BResearh

👋 Welcome! I'm Byungki Ryu

I am a Principal Researcher at the Korea Electrotechnology Research Institute (KERI) and a faculty member at UST (University of Science and Technology), Korea.

🧭 Research Statement

Byungki Ryu is a transdisciplinary thermoelectric researcher exploring the fundamental principles of energy conversion, material-device coupling, and quantum-informed interface and defect design for next-generation thermoelectric systems. He leverages first-principles modeling, FEM-based simulations, experimental design, and machine learning–assisted property analysis. His recent work focuses on enhancing thermoelectric generator performance, developing thermal information encoding strategies, and expanding the understanding of incommensurate (irrational-ratio) interface structures through the integration of data-centric and physics-informed approaches.

🔬 Research Expertise

📘 Thermoelectric materials and devices: from fundamental transport physics to performance optimization
🧲 Defect physics, interface engineering, and alloy design in functional materials
💻 First-principles (DFT) calculations and FEM-based thermoelectric device modeling
🧪 Experimental design and interpretation of high-performance and reliable thermoelectric materials, devices, and systems
📈 Machine learning–assisted property prediction and data curation for integrated theory–experiment workflows

🧠 Current Projects

Performance prediction and evaluation of thermoelectric power generators (TEGs) (KETEP, as core researcher)
Alloy design and modeling of incommensurate interface structures (NRF, as PI)
Machine learning-based materials informatics and property curve prediction (KERI, as participant)
Thermoelectric active cooling and thermal management (KEIT, as participant)

📂 Research Links

🧭 Main Link Hub – All Research, Databases, and Projects
🔗 Personal Research Homepage (Streamlit) – may take up to 30 seconds to load if idle
🧪 Legacy Personal Page (Google Sites)
📊 Thermoelectric Database – teMatDb – may take up to 30 seconds to load if idle
🧱 Alloy Design Database – may take up to 30 seconds to load if idle

📫 Contact

Email: byungkiryu@keri.re.kr

RESEARCH, recent

Thermoelectric Physics and Science, First-principles electronic structure calculations, Defects in semiconductors

-- Thermoelectric phenomena, thermoelectric differential equation (math)

-- Inhomogeneous materials and thermoelectric transport (physics)

-- Thermoelectric devices and energy conversion (device)

-- New thermoelectric devices for information (new concept)

RESEARCH, previous

Research
- First-Principles Electronic Structure Calculations
  - Defects, interfaces, semiconductors, solids
- Thermoelectrics
Specialist for
- - Materials design using first-principles electronic structure calculations (VASP DFT code)
  - Thermoelectric transport calculations using Boltzmann equation (Phonopy, Phono3py, BoltzTraP, BoltzTraP2)
  - Thermoelectric device design and optimization (pykeri 2019)
Previous Works
- Low-dimensional materials (2006-2007) / Aluminate AlO2 nanotube bundles, Rotated graphene bilayer (RGB), Carbon nanotubes
- High-K dielectrics (2007-2010) /
  - Quantum tunneling through nanometer-thick HfO2
  - Oxygen vacancy in crystalline and amorphous hafnia, and in amoprhous alumina, Oxygen vacancy in amorphous HfSiO4
  - Oxygen vacancy near Si/m-HfO2 and Si/a-HfO2 interfaces, Defects responsible for the Fermi-level pinning in n+ poly Si/HfO2 gate stacks
- Silicon nanowires
  - Defect induced hole carrier generation in Ge/Si core-shell nanowires
  - Formation of P, As, Sb dopant pairs in Si nanowires and dopant deactivation
- Oxide semiconductors (2008-2010)
  - Oxygen vacancy in ZnO, Oxygen vacancy in a-ZTO, a-IGZO, Oxygen vacancy near ZnO/HfO2 interface, Oxygen vacancy in a-ZTO/a-Al2O3 interface
  - Interface structure of ZnO/HfO2, Band alignment and oxygen vacancy defect levels in various oxide semiconductors and gate dielectrics
  - Structure generation of amorphous Zn-Sn-O (a-ZTO), amorphous In-Ga-Zn-O (a-IGZO), amorphous B-doped a-ZTO (a-BZTO), amoprhous Hf-In-Zn-O (a-HIZO)
  - Origin of negative bias illumination stress instability in oxide semiconductor devices
- Nb-based alloy membranes (2011-2012)
  - NbM-H solution where M is 3d transition metal.
- Thermoelectcrics (2011-)
  - Metal impurity doped Bi-Sb-Te-Se systems
  - Native defects in Bi-Sb-Te-Se
  - Cu, Ag, Au point defects in Bi-Sb-Te-Se
- Phosphors (2011-2012)
  - Hybrid DFT calculations of La-Si-N based solid state lighting materials (phosphors) with Ce activator
  - Defect and Ce levels of phosphors, FTIR-mode of defects
  - Defect quenching mechanism in nitride phosphors
- M-type Sr-hexa-ferrite (SrM) (2012)
  - Electronic structure of bulk and TM doped SrM and Codoping strategy for high magnetocrystalline energy materials
  - Codoping pair of group-I alkali elements for group-V element doping
  - Metal substitution induced Fe valence change
- Transparent Conducting Materials/Electrodes (TCMs/TCEs) (2012-2013)
  - Band transport and transparency of various materials
  - Transparent metals, highly conductive semiconductors

Byungki Ryu

Physicist at KERI

RBK / Ryu, Byungki / Byungki Ryu / Bk Ryu / B. Ryu / BKR /

Ph.D in Physics
ORCID = 0000-0002-0867-6457
Scopus Author ID: 16242305700
ResearcherID: F-7050-2010

CONTACT INFO

Email byungkiryu @ keri.re.kr
Phone +82-55-280-1657 (office) +82-10-8867-1983 (private)
Webpage https://sites.google.com/site/cta4rbk/ or https://sites.google.com/view/tesimulator/
Thermoelectric Web Simulator https://tes.keri.re.kr/

Where I visited

2025Anaheim, CA, US (March, 2024) [APS]2024 Europe tour (London-Paris-Switzland-Milano-Venezia-Pisa-Firenze-Rome-Abu Dabi) (Aug, 2024) [VACATION] // 35th oversea tripKrakow, Poland, (June 29-July 6, 2024) [ICT2024]Minneapolis, MN, US (March 4-8, 2024) [APS]2023 Kyoto, Japan (Dec 10-17, 2023) [MRM2023], Invited talk Tskuba and Koriyama, Japan (September 25 to October 6, 2023) [Tsukuba Conference 2023, VISIT AIST and RD20], invited by AIST Prague, Chezh Republic (September 16-21, 2023) [ECT2023], Oral talk // 30th oversea trip Tokyo (August 28 - September 2, 2023) [VACATION] Seattle, WA, US (June 21-25, 2023) [ICT2023], Invited Talk Las Vegas, NV, US (March 3-10, 2023) [APS]2020-2022 Covid-192019 Iceland (Oct 2019) [VACATION]Koln, Germany (April-8 to April-24), for the international exchange between KERI and DLR // 25th oversea trip University of Warwick, UK (April-11 to April-13), to visit Prof. Neophytos Neophytou's groupBoston, US (March 2019) [APS]2018Kashiwa campus, University of Tokyo, Kashiwa-si, Japan (Aug 2018) [To discuss TE material data with starryweb]Caen, France & Köln, Germany (July 2018) [ICT-2018 & DLR visit]LA, US (March 2018) [APS]2017Knappenberg, Austria & Pdova, Italy (Sept 2017) [GK TE workshop and ECT-2017] // 20th oversea tripPuket (May 2017) [VACATION] New Orleans (March 2017) [APS]Okinawa (Jan 2017) [VACATION]2016Croatia, Slovenia, (Sept 2016) [VACATION]Baltimore, US (March 2016) [APS], Cincinnati, US [Cincinnati University, Prof. Bahk] // 15th oversea trip2015Houston for ASME2015, Oakland for BerkeleyGW WS, US (Nov 2015) [business]San Antonio, United States (March 2015) [APS]2014Berlin, Germany & Warsaw, Poland (Sept 2014) [EMRS (business)]2013Baltimore, US (March 2013) [APS]2012Portugal, Spain, Netherland (Oct 2012) [HONEYMOON] // 10th oversea trip2010Osaka, Japan (May 2010) [business]Portland, United States (March 2010) [APS]2009Beijing, China (Oct 2009) [Asian Workshop on E/S]Saint Petersburg, Russia (Aut 2009) [ICDS]Pittsburgh, United States (March 2009) [APS] // 5th oversea trip2008Montpellier, France (Aug 2008) [NT'08], with AT LeeKaohsiung, Taiwan (Nov 2008) [Asian Workshop on E/S]2007Hiroshima, Japan (Nov 2007) [Asian Workshop on E/S]Albuquerque, United States (July 2007) [ICDS] // 1st oversea trip

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