Publications

Journals:

  1. Y.-P. Chen, B. K. Mahajan, D. Varghese, S. Krishnan, V. Reddy, and M. A. Alam, “A Novel ‘Three-Point I-V Spectroscopy’ Deconvolves Region-Specific Degradations in LDMOS Transistors,” Appl. Phys. Lett. (Under review)

  2. Y. -P. Chen, B. K. Mahajan, and M. A. Alam, "An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling," IEEE Trans. Electron Devices, vol. x, no. x, 2021, doi: 10.1109/TED.2021.3084915.

  3. Y.-P. Chen, B. K. Mahajan, D. Varghese, S. Krishnan, V. Reddy, and M. A. Alam, “Super Single Pulse Charge Pumping Technique for Profiling Interfacial Defects,” IEEE Trans. Electron Devices, vol. 68, no. 2, pp. 726–732, 2021, doi: 10.1109/TED.2020.3046168.

  4. Y.-P. Chen, B. K. Mahajan, J. Noh, P. D. Ye, and M. A. Alam, “Electrothermal performance limit of β-Ga2O3 field-effect transistors,” Appl. Phys. Lett., vol. 115, no. 17, 2019, doi: 10.1063/1.5116828. (Editor’s Pick)

  5. M. A. Alam, B. K. Mahajan, Y.-P. Chen, W. Ahn, H. Jiang, and S. H. Shin, “A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review,” IEEE Trans. Electron Devices, vol. 66, no. 11, 2019, doi: 10.1109/TED.2019.2941445.

Conferences:

  1. M. A. Alam, B. K. Mahajan, and Y.-P. Chen, “Hot carrier Degradation in Classical and Emerging Logic and Power Electronic Devices: Rethinking Reliability for Next-Generation Electronics,” 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, doi: 10.1109/EDTM50988.2021.9421019.

  2. Y.-P. Chen, B. K. Mahajan, D. Varghese, S. Krishnan, V. Reddy, and M. A. Alam, “Quantifying Region-Specific Interface Defects in LDMOS leading to Hot Carrier Degradation Using a Novel Charge Pumping Technique,” IEEE International Reliability Physics Symposium (IRPS), 2021, doi: 10.1109/IRPS46558.2021.9405224.

  3. Y.-P. Chen, B. K. Mahajan, D. Varghese, S. Krishnan, V. Reddy, and M. A. Alam, “A Novel ‘I-V Spectroscopy’ Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors,” IEEE International Reliability Physics Symposium (IRPS), 2021, doi: 10.1109/IRPS45951.2020.9128965.

  4. W. Ahn, Y.-P. Chen, and M. A. Alam, “An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies,” IEEE International Reliability Physics Symposium (IRPS), 2019, doi: 10.1109/IRPS.2019.8720497.

  5. Y.-P. Chen, B. K. Mahajan, W. Ahn, N. Zagni, and M. A. Alam, “Design and Optimization of β-Ga2O3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective,” International Electron Devices Meeting (IEDM), 2019, doi: 10.1109/IEDM.2018.8614714.

  6. S. Shin, Y.-P. Chen, W. Ahn, H. Guo, B. Williams, J. West, T. Bonifield, D. Varghese, S. Krishnan, and M. A. Alam, “High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics,” IEEE International Reliability Physics Symposium (IRPS), 2018, doi: 10.1109/IRPS.2018.8353669.

  7. Y.-P. Chen, V. Su, M.-L. Lee, Y.-H. You, P.-H. Chen, R.-M. Lin, and C.-H. Kuan, “Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole,” in Nanotechnology VII, 2015 SPIE Microtechnologies, vol. 9519, p. 95190X.

  8. M.-L. Lee, C. Nien, H.-C. Lin, Y.-H. You, V.-C. Su, P.-H. Chen, H.-B. Yang, Y.-P. Chen, S.-H. Tsai, and C.-H. Kuan, “Short Circuit Current Improvement of Si HIT Solar Cell by Optimal and ‘Chess Board’ Like 1-D Light Trapping Periodical Grating Structure,” 2014 Conference on Lasers and Electro-Optics (CLEO).

  9. M.-L. Lee, Y.-H. You, C.-J. Hsieh, V.-C. Su, C. Nien, P.-H. Chen, H.-C. Lin, H.-B. Yang, Y.-P. Chen, S.-H. Tsai, and C.-H. Kuan, “Utilizing Two-Dimensional Photonic Crystals to Investigate the Correlation between the Air Duty Cycle and the Light Extraction Efficiency of InGaN-Based Light-Emitting Diodes,” 2014 Conference on Lasers and Electro-Optics (CLEO).

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