EXPERIMENT 01

Title of the Experiment: To simulate the electrical characteristics of semiconductor diodes. 

Aim or Objective: To simulate the electrical characteristics of semiconductor diodes and analyze their performance under both forward and reverse bias conditions across varying temperature ranges, and to determine key diode parameters. 

1. Simulate the I-V characteristics of a semiconductor diode under forward and reverse bias conditions.

 2. Extract critical parameters such as reverse saturation current (I₀), forward voltage (𝑉𝑓). 

3. Study the effect of temperature variations on diode performance. 4. Compare simulated data with theoretical models and manufacturer datasheet values. 

Given Data:  

Diode- 

o Specifications: Forward resistance of diode Rf = 0, 

o Reverse resistance of diode Rr = ∞, 

o Cut in Voltage of diode Vɣ = 0.6V 

o Peak forward current = 2.5 mA 

o Input voltage = 10 V 17 03 

Step by step procedure to carry out experiment: 

1. Launch LT Spice window. 

2. Go to File and then New Schematic

 3. Go to Edit and then components and choose the required components and draw the circuit diagram for obtaining the VI characteristics.

 4. Set the values of the components as per the circuit diagram. 

5. Add two labels V1 and V0 across diode. 

6. Then go to simulate, edit simulation command and choose DC sweep. 

7. Then run the simulation.

 8. Record the obtained VI characteristics 

9. To obtain the Temperature effect, go to spice directive (.t) add directive “.STEMP TEMP<TEMP1><TEMP2><INCREMENT> ” (e.g., .STEMP TEMP 30 40 5) 

10. Then run the simulation. 

10. Record the obtained VI characteristics 

Results and discussion:

The experiment measured the relationship between voltage and current at various input values. The results demonstrate that as v1 increases, the voltage difference VD and current ID increase proportionally, confirming the linearity in the systems behaviour under the tested condition.

Conclusion:

In conclusion, the experiment verified the direct relationship between input voltage (V1) and the resulting electrical parameters (VD AND ID). The data collected provides insight into the predictable nature of this systems behaviour, aligning with theoretical models