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S. Xie, B. D. Faeth, Y. Tang, L. Li, E. Gerber, C. T. Parzyck, D. Chowdhury, Y. Zhang, C. Jozwiak, A. Bostwick, E. Rotenberg, E. Kim, J. Shan, K. F. Mak, and K. M. Shen, “Strong interlayer interactions in bilayer and trilayer moiré superlattices.”
Science Advances, (in press)

S. Xie, L. Tu, Y. Han, L. Huang, K. Kang, K. U. Lao, P. Poddar, C. Park, D. A. Muller, R. A. DiStasio Jr., and J. Park, “Coherent, atomically-thin transition-metal dichalcogenide superlattices with engineered strain.”
Science, 359, 1131–1136 (2018)

K. Kang*, S. Xie*, L. Huang, Y. Han, P. Y. Huang, K. F. Mak, C.-J. Kim, D. A. Muller, and J. Park, “High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.”
Nature, 520, 656-660 (2015)

K. Kang*, K.-H. Lee*, Y. Han, H. Gao, S. Xie, D. A. Muller, and J. Park, “Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.”
Nature, 550, 229-233 (2017)

Y. Jiang, Z. Chen, Y. Han, P. Deb, H. Gao, S. Xie, J. Park, V. Elser, P. Purohit, M. W. Tate, S. Gruner, and D. A. Muller, “Deep sub-Ångstrom imaging of 2D materials with a high dynamic range detector.”
Nature, 559, 343-349 (2018)

H. S. Kum, H. Lee, S. Kim, S. Lindemann, W. Kong, K. Qiao, P. Chen, J. Irwin, J. H. Lee, S. Xie, S. Subramanian, J. Shim, S.-H. Bae, C. Choi, L. Ranno, S. Seo, S. Lee, J. Bauer, H. Li, K. Lee, J. Robinson, C. A. Ross, D. G. Schlom, M. S. Rzchowski, C.-B. Eom, and J. Kim, “Heterogeneous integration of single-crystalline complex-oxide membranes.”
Nature, 578, 75-81 (2020)

P. Poddar, A. J. Mannix, J. Suh, C. Park, F. Mujid, S. Xie, and J. Park, “Electronically non-perturbative laser patterning and process monitoring of two-dimensional materials.”
Nano Lett. 22, 726–732 (2022)

X. Zheng, D. Werder, J. Park, O. Kigner, S. Xie, and D. G. Schlom, “Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS₂ films.”
Appl. Phys. Lett. 118, 093103 (2021)

B. D. Faeth, S. Xie, S. Yang, J. K. Kawasaki, J. N. Nelson, S. Zhang, C. Parzyck, P. Mishra, C. Li, C. Jozwiak, A. Bostwick, E. Rotenberg, D. G. Schlom, and K. M. Shen, “Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO₃.”
Phys. Rev. Lett. 127, 16803 (2021).

H. Kim, K. Lu, Y. Liu, H. S. Kum, K. S. Kim, K. Qiao, S. H. Bae, S. Lee, Y. J. Ji, K. H. Kim, H. Paik, S. Xie, H. Shin, C. Choi, J. H. Lee, C. Dong, J. A. Robinson, J. H. Lee, J. H. Ahn, G. Y. Yeom, D. G. Schlom, and J. Kim, “Impact of 2D−3D Heterointerface on Remote Epitaxial Interaction through Graphene”
ACS Nano 15, 10587 (2021)

C. Herbig, C. Zhang, F. Mujid, S. Xie, Z. Pedramrazi, J. Park, and M. F. Crommie, “Local electronic properties of coherent single-layer WS2/WSe2 lateral heterostructures.”
Nano Lett. 21, 2363–2369 (2021)

H. Gao, J. Suh, M.C. Cao, A.Y. Joe, F. Mujid, K.-H. Lee, S. Xie, P. Poddar, J.-U. Lee, K. Kang, P. Kim, D. A. Muller, and J. Park, “Tuning electrical conductance of MoS₂ monolayers through substitutional doping.”
Nano Lett. 20, 4095–4101 (2020)

R. E. Wood, L. T. Lloyd, F. Mujid, L. Wang, M. A. Allodi, H. Gao, R. Mazuski, P.-C. Ting, S. Xie, J. Park, and G. S. Engel, “Evidence for the dominance of carrier-induced band gap renormalization over biexciton formation in cryogenic ultrafast experiments on MoS₂ monolayers.”
J. Phys. Chem. Lett. 11, 2658–2666 (2020)

P. Deb, M.C. Cao, Y. Han, M.E. Holtz, S. Xie, J. Park, R. Hovden, and D.A. Muller, “Imaging Polarity in Two Dimensional Materials by Breaking Friedel’s Law.”
Ultramicroscopy 215, 113019 (2020)

Y. Han, K. Nguyen, M. Cao, P. Cueval, S. Xie, M. W. Tate, P. Purohit, S. M. Gruner, J. Park, and D. A. Muller, “Strain mapping of two-dimensional heterostructures with sub-picometer precision.”
Nano Lett., 18, 3746-3751 (2018)

Y. Han, K. Nguyen, M. Cao, P. Cueva, M. W. Tate, P. Purohit, S. Xie, M.-Y. Li, L.-J. Li, J. Park, S. M. Gruner, and D. A. Muller, “Mapping strain and relaxation in 2D heterojunctions with sub-picometer precision.”
Microscopy and Microanalysis, 24, 1588 (2018)

Z. Chen, Y. Jiang, Y. Han, P. Deb, H. Gao, S. Xie, P. Purohit, M. W. Tate, J. Park, S. M. Gruner, V. Elser, and D. A. Muller, “Real-space demonstration of 0.4 ångstrom resolution at 80 keV via electron ptychography with a high dynamic range pixel array detector.”
Microscopy and Microanalysis, 24, 194 (2018)

A. Kerelsky, A. Nipane, D. Edelberg, D. Wang, X. Zhou, A. Dadgar, H. Gao, S. Xie, K. Kang, J. Park, J. Teherani, and A. Pasupathy, “Absence of a band gap at metal-monolayer MoS₂ interface.”
Nano Lett., 17, 5962-5968 (2017)

P. Deb, Y. Han, S. Xie, M. E. Holtz, J. Park, and D. A. Muller, “Breaking Friedel’s law in polar two-dimensional materials.”
Microscopy and Microanalysis, 23, 1738 (2017)

Y. Han, S. Xie, K. Nguyen, M. Cao, M. W. Tate, P. Purohit, S. M. Gruner, J. Park, and D. A. Muller, “Picometer-precision strain mapping of two-dimensional heterostructures using an electron microscope pixel array detector (EMPAD).”
Microscopy and Microanalysis, 23, 1712 (2017)

D. A. Muller, Y. Han, K. X. Nguyen, M. W. Tate, P. Purohit, S. Xie, J. Park, and S. M. Gruner, “Electron diffraction from a single atom and optimal signal detection.”
Microscopy and Microanalysis 22, 846 (2016)

M. H. D. Guimaraes, H. Gao, Y. Han, K. Kang, S. Xie, C.-J. Kim, D. A. Muller, D. C. Ralph, and J. Park, “Atomically-thin ohmic edge contacts between two-dimensional materials.”
ACS Nano, 10, 6392–6399 (2016)

X. Zhou, K. Kang, S. Xie, A. Dadgar, N. Monahan, X.-Y. Zhu, J. Park, and A. N. Pasupathy, “Atomic-scale spectroscopy of gated monolayer MoS₂.”
Nano Lett., 16, 3148-3154 (2016)

Patents

“Superlattice structure including two-dimensional material and device including the superlattice structure,” M. Lee, J. Park, S. Xie, J.Heo, and H. Shin, US Patent, US11189699B2

“Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same,” J. Park, K. Kang, and S. Xie, US Patent, US10325987B2

“Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same,” J. Park, H. Gao, M. H.D. Guimaraes, D. C. Ralph, K. Kang, and S. Xie, US Patent, US10910473B2

“Transition metal chalcogenide van der Waals films, methods of making same, and apparatuses and devices comprising same,” J. Park, K. Kang, H. Gao, S. Xie, and K.-H. Lee, US Patent, US11069822B2