The semiconductor industry has evolved in accordance with the Moore's Law, progressing from microelectronics in the 1980s to nanoelectronics in the early 2000s, eventually venturing into atomic-scale quantum technology. High accuracy requirements, a significant hurdle to scalability, need innovative solutions for new technologies due to ultra-small allowable size deviations. Conventional plasma-based technologies with energetic particles in defect engineering, etching, doping, and materials deposition processes add another challenge in minimizing unwanted damage in atomic scale regions. Implementing multi laser beams will provide etchants, dopants, and depositing radicals to the surface via photochemical dissociation of chemical agents, followed by the direct laser beam illumination that promotes the etching, doping, and recrystallization in chemical and thermal processes. The proposed multi-laser beam assisted chemical processes can be applied to various atomically thin materials systems and quantum computing applications.
Related Publications:
Y. Rho‡ and K. Lee‡ et al., 2022, Nature Electronics, 5, 505–510
Y. Rho, et al., 2019, ACS Applied Materials & Interfaces, 11 (42), 39385-39393
Y. Rho‡ and H.Kim‡ et al, 2022, Advanced Materials Interfaces, 9 (23), 2200634
M. Eliceiri‡, Y. Rho‡, et al, 2023, Journal of Vacuum Science and Technology A , 41, 2, 022602