Our lab focuses on ultrafast optoelectronics, and ultrafast light-matter interactions in advanced energy materials; probing carrier and quasi-particle dynamics using femtosecond imaging technique by combining time-resolved spectroscopy and microscopy ; and energy & charge transfer mechanisms at femtosecond timescale.

• Femtosecond carrier dynamics from UV to mid-IR range: Nonequilibrium optical and electrical transient phenomena in condensed matter and optoelectronic devices

• Quantum information

• Ultrafast magneto-optics in DC magnetic fields

• Phononics in graphene and related materials

• Exciton in 2D TMD materials

Methodologies

• Femtosecond transient absorption spectroscopy, measuring range from UV to mid IR range (Helios Fire, Ultrafast systems)

  • • Ti:sapphire amplifier with 1 kHz repetition rate, 25 fs pulse duration, and wavelength range from 190 nm to 15000 nm (Coherent)

    • Ti:sapphire oscillator with 80 MHz repetition rate, 14 fs pulse duration

• Transient absorption microscopy, measuring range from UV to VIS range (Ultrafast systems)

• Time-resolved photoluminescence (TRPL) from UV to NIR range (Hamamatzu)

• Photocurrent spectroscopy

• Time-resolved photocurrent measurement

• Micro-absorption measurement

• Micro-Photoluminescence

• Photoluminescence quantum yield measurement (PLQY)

All facilities can be operated at cryogenic temperatures (4-500K).