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Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at 4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

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Diamond and/or carbon thin films are in the center of interest due to their variability and extraordinary combination of intrinsic properties. However, some applications require fabrication of films with tailored properties. Especially, fabrication of periodic structures is highly attractive due to their increased surface area. In this contribution we point out the key technological aspects for fabrication of micro- and nano-sized carbon-based structures. Three representative structures are presented: diamond nanorods, self-assembled templates and self-standing diamond membranes. We found that the diameter of diamond nanorods can be controlled in a broad range from 10 to 200 nm by the masking material (Au vs Ni) and its initial thickness (from few to tens of nanometers). The assembly of polystyrene microspheres in mono- or multi-layer with square or hexagonal periodicities was controlled by the spin-coating parameters. The diamond porous membrane was selectively grown on Si substrate with an interdigital or mesh like geometry. Advantages of each structure as well as the fabrication limitations are discussed more in detail and finally their representative applications are pointed out.

Amorphous carbon coatings have been used in surface treatments due to their high corrosion resistance in several corrosive environments, as well as due to the fact that they are electric conductors55 Falcade T, Shmitzhaus TE, dos Reis OG, Vargas ALM, Hbler R, Mller IL, et al. Electrodeposition of diamond-like carbon films on titanium alloy using organic liquids: Corrosion and wear resistance. Applied Surface Science. 2012; 263:18-24. 

 ,66 Lettington AH. Applications of Diamond-Like Carbon Thin Films. Philosophical Transactions: Physical Sciences and Engineering. 1664; 1993(342):287-296..

The chemical group methyl is better than ethyl because it provokes a faster growth of the film. Another important parameter is the dipole moment: the higher the dipole moment is, the easier it is to obtain C-C sp bonds. These bonds are favorable to make diamond like-carbon (DLC) films. Nowadays, the typical electrolytes used in the electrodeposition of carbon films are acetonitrile (CH3CN), DMF (HCON(CH3)2), nitromethane (CH3NO2), methanol (CH3OH), nitroethanol (CH3CH2OH) and ethanol (CH3CH2OH)1212 Yan XB, Xu T, Yang SR, Liu HW and Xue QJ. Characterization of hydrogenated diamond-like carbon films electrochemically deposited on a silicon substrate. Journal of Physics D: Applied Physics. 2004; 37(17):2416-2424. -3727/37/17/012.

 -3727/37/1... ,1616 Fu Q, Jiu JT, Cao CB, Wang H and Zhu HS. Electrodeposition of carbon films from various organic liquids. Surface and Coatings Technology. 2000; 124(2):196-200. -8972(99)00658-1.

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