Publications

Sungjin Kim, Jeong Woo Jeon, Byongwoo Park, Wonho Choi, Gwangsik Jeon, Sangmin Jeon, Junwoo Park, Woohyun Kim, Junyoung Lim, David Ahn, Chanyoung Yoo*, Cheol Seong Hwang* "Atomic Layer Deposition of High-Density GeSe Films for Stable Vertical Ovonic Threshold Switching and Selector-Only Memory" Chemistry of Materials (2026)

Huije Ryu, Jongwon Lee, Sangmin Jeon, Gwangsik Jeon, Yoonhoo Ha, Young Min Lee, Dongmin Kim, Hyun Mi Lee, Joung Eun Yoo, Eun-Kyu Lee, Eun-Hyoung Cho, Jaehyoung Lee, Yongjoon Shin, Chanyoung Yoo, Sungnam Lyu, Seunghun Lee, Sangjin Hyun, Yongsung Kim, Cheol Seong Hwang, Do-Sun Lee, Kyung-Eun Byun, Changhyun Kim "Atomic Layer Deposition of Epitaxial Semimetal Contacts for 2D Transistors" 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI)

Gwangsik Jeon, Sangmin Jeon, Seunghwan Lee, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Sungjin Kim, Chanyoung Yoo, Hyejin Jang, Cheol Seong Hwang "Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory" Advanced Materials, 38, e19924 (2026)

Mingu Kang, Joon-Kyu Han, Kichul Lee, Jaeseok Jeong, Chanyoung Yoo, Jeong Woo Jeon, Byongwoo Park, Wonho Choi, Junseong Ahn, Kuk-Jin Yoon, Cheol Seong Hwang, Inkyu Park, “Neuromorphic olfaction with ultralow-power gas sensors and ovonic threshold switch” Science Advances 11, eadv9222 (2025)

Hyeon Cho, Chanyoung Yoo*, Bonggeun Shong*, “Influence of Ge Precursors toward Atomic Layer Deposition of Germanium Tellurides: A DFT Study” Vacuum 235, 114142 (2025)

Gwangsik Jeon, Jeongwoo Jeon, Woohyun Kim, Daehyeon Kim, Wontae Noh, Wonho Choi, Byongwoo Park, Sangmin Jeon, Sungjin Kim, Chanyoung Yoo*, Cheol Seong Hwang*, “Low-temperature atomic layer deposition of metastable MnTe films for phase change memory devices” Journal of Materials Chemistry C, 13, 6762-6771 (2025)

Byongwoo Park, Jeong Woo Jeon, Woohyun Kim, Wonho Choi, Gwang Sik Jeon, Sangmin Jeon, Sungjin Kim, Chanyoung Yoo, Junyoung Lim, Yonghun Sung, David Ahn, Cheol Seong Hwang, “Atomic layer deposition of Sn-doped germanium diselenide for an As-free Ovonic threshold switch with low off-current” Dalton Transactions, 54, 492-502 (2025)

Qing Lin, Nathaniel Safron, Donglai Zhong, Goutham Arutchelvan, Carlo Gilardi, Chanyoung Yoo, Jonathan Hartanto, Balreen Saini, Sheng-Chih Lai, Gregory Pitner, Gary Chen, Marvin MF Chang, Yu-Ming Lin, Wilman Tsai, Paul C McIntyre, Iuliana P Radu, “Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability” 2024 IEEE International Electron Devices Meeting (IEDM)

Jae-Hwan Kim, Dohyoung Kim, Jeong-Won Cho, Heesu Hwang, Young-Soo Noh, Myeong-Ill Lee, Seung-Muk Bae, Taehoon Cheon, Youkeun Oh, Dokyun Kim, Chanyoung Yoo*, Seungho Park*, Jin-Ha Hwang*, “Structural control in atomic layer deposited hafnium oxide thin films through vertical cavity surface-emitting laser (VCSEL)-based ultra-rapid heating” Ceramics International, 50, 43819-43827 (2024) 

Chanyoung Yoo, Jonathan Hartanto, Balreen Saini, Wilman Tsai, Vivek Thampy, Somayeh Saadat Niavol, Andrew C Meng, Paul C McIntyre, “Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors” Nano Letters, 24, 19, 5737-5745 (2024)

Jeong Woo Jeon, Byongwoo Park, Yoon Ho Jang, Soo Hyung Lee, Sangmin Jeon, Janguk Han, Seung Kyu Ryoo, Kyung Do Kim, Sung Keun Shim, Sunwoo Cheong, Wonho Choi, Gwangsik Jeon, Sungjin Kim, Chanyoung Yoo, Joon-Kyu Han, Cheol Seong Hwang “Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks” ACS Applied Materials & Interfaces, 16, 12, 15032-15042 (2024)

Chanyoung Yoo,‡ Jeong Woo Jeon,‡ Byongwoo Park, Wonho Choi, Gwangsik Jeon, Sangmin Jeon, Sungjin Kim, Cheol Seong Hwang, “A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory” ACS Applied Electronic Materials, 5, 11, 5794-5808 (2023)

Fei Huang, Balreen Saini, Zhouchangwan Yu, Chanyoung Yoo, Vivek Thampy, Xiaoqing He, John D Baniecki, Wilman Tsai, Andrew C Meng, Paul C McIntyre, Simon Wong “ Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering” ACS Applied Materials & Interfaces, 15, 43, 50246-50253 (2023)

Chanyoung Yoo,‡ Wonho Choi,‡ Sangmin Jeon, Jeong Woo Jeon, Byongwoo Park, Gwangsik Jeon, In-Hwan Baek, Cheol Seong Hwang, “Top-to-bottom local epitaxial growth of two-dimensional antimony telluride film by atomic layer deposition using sacrificial germanium telluride” Chemistry of Materials, 35, 17, 7311-7321 (2023)

Wonho Choi, Gilseop Kim, Hyun Young Kim, Chanyoung Yoo, Jeong Woo Jeon, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Sukin Kang, Yonghee Lee, and Cheol Seong Hwang* “Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor” ACS Applied Electronic Materials, 5, 3, 1721-1729 (2023)

Sangmin Jeon, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Chanyoung Yoo* and Cheol Seong Hwang* “Enhanced pseudo-atomic layer deposition of antimony telluride thin films by co-injecting NH3 gas with both precursors” Journal of Materials Chemistry C, 11, 3726-2735 (2023)

Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, Yan Cheng, Gyuseung Han, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Woohyun Kim, Yonghui Zheng, Jongho Lee, Junku Ahn, Sunglae Cho, Scott B. Clendenning, Ilya V. Karpov, Yoon Kyung Lee, Jung-Hae Choi, and Cheol Seong Hwang, “Atomic layer deposition of Sb2Te3/GeTe superlattice film and its melt-quenching-free phase transition mechanism for phase-change memory” Advanced Materials, 34, 2207143 (2022)

Jeong Woo Jeon, Chanyoung Yoo, Woohyun Kim, Wonho Choi, Byongwoo Park, Yoon Kyeung Lee and Cheol Seong Hwang, “Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 coinjection” Dalton Transaction, 51, 594-601 (2022)

Bo Wen Wang, Jinwoo Choi, Hyoung Gyun Kim, Seung Dam Hyun, Chanyoung Yoo, Seungsoo Kim, Hoin Lee and Cheol Seong Hwang, “Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis(cyclopentadienyl)magnesium precursor” Journal of Materials Chemistry C, 9, 15359-15374 (2021)

Yoon Kyeung Lee, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon and Cheol Seong Hwang, “Atomic layer deposition of chalcogenides for next-generation phase change memory” Journal of Materials Chemistry C, 9, 3708-3725 (2021)

Yoon Kyeung Lee,‡ Eui-Sang Park,‡ Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Manick Ha, and Cheol Seong Hwang, “Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Co-injection” Crystal Growth & Design, 20, 7, 4649-4656 (2020)

Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Eui-Sang Park, Manick Ha, Yoon Kyeung Lee,* and Cheol Seong Hwang* “Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage” ACS Applied Materials & Interfaces, 12, 20, 23110-23118 (2020)

Woohyun Kim, Chanyoung Yoo, Eui-Sang Park, Manick Ha, Jeong Woo Jeon, Gil Seop Kim, Kyung Seok Woo, Yoon Kyeung Lee,* and Cheol Seong Hwang,* “Electroforming-free Bipolar Resistive Switching in GeSe Thin Films with a Ti-containing Electrode” ACS Applied Materials & Interfaces, 11, 42, 38910-38920 (2019)

Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, Jeong Woo Jeon, Taeyong Eom, Yoon Kyeung Lee,* and Cheol Seong Hwang,* “Atomic Layer Deposition of Nanocrystalline-as-Deposited (GeTe)x(Sb2Te3)1-x Films for Endurable Phase Change Memory” Chemistry of Materials, 31, 8752-8763 (2019)

Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, Jeong Woo Jeon, Yoon Kyeung Lee,* and Cheol Seong Hwang,* “Developing Precursor Chemistry for Atomic Layer Deposition of High Density, Conformal GeTe Films for Phase Change Memory” Chemistry of Materials, 31, 8663-8672 (2019)

Yoon Kyeung Lee, Jeong Woo Jeon, Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha and Cheol Seong Hwang, “Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals” Micromachines, 10, 306 (2019)

Seung Ik Oh, In Hyuk Im, Chanyoung Yoo, Sung Yeon Ryu, Yong Kim, Seok Choi, Taeyong Eom, Cheol Seong Hwang, and Byung Joon Choi, “Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory” Micromachines, 10, 281 (2019)

Young Hwan Lee, Seung Dam Hyun, Hae Jin Kim, Jun Shik Kim, Chanyoung Yoo, Taehwan Moon, Keum Do Kim, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Jangho Roh, Min Hyuk Park,* and Cheol Seong Hwang,* “Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films” Advanced Electronic Materials, 5, 1800436 (2019)

Woohyun Kim, Sijung Yoo, Chanyoung Yoo, Eui-Sang Park, Jeongwoo Jeon, Young Jae Kwon, Kyung Seok Woo, Han Joon Kim, Yoon Kyeung Lee,* and Cheol Seong Hwang,* “Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch” Nanotechnology, 29, 365202 (2018)

Sijung Yoo,‡ Chanyoung Yoo,‡ Eui-Sang Park, Woohyun Kim, Yoon Kyeung Lee,* and Cheol Seong Hwang*, “Chemical Interactions in Atomic Layer Deposition of Ge-Sb-Se-Te Films and Their Ovonic Threshold Switching Behavior” Journal of Materials Chemistry C, 6, 5025 (2018)

Taehong Gwon, Ahmed Yousef Mohamed, Chanyoung Yoo, Eui-sang Park, Sanggyun Kim, Sijung Yoo, Han-Koo Lee, Deok-Yong Cho,* and Cheol Seong Hwang*, “Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition” ACS Applied Materials & Interfaces, 9, 47, 41387-41396 (2017)

Taehong Gwon, Taeyong Eom, Sijung Yoo, Chanyoung Yoo, Eui-sang Park, Sanggyun Kim, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang, “Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms” Chemistry of Materials, 29, 19, 8065-8072 (2017)