WEIYI LI

Education：

2017- 2022  Ph.D in Dept. of Electrical and Computer Engineering, University of California, Santa Barbara

2014 -2017 MS in Microelectronics and Solid State Electronics, University of Chinese Academy of Science

2010 -2014 BS in Electrical Engineering,  Zhejiang University 

Exchange Experience: Hong Kong University, 2013

Relevant Experience

Analog Design Engineer                                                                                                                04/2024 to present
Texas Instruments                                                                                                                           Dallas, TX, USA

· Design, characterize, model and productize high power RF GaN-on-Si devices

Staff Device Engineer                                                                                                                                 09/2022 to 03/2024

Western Digital, Milpitas                                                                                                                                 California, USA

• Investigated and researched in 3D NAND 

Research Assistant                                                                                                                                    09/2017 to 09/2022

Department of Electrical and Computer Engineering, University of California, Santa Barbara                     California, USA

• Investigated and researched in the GaN-based mm-wave power transistor 

Graduate Course Reader                                                                                                                         01/2019 to 04/2019

Department of Electrical and Computer Engineering, University of California, Santa Barbara                     California, USA

• ECE 221A: Semiconductor Device Physics I

Research Assistant                                                                                                                           08/2015 to 07/2017

Chinese Academy of Science Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)                           Suzhou, China

• Researched in the enhancement mode GaN HEMTs and improving GaN HEMT reliability

Research Internship                                                                                                                      03/2015 to 07/2015

Chinese Academy of Sciences Institute of Computing Technology                                                                    Beijing, China

• Investigated in IC architecture and machine learning algorithms 

Reviewer of Journals: IEEE Electron Device Letters, IEEE Transaction on Electron Deivces, IEEE Microwave and Wireless Technology Letters, IEEE Journal of the Electron Devices Society, Applied Physics Letters, Semiconductor Science and Technology, Journal of Applied Science and Engineering, Journal of Physics D: Applied Physics, Physica Scripta, Solid States Electronics, Micromachines, Crystals