WEIYI LI

Education：

2017- 2022 Ph.D in Dept. of Electrical and Computer Engineering, University of California, Santa Barbara

2014 -2017 MS in Microelectronics and Solid State Electronics, University of Chinese Academy of Science

2010 -2014 BS in Electrical Engineering, Zhejiang University

Exchange Experience: Hong Kong University, 2013

Relevant Experience

Staff Device Engineer 09/2022 to present

Western Digital, Milpitas California, USA

• Investigated and researched in 3D NAND

Research Assistant 09/2017 to 09/2022

Department of Electrical and Computer Engineering, University of California, Santa Barbara California, USA

• Investigated and researched in the GaN-based mm-wave power transistor

Graduate Course Reader 01/2019 to 04/2019

Department of Electrical and Computer Engineering, University of California, Santa Barbara California, USA

• ECE 221A: Semiconductor Device Physics I

Research Assistant 08/2015 to 07/2017

Chinese Academy of Science Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Suzhou, China

• Researched in the enhancement mode GaN HEMTs and improving GaN HEMT reliability

Research Internship 03/2015 to 07/2015

Chinese Academy of Sciences Institute of Computing Technology Beijing, China

• Investigated in IC architecture and machine learning algorithms

Reviewer of Journal: Solid States Electronics, Applied Physics Letters, IEEE Journal of the Electron Devices Society