Professor

Hongil, Yoon (윤홍일)

Degree

• B.S., EECS, Univ. of California at Berkeley (5/1991)

• M.S.E., EECS, Univ. of Michigan at Ann Arbor (4/1993)

• Ph.D., EECS, Univ. of Michigan at Ann Arbor (5/1996)


Career

• Associate Professor, School of Electrical & Electronic Engineering, Yonsei University, Seoul, Korea (3/2005~present) 

• Assistant Professor, School of Electrical & Electronic Engineering, Yonsei University, Seoul, Korea (3/2002~2/2005)

• Senior Manager, DRAM Design Team, Memory Product & Technology Development Division, Samsung Electronics (5/1996~2/2002)


Research Interests

• Low-voltage and low-power circuits and devices 

• Next generation memory circuits and technologies 

• Fault-tolerant system and design for testability


Achievements 

• Takuo Sugano Outstanding Far-East Paper Award at International Solid-State Circuits Conference (2/2002)

Contact

The 3rd Engineering building C624, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, Republic of Korea. 

Tel: 82-2-2123-5766, 7730(lab)

Email: hyoon@yonsei.ac.kr