Professor
Hongil, Yoon (윤홍일)
Degree
• B.S., EECS, Univ. of California at Berkeley (5/1991)
• M.S.E., EECS, Univ. of Michigan at Ann Arbor (4/1993)
• Ph.D., EECS, Univ. of Michigan at Ann Arbor (5/1996)
Career
• Associate Professor, School of Electrical & Electronic Engineering, Yonsei University, Seoul, Korea (3/2005~present)
• Assistant Professor, School of Electrical & Electronic Engineering, Yonsei University, Seoul, Korea (3/2002~2/2005)
• Senior Manager, DRAM Design Team, Memory Product & Technology Development Division, Samsung Electronics (5/1996~2/2002)
Research Interests
• Low-voltage and low-power circuits and devices
• Next generation memory circuits and technologies
• Fault-tolerant system and design for testability
Achievements
• Takuo Sugano Outstanding Far-East Paper Award at International Solid-State Circuits Conference (2/2002)
Contact
The 3rd Engineering building C624, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, Republic of Korea.
Tel: 82-2-2123-5766, 7730(lab)
Email: hyoon@yonsei.ac.kr