 / IF= 8.097. [Link]

[45] “Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns,” Seunggi Seo, Il-Kwon Oh, Byung Chul Yeo, Sang Soo Han, Chang Mo Yoon, Joon Young Yang, Jonggeun Yoon, Choongkeun Yoo, Ho-jin Kim, Yong-baek Lee, Su Jeong Lee, Jae-Min Myoung, Han-Bo-Ram Lee, Woo-Hee Kim, Hyungjun Kim, ACS Applied Materials & Interfaces, vol. 9, no. 47, pp 41607–41617 (2017/11/07), ISSN=1944-8244 / IF=8.097. [Link]

[44] “Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide,” Adriaan J.M. Mackus, Callisto MacIsaac, Woo-Hee Kim, Stacey F. Bent, Journal of Chemical Physics, vol. 146, no. 5, pp. 052802-1–052802-11 (02/07/2017) ISSN=0021-9606 / IF= 2.843. [Link]

[43] “Uniform Color Coating of Multilayered TiO2/Al2O3 Films by Atomic Layer Deposition,” Woo-Hee Kim, Hyungjun Kim, and Han-Bo-Ram Lee, Journal of Coatings Technology and Research, vol. 14, no. 1, pp. 177–183 (01/2017) ISSN=1547-0091 / IF=1.619.[Link]

[42] “A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation,” Woo-Hee Kim, Fatemeh Sadat Minaye Hashemi, Adriaan J. M. Mackus, Joseph Singh, Yeongin Kim, Dara Bobb-Semple, Yin Fan, Tobin Kaufman-Osborn, Ludovic Godet, and Stacey F. Bent, ACS Nano, vol. 10, no. 4, pp. 4451–4458 (04/26/2016) ISSN=1936-0851 / IF=13.709. [Link]

[41] “Local Ferroelectric Responses of Epitaxial PbTiO3 Thin Films to Heated Atomic Force Microscopy,” Jeongdae Seo, Yoonho Ahn, Woo-Hee Kim,* and Jong Yeog Son*, Materials Letters, co-corresponding authors (W.-H. Kim and J. Y. Son), vol. 168, pp. 134–137 (04/01/2016) ISSN=0167-577X / IF=2.687. [Link]

[40] “Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor,” Hanearl Jung†, Woo-Hee Kim,† Il-Kwon Oh, Chang-Wan Lee, Clement Lansalot-Matras, Su Jeong Lee, Jae-Min Myoung, Han-Bo-Ram Lee and Hyungjun Kim, Journal of Materials Science, contributed equally to this work (H. Jung and W.-H. Kim), vol. 51, no. 11, pp. 5082–5091 (02/22/2016) ISSN=0022-2461 / IF=2.993. [Link]

[39] “In Situ Surface Cleaning on a Ge Substrate using TMA and MgCp2 for HfO2-based Gate Oxides,” Il-Kwon Oh, Kangsik Kim, Zonghoon Lee, Jeong-Gyu Song, Chang-Wan Lee, David Thompson, Han-Bo-Ram Lee, Woo-Hee Kim, Wan Joo Maeng and Hyungjun Kim, Journal of Materials Chemistry C, vol. 3, no. 19, pp. 4852–4858 (05/21/2015) ISSN=2050-7526 / IF=5.976. [Link]

[38] “Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers,” Woo-Hee Kim, Jong Yeog Son, Young-Han Shin, and Hyun Myung Jang, Chemistry of Materials, vol. 26, no. 24, pp. 6911–6914 (12/23/2014) ISSN=0897-4756 / IF=9.890. [Link]

[37] “Atomic Layer Deposition of CeO2/HfO2 gate dielectrics on Ge Substrate,” Wan Joo Maeng, Il-Kwon Oh, Woo-Hee Kim, Min-Kyu Kim, Chang-Wan Lee, Clement Lansalot-Matras, David Thompson, Schubert Chu, and Hyungjun Kim, Applied Surface Science, vol. 321, pp. 214–218 (12/01/2014) ISSN=0169-4332 / IF=4.439. [Link]

[36] “Nanoscale Resistive Switching Memory Device Composed of NiO Nanodot and Graphene Nanoribbon Nanogap Electrodes,” Woo-Hee Kim, Changsoo Park, and Jong Yeog Son, Carbon, vol. 79, pp. 388–392 (11/01/2014) ISSN=0008-6223 / IF=7.082. [Link]

[35] “Room temperature magnetoresistance of horizontally aligned Mn-doped ZnO nanowires on terrace edges,” Woo-Hee Kim and Jong Yeog Son, Materials Letters, vol. 133, pp. 101–104 (10/15/2014) ISSN=0167-577X / IF=2.687. [Link]

[34] “Atomic Layer Deposition of B2O3/SiO2 Thin Films and Application to an Efficient Diffusion Doping Process,” Woo-Hee Kim, Il-Kwon Oh, Min-Kyu Kim, Wan Joo Maeng, Chang-Wan Lee, Gyeongho Lee, Clement Lansalot-Matras, Wontae Noh, David Thompson, David Chu, and Hyungjun Kim, Journal of Materials Chemistry C, vol. 2, no. 29, pp. 5805–5811 (08/07/2014) ISSN=2050-7526 / IF=5.976. [Link]

[33] “Ferroelectric domain wall motion in epitaxial PbTiO3 and BiFeO3 thin films,” Woo-Hee Kim, Sung Min Yoon, and Jong Yeog Son, Materials Letters, vol. 124, pp. 47–49 (06/01/2014) ISSN=0167-577X / IF=2.687. [Link]

[32] “An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis,” Scott M. Geyer, Rungthiwa Methaapanon, Richard W. Johnson, Woo-Hee Kim, Douglas G. Van Campen, Apurva Metha, and Stacey F. Bent, Review of Scientific Instruments, vol. 85, no. 5, pp. 055116-1–055116-9 (05/29/2014) ISSN=0034-6748 / IF=1.428. [Link]

[31] “Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films,” Woo-Hee Kim, Jong Yeog Son, and Hyun Myung Jang, ACS Applied Materials & Interfaces, vol. 6, no. 9, pp. 6346–6350 (05/14/2014) ISSN=1944-8244 / IF=8.097. [Link]

[30] “Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography,” Woo-Hee Kim, and Jong-Yeog Son, Materials Letters, vol. 121, pp. 122–125 (04/15/2014) ISSN=0167-577X / IF=2.687. [Link]

[29] “Thickness and Post-annealing Effects of the Sputtered La-Capping Layer Inserted between the TiN Gate and Hf-Based Dielectrics,” Woo-Hee Kim, Nae-In Lee, Jong-Ho Lee, Kug-Hwan Kim, ACS Applied Materials & Interfaces, vol. 6, no. 7, pp. 5199–5205 (04/09/2014) ISSN=1944-8244 / IF=8.097. [Link]

[28] “Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition,” Woo-Hee Kim, Min-Kyu Kim, Il-kwon Oh, W. J. Maeng, Taehoon Cheon, Soo-Hyun Kim, Atif Noori, David Thompson, Schubert Chu, and Hyungjun Kim, Journal of the American Ceramic Society, vol. 97, no. 4, pp. 1164–1169 (04/01/2014) ISSN=0002-7820 / IF= 2.956. [Link]

[27] “Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric,” Jae-Seung Lee, Woo-Hee Kim, Il-Kwon Oh, Min-Kyu Kim, Gyeongho Lee, Chang-Wan Lee, Jusang Park, Clement Lansalot-Matras, Wontae Noh and Hyungjun Kim, Applied Surface Science, vol. 297, pp. 16–21 (04/01/2014) ISSN=0169-4332 / IF=4.439. [Link]

[26] “Variation in ferroelectric polarization direction of epitaxial (001) SrBi2Ta2O9 thin film induced by oxygen vacancy” Jong-Yeog Son, Wan Joo Maeng, and Woo-Hee Kim*, Ceramics International, vol. 40, no. 2, pp. 2741–2745 (03/31/2014) ISSN=0272-8842 / IF=3.057. [Link]

[25] “Triangular Ferroelectric Domains of Highly (111)-oriented NaNbO3 Thin Film on a Glass Substrate,” Woo-Hee Kim and Jong-Yeog Son, Electronic Materials Letters, vol. 10, no.1, pp. 107–110 (01/10/2014) ISSN=1738-8090 / IF=2.882. [Link]

[24] “The effects of La substitution on ferroelectric domain structure and multiferroic properties of epitaxially grown BiFeO3 thin films,” Woo-Hee Kim and Jong-Yeog Son, Applied Physics Letters, vol. 103, no.5, pp. 132907-1–132907-4 (09/24/2013) ISSN=0003-6951 / IF= 3.495. [Link]

[23] “Single-Layer MoS2 Field Effect Transistor with Epitaxially Grown SrTiO3 Gate Dielectric on Nb-doped SrTiO3 Substrate,” Woo-Hee Kim and Jong-Yeog Son, Bulletin of the Korean Chemical Society, vol. 34, no. 9, pp. 2563–2564 (09/20/2013) ISSN=0253-2964 / IF= 0.522. [Link]

[22] Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal capacitor applications,” Min-Kyu Kim, Woo-Hee Kim, Taeyoon Lee, and Hyungjun Kim, Thin Solid Films, vol. 542, pp. 71–75 (09/02/2013) ISSN=0040-6090 / IF= IF= 1.939 [Link]

[21] “BiFeO3 nanodots prepared via dip-pen lithography on Nb-doped SrTiO3 and highly ordered pyrolytic graphite Substrates,” Woo-Hee Kim and Jong Yeog Son, Applied Physics Letters, vol. 103, no. 5, pp. 052905-1–052905-4 (07/31/2013) ISSN=0003-6951 / IF= 3.495. [Link]

[20] “Electronic Structure of Cerium Oxide Gate Dielectric Grown by Plasma-Enhanced Atomic Layer Deposition,” Woo-Hee Kim, Min-Kyu Kim, W. J. Maeng, Julien Gatineau, and Hyungjun Kim, Journal of The Electrochemical Society, vol. 158, no. 10, pp. G217–G220 (10/01/2011) ISSN=0013-4651 / IF= 3.259. [Link]

[19] “Low-temperature Atomic Layer Deposition of TiO2, Al2O3 and ZnO Thin Films,” Taewook Nam, Jae-Min Kim, Min-Kyu Kim, Hyungjun Kim, and Woo-Hee Kim, Journal of The Korean Physical Society, vol. 59, no. 2, pp. 452–457 (08/12/2011) ISSN=0374-4884 / IF= 0.467. [Link]

[18] “Low Pressure Chemical Vapor Deposition of Aluminum-doped Zinc Oxide for Transparent Conducting Electrodes,” Woo-Hee Kim, W. J. Maeng, Min-Kyu Kim, and Hyungjun Kim, Journal of The Electrochemical Society, vol. 158, no. 8, D495–D499 (08/01/2011) ISSN=0013-4651 / IF= 3.259. [Link]

[17] “Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition,” Woo-Hee Kim, Min-Kyu Kim, W. J. Maeng, Julien Gatineau, Venkat Pallem, Christian Dussarrat, Atif Noori, David Thompson, Schubert Chu, and Hyungjun Kim, Journal of The Electrochemical Society, vol. 158, no. 8, pp. G169–G172 (08/01/2011) ISSN=0013-4651 / IF= 3.259. [Link]

[16] “Atomic Layer Deposition of Ni Thin Films and Application to Area Selective Deposition,” Woo-Hee Kim, Han-Bo-Ram Lee, Kwang Heo, Young Kuk Lee, Taek-Mo Chung, Chang Gyoun Kim, Seunghun Hong, Jong Heo, and Hyungjun Kim, Journal of The Electrochemical Society, vol. 158, pp. D1–D5 (01/01/2011) ISSN=0013-4651 / IF= 3.259. [Link]

[15] “Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition,” Woo-Hee Kim, W. J. Maeng, Kyeong-Ju Moon, Jae-Min Myoung, and Hyungjun Kim, Thin Solid Films, vol. 519, pp. 362–366 (10/29/2010) ISSN=0040-6090 / IF= 1.939. [Link]

[14] “Plasma-Enhanced Atomic Layer Deposition of Ni,” Han-Bo-Ram Lee, Sung-Hwan Bang, Woo-Hee Kim, Gil-He Gu, Young Kuk Lee, Taek-Mo Chung, Chang Gyoun Kim, Chan Gyung Park, and Hyungjun Kim, Japanese Journal of Applied Physics, vol. 49, pp. 05FA11-1–05FA11-4 (05/20/2010) ISSN=0021-4922 / IF= 1.452. [Link]

[13] “Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide,” W. J. Maeng, Woo-Hee Kim, and Hyungjun Kim, Journal of Applied Physics, vol. 107, pp. 074109-1–074109-5 (04/14/2010) ISSN=0021-8979 / IF= 2.176. [Link]

[12] “Flat band voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer,” W. J. Maeng, Woo-Hee Kim, Ja Hoon Koo, S.J. Lim, Chang-Soo Lee, Taeyoon Lee, and Hyungjun Kim, Applied Physics Letters, vol. 96, pp. 082905-1–082905-3 (02/24/2010) ISSN=0003-6951 / IF= 3.495. [Link]

[11] “Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt,” Han-Bo-Ram Lee, Woo-Hee Kim, Jeong Won Lee, Jaemin Kim, Inchan Hwang, and Hyungjun Kim, Journal of the Korean Physical Society, vol. 56, pp. 104–107 (01/15/2010) ISSN=0374-4884 / IF= 0.467. [Link]

[10] “Improved Electrical Properties by In Situ Nitrogen Incorporation during Atomic Layer Deposition of HfO2 on Ge substrate,” Woo-Hee Kim, Bumsoo Kim, and Hyungjun Kim, Journal of the Korean Vacuum Society, vol. 19, pp. 14–21 (01/04/2010) ISSN=1225-8822 / KCI IF= 0.21 in 2014. [Link]

[9] “High Quality Area-Selective Atomic Layer Deposition Co Using Ammonia Gas as a Reactant,” Han-Bo-Ram Lee, Woo-Hee Kim, Jeong Won Lee, Kwang Heo, In Chan Hwang, Yongjun Park, Seunghun Hong, and Hyungjun Kim, Journal of The Electrochemical Society, vol. 157, pp. D10–D15 (01/01/2010) ISSN=0013-4651 / IF= 3.259. [Link]

[8] “The Benefits of Atomic Layer Deposition in Non-semiconductor Applications; Producing Metallic Nanomaterials and Fabrication of Flexible Display,” Hyungjun Kim, Woo-Hee Kim, Han-Bo-Ram Lee, and S. J. Lim, ECS Transactions, vol. 25, pp. 101–111 (10/05/2009). [Link]

[7] “(International book chapter) Atomic layer deposition of metals for sub 45 nm Cu metallization,” Hyungjun Kim and Woo-Hee Kim, Chemical Mineralogy, Smelting and Metallization, Chapter 15, pp. 333–350 (2009, 3rd quarter). 

[6] “Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas,” Woo-Hee Kim, Sang-Joon Park, Do Young Kim and Hyungjun Kim, Journal of the Korean Physical Society, vol. 56, pp. 32–37 (07/15/2009) ISSN=0374-4884 / IF= 0.493. [Link]

[5] “Cobalt and nickel atomic layer depositions for contact applications,” Han-Bo-Ram Lee, Woo-Hee Kim, Yongjun Park, Sunggi Baek, and Hyungjun Kim, IEEE International Interconnect Technology Conference, pp. 157–158 (06/19/2009). [Link]

[4] "Interface roughness effect between gate oxide and metal gate on dielectric property,” Jong Yeog Son, W. J. Maeng, Woo-Hee Kim, Young-Han Shin, and Hyungjun Kim, Thin Solid Films, vol. 517, pp. 3892–3895 (05/29/2009) ISSN=0040-6090 / IF= 1.939. [Link]

[3] "Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen,” Sang-Joon Park, Woo-Hee Kim, W. J. Maeng, Y. S. Yang, C. G. Park, H. Kim, Kook-Nyung Lee, Suk-Won Jung, and W. K. Seong, Thin Solid Films, vol. 516, pp. 7345–7349 (09/01/2008) ISSN=0040-6090 / IF= 1.939. [Link]

[2] “Ru nanostructure fabrications using anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition,” Woo-Hee Kim, Sang-Joon Park, Jong-Yeog Son, and Hyungjun Kim, Nanotechnology, vol. 19, pp. 045302-1–045302-8 (01/30/2008) ISSN=0957-4484 / IF= 3.404. [Link]

[1] “Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode,” Sang-Joon Park, Woo-Hee Kim, Han-Bo-Ram Lee, W. J. Maeng, and H. Kim, Microelectronic Engineering, vol. 85, pp. 39–44 (01/01/2008) ISSN=0167-9317 / IF= 2.020. [Link]