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Manuscripts Under Review and In Preparation (*Equal Contribution) 

(J6) Qingyun Xie, John Niroula, Toiyob Hossain, Bejoy Sikder, Nitul S. Rajput, Elham Rafie Borujeny, Mengyang Yuan, Minsik Oh, Hridibrata Pal, Nadim Chowdhury, and Tomás Palacios. “Si-CMOS-compatible GaN p-channel Transistors” in Review, IEEE Electron Device Letters (2023)

Published Manuscripts (*Equal Contribution) 

(J5) Toiyob Hossain, Tanvir Hossain, AKM Anindya Alam, Bejoy Sikder, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, Nadim Chowdhury, “System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity", IEEE Journal of the Electron Devices Society (2024) [Invited Paper]

(C3) Rafid Hassan Palash, Toiyob Hossain, Bejoy Sikder, Qingyun Xie, Victor Moroz, Tomás Palacios, and Nadim Chowdhury. "Performance Optimization of GaN based Optically Triggered Transistors” to Appear in 70th IEEE International Electron Devices Meeting (IEDM) (2024) [Link](J4) Bejoy Sikder*, Toiyob Hossain*, Qingyun Xie, John Niroula, Nitul S. Rajput, Koon Hoo Teo, Hiroshi Amano, Tomás Palacios, and Nadim Chowdhury, “Hole Transport Mechanism at high temperatures in p-GaN/AlGaN/GaN Heterostructure”. Applied Physics Letters 124(24)(J3) Toiyob Hossain*, Abdul Ahad Mamun*, Fariba Islam, and Mohammad Muntasir Hassan. “Efficient Broadband Light Absorption in a Bioinspired Silicon Photonic Structure.” The Journal of Physical Chemistry C (2024).(C2) Toiyob Hossain, Bejoy Sikder, Md Tasnim Azad, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, and Nadim Chowdhury. “Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity.” In IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2024, Bangalore, India. [Selected as an outstanding Student Presentation and invited for an extended version in IEEE J-EDS](C1) Aroni Ghosh*, Toiyob Hossain*, Md Jawad UI Islam*, Mrinmoy Kundu*, Nawshad Binta Nizam*, and Shaikh Anowarul Fattah. “Brindle: A Low-Cost Refreshable Braille Display with Slider Mechanism.” In International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE), Dec 2023, Thiruvananthapuram, India.(J2) Md Tasnim Azad*, Toiyob Hossain*, Bejoy Sikder, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, and Nadim Chowdhury. “AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor with Improved Linearity.” IEEE Transactions on Electron Devices, vol. 70, no. 11 (2023): 5570-5576(J1) Mengyang Yuan, Qingyun Xie, Kai Fu, Toiyob Hossain, John Niroula, James A. Greer, Nadim Chowdhury, Yuji Zhao, and Tomás Palacios. “GaN ring oscillators operational at 500° C based on a GaN-on-Si platform.” IEEE Electron Device Letters 43, no. 11 (2022): 1842-1845.