Atomic Layer Deposition System I: ALD on porous support with a large surface area. 

Atomic Layer Deposition System II: ALD on a flat substrate such as Si wafers.

Atomic Layer Deposition System III: ALD system for in-situ analyses using FT-IR, QCM and QMS

Manual ALD System: ALD on porous support with a large surface area. In-situ monitoring of mass change during the ALD process.

Thermal Annealing System (MILA 5000): Annealing thin films for crystallization (max. temperature ~ 1200 oC).

Potentiostat/Galvanostat (BioLogic SP-150): Electrochemical analysis.

Spectroscopic Ellipsometer: Thickness, n, k, and bandgap measurements of thin films

Spectral range: 1.5 ~ 5 eV

Probe Station: Electrical measurement (IV or CV)

Semiconductor Parameter Analyzer : HP4145B

LCR Meter : HP4284A (20 Hz ~ 1 MHz)

Semiconductor Parameter Analyzer : HP4145B