ARON's Research

Research on electronic structure and E-k relation via Scanning Tunneling Microscopy (STM) focuses on mapping the electronic properties of materials at the atomic level. By using an extremely sharp tip, STM measures the tunneling current as the tip scans the surface of a sample, providing a detailed topographic map. This allows researchers to investigate the quantum coherence manipulation of nanoscale structures and control the spin states of individual atoms within nanostructures. Such studies enhance the understanding of quantum physics and aid in the development of quantum computing by exploring the potential of single atoms and molecules for computation.

Light-matter interaction and nanospectroscopy via Scanning Near-Field Optical Microscopy (SNOM) involve investigating how light interacts with materials at the nanoscale. SNOM employs a sharp probe to scan the surface of a sample, enabling the measurement of light with spatial resolution beyond the diffraction limit of light. This technique is essential for studying the optical properties of nanostructures, allowing researchers to detect and manipulate electric and magnetic fields at the subwavelength scale. SNOM is utilized in various applications, including the analysis of quantum dots, plasmonic materials, and complex biological samples, thereby enhancing our understanding of nanoscale light-matter interactions and facilitating advancements in nanophotonics and material science.

Thermal and plasma-assisted chemical vapor deposition (CVD) are two prominent methods for synthesizing nanomaterials. Thermal CVD relies on high temperatures to decompose precursor gases, forming a thin film on the substrate. This technique is widely used for growing carbon nanotubes and silicon-based materials, though it requires high temperatures and longer processing times. Plasma-enhanced CVD (PECVD), on the other hand, utilizes plasma to enhance the chemical reactions at lower temperatures, making it suitable for materials sensitive to high heat. PECVD is effective for producing high-quality graphene films and silicon-based thin films, offering advantages in microelectronics and large-scale material production.

Scanning Probe Microscopy (SPM) encompasses a variety of techniques used to characterize surfaces at the nanoscale by scanning a probe over the sample.

1. Electrostatic Force Microscopy (EFM): Measures the electrostatic forces between the tip and the sample surface to map electrical properties.

2. Kelvin Probe Force Microscopy (KPFM): Quantifies the local contact potential difference (CPD) between an AFM probe and the sample surface by detecting a capacitive electrostatic force, providing detailed surface potential information.

3. Scanning Capacitance Microscopy (SCM): Measures variations in capacitance, allowing for the analysis of dopant profiles in semiconductors.

4. Conductive Atomic Force Microscopy (cAFM): Utilizes a conductive probe to map the electrical conductivity of the sample surface.

5. Magnetic Force Microscopy (MFM): Detects magnetic forces between the probe and the sample to map magnetic structures.

6. Scanning Gate Microscopy (SGM): Investigates the electrical properties of nanostructures by varying the local potential via a biased probe.

These techniques provide invaluable insights into the material properties and electronic behaviors at the nanoscale, making them essential tools in nanotechnology research and development.