Full record is available on Google Scholar (including 2 in Nature Communications, 1 in Nano Letters, 1 in Physical Review Letters)
Manuscript in preparation:
1. First-principles study on the origin of high electrical conductivity of layered material TiS2
H. Wang, Y. Sun, S. Lei, and S. Zhang (manuscript in preparation)
2. Enhanced light emission from the ridge of two-dimensional InSe flakes
Y. Li, H. Wang, S. Shi, and S. Zhang (manuscript in preparation)
3. Correlation effect in Weyl semimetal candidate EuCd2As2
L. Rong*, H. Wang*, M. Radovic, Y. Shi, J. Ma, M. Shi, T. Qian, Y. Huang, H. Ding, R. Tai, S. Zhang (manuscript in preparation) (*) co-first authors
1. Three-dimensional pentagon carbon with a genesis of emergent fermions
C. Zhong, Y. Chen, Z.-M. Yu, Y. Xie, H. Wang, S.A. Yang, and S. Zhang, Nat. Commun. 8, 15641 (2017).
2. Theoretical prediction of a graphene-like structure of indium nitride: A promising excellent material for optoelectronics
Q. Peng, X. Sun, H. Wang, Y. Yang, X. Wen, C. Huang, S. Liu, and S. De, Appl. Mater. Today 7, 169 (2017)
3. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures
H. Wang, J. Bang, Y. Sun, L. Liang, D. West, V. Meunier, and S. Zhang, Nat. Commun. 7, 11504 (2016).
4. Stacking fault enriching the electronic and transport properties of few-layer phosphorenes and black phosphorus
S. Lei*, H. Wang*, L. Huang, Y.-Y. Sun, and S. Zhang, Nano Lett. 16, 1317 (2016). (*) co-first authors
5. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics
Y. Chen, Y.Y. Sun, H. Wang, D. West, Y. Xie, J. Zhong, V. Meunier, M.L. Cohen, and S.B. Zhang, Phys. Rev. Lett. 113, 85501 (2014).
6. Native defects in second-generation topological insulators: effect of spin-orbit interaction on Bi2Se3
D. West, Y.Y. Sun, H. Wang, J. Bang, and S.B. Zhang, Phys. Rev. B 86, (2012).
7. Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes
T. Yang, B. Yao, T.T. Zhao, G.Z. Xing, H. Wang, H.L. Pan, R. Deng, Y.R. Sui, L.L. Gao, H.Z. Wang, T. Wu, and D.Z. Shen, J. Alloys Compd. 509, 5426 (2011)