Publications

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1. Emerging quantum coherence and exceptionally large nonlinear carrier dynamics at van der Waals junctions

H. Wang, D. West, C. Lim, V. Meunier, and S. Zhang, submitted to Phys. Rev. Lett.

2. Understanding 2p core-level excitons of late transition metals by analysis of mixed-valence copper in a metal–organic framework

H. Wang, G. Su, B. Barnett, W. Drisdell, J. Long, and D. Prendergast, submitted to J. Am. Chem. Soc.

3. Backbonding contributions to small molecule chemisorption in a metal–organic framework with open copper(i) centers.

G. M. Su*, H. Wang*, B.R. Barnett, J.R. Long, D. Prendergast, and W. Drisdell, Chem. Sci. 12, 2156 (2021) (*) co-first authors

4. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

H. Wang, J. Bang, Y. Sun, L. Liang, D. West, V. Meunier, and S. Zhang, Nat. Commun. 7, 11504 (2016).

5. Ultrafast processes in photochromic material YHxOy studied by excited-state density functional theory simulation

J. Chai*, Z. Shao*, H. Wang*, C. Ming, W. Oh, T. Ye, Y. Zhang, X. Cao, P. Jin, S. Zhang, and Y.Y. Sun, Sci. China Mater 63, 1579 (2020). (*) co-first authors

6. A combined multi-reference pump-probe simulation method with application to XUV signatures of ultrafast methyl iodide photodissociation

H. Wang, M. Odelius, D. Prendergast, J. Chem. Phys. 151, 124106 (2019).

7. Revealing electronic state-switching at conical intersections in alkyl iodides by ultrafast XUV transient absorption spectroscopy

K. Chang, M. Reduzzi, H. Wang, S. Poullain, Y. Kobayashi, L. Barreau, D. Prendergast, D. Neumark, and S. Leone, Nat. Commun. 11, 4042 (2020)

8. Mapping wave packet bifurcation at a conical intersection in CH₃I by attosecond XUV transient absorption spectroscopy

K. Chang, H. Wang, S. M. Poullain, D. Prendergast, D. M. Neumark and S. R. Leone, J. Chem. Phys., 154, 234301 (2021)

9. Emergence of nontrivial low-energy Dirac fermions in antiferromagnetic EuCd₂As₂

J. Ma*, H. Wang*, S. Nie*, C. Yi, Y. Xu, H. Li, J. Jandke, W. Wulfhekel, Y. Huang, D. West, P. Richard, A. Chikina, V.N. Strocov, J. Mesot, H. Weng, S. Zhang, Y. Shi, T. Qian, M. Shi, and H. Ding, Adv. Mater. 32, 1907565 (2020). (*) co-first authors

10. Magnetic anisotropy of iridium dimer on two dimensional materials

M. Guo, X. Liang, H. Wang^†, and J. Zhang^†, Phys. Chem. Chem. Phys. 22, 238 (2020). (^†) corresponding authors

11. Probing ultrafast C–Br bond fission in the UV photochemistry of bromoform with core-to-valence transient absorption spectroscopy

B.W. Toulson, M. Borgwardt, H. Wang, F. Lackner, A.S. Chatterley, C.D. Pemmaraju, D.M. Neumark, S.R. Leone, D. Prendergast, and O. Gessner, Struct. Dyn. 6, 54304 (2019).

12. Interface depended electronic and magnetic properties of vertical CrI₃/WSe₂ heterostructures

M. Ge, Y. Su, H. Wang, G. Yang, and J. Zhang, RSC Adv. 9, 14766 (2019).

13. Carrier Dynamics and Transfer across the CdS/MoS₂ Interface upon Optical Excitation,

K. Cheng, H. Wang, J. Bang, D. West, J. Zhao and S. Zhang, J. Phys. Chem. Lett., 11, 6544 (2020)

14. Investigating EUV radiation chemistry with first principles quantum chemistry calculations

J. Ma, H. Wang, D. Prendergast, A. Neureuther, and P. Naulleau, Proc.SPIE 11147, (2019).

15. Semimetal or semiconductor: the nature of high intrinsic electrical conductivity in TiS₂

H. Wang, Z. Qiu, W. Xia, C. Ming, Y. Han, L. Cao, J. Lu, P. Zhang, S. Zhang, H. Xu, and Y.-Y. Sun, J. Phys. Chem. Lett. 10, 6996–7001 (2019).

16. Photoinduced vacancy ordering and phase transition in MoTe₂

C. Si, D. Choe, W. Xie, H. Wang, Z. Sun, J.Bang, and S. Zhang, Nano Lett. 19, 3612–3617 (2019).

17. Enhanced light emission from the ridge of two-dimensional InSe flakes

Y. Li*, T. Wang*, H. Wang*, Z. Li, Y. Chen, D. West, R. Sankar, R.Ulaganathan, F. Chou, C. Wetzel, C. Xu, S. Zhang, S. Shi, Nano Lett. 18, 5078 (2018). (*) co-first authors

18. Three-dimensional pentagon carbon with a genesis of emergent fermions

C. Zhong, Y. Chen, Z.-M. Yu, Y. Xie, H. Wang, S.A. Yang, and S. Zhang, Nat. Commun. 8, 15641 (2017).

19. Theoretical prediction of a graphene-like structure of indium nitride: A promising excellent material for optoelectronics

Q. Peng, X. Sun, H. Wang, Y. Yang, X. Wen, C. Huang, S. Liu, and S. De, Appl. Mater. Today 7, 169 (2017).

20. Stacking fault enriching the electronic and transport properties of few-layer phosphorenes and black phosphorus

S. Lei*, H. Wang*, L. Huang, Y.-Y. Sun, and S. Zhang, Nano Lett. 16, 1317 (2016). (*) co-first authors

21. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics

Y. Chen, Y.Y. Sun, H. Wang, D. West, Y. Xie, J. Zhong, V. Meunier, M.L. Cohen, and S.B. Zhang,

Phys. Rev. Lett. 113, 85501 (2014).

22. Native defects in second-generation topological insulators: effect of spin-orbit interaction on Bi₂Se₃

D. West, Y.Y. Sun, H. Wang, J. Bang, and S.B. Zhang, Phys. Rev. B 86, 121201(2012).