TOF-SIMS services Singapore Time-of-Flight Secondary Ion Mass Spectrometry, often known as static SIMS, is a commonly used technique for characterising surfaces and impurities. It is similar to dynamic SIMS, which uses a steady stream of primary ions to carve a sputter crater into a sample over the course of minutes. Analysing these secondary ions reveals information on the molecular, inorganic, and elemental species present on the surface.
For example, if organic pollutants like oils were adsorbed on the surface, TOF-SIMS would expose them, whereas other techniques might not, especially at extremely low levels. TOF-SIMS is a survey technique that can detect all elements in the periodic table, including H.
Furthermore, TOF-SIMS services Singapore this analysis can yield mass spectral information, image information in the XY dimension across a sample, and depth profile information in the Z direction within a sample.
Analytical characterisation of light elements, such as lithium, is extremely difficult, if not impossible, using standard techniques like energy-dispersive X-ray spectroscopy. This also applies to high-resolution material analysis of samples with extremely low elemental concentrations. A SIMS (secondary ion mass spectrometry) detector offers sensitive surface examination in a wide range of commercial and scientific applications. The approach offers extensive elemental and isotopic information about the sample and allows for in-depth profiling examination.
TOF-SIMS services Singapore secondary ion mass spectroscopy is achievable with DualBeam equipment because ionised particles are created during the FIB milling process; because these particles come from such a shallow depth, they are considered a surface analysis approach. The primary advantages of using SIMS analysis into FIB-SEM technology include:
Detect and map all elements of the periodic table, including light elements like hydrogen, lithium, boron, and carbon, in challenging materials like low-carbon steels. Excellent depth and lateral resolution required for 3D analytical characterisation.
High-sensitivity elemental analysis, capable of identifying concentrations at the parts-per-million level
High mass resolution.
Surface Composition Information
All isotopes were separated and analysed, and their spatial distribution was analytically characterised. Read More