In this work, we demonstrate the ability to engineer the interlayer electronic coupling in 2D van der Waals bilayers through control of interlayer distance, which is tuned by applying gigapascal compressive pressure. We quantitatively determine the exponential dependence of coupling parameter on the gap distance. Most significantly, we achieve a record-high K-valley coupling strength of over 100 meV, which is ~280% greater than the value at zero-pressure.
The key behind the powerful moiré designer is the ability to tailor the stacking configurations and therefore tune the interlayer electronic coupling to create novel 2D electronic structures. Here, through control of the twist angle, we demonstrate the ability to control the optical selection rule, manipulate interlayer electronic coupling and create novel excitonic states in TMD hetero- and homo-bilayers.
In this work, we measure the exciton binding energy of 2D materials such as WS2 and WSe2 using exciton Rydberg spectroscopy. We demonstrate the Coulomb engineering of exciton binding energy and quasiparticle bandgap by controlling the dielectric environment. Quantitatively, our results are in good agreement with the prediction of nonlocally-screened Keldysh potential.