Outcomes

Publications

Book Chapter:

[1]. Vaibhav Neema, Priyanka Parihar and Santosh Kumar Vishvakarma, “Design and analysis of ultra-low power memory architecture with MTCMOS asymmetrical ground-gated 7T SRAM cell” Lecture Notes in Electrical Engineering, Springer Singapore. (Under Review)

Journals:

[1]. Vaibhav Neema, Mansimran Kaur, Deepika Gupta, Santosh Kumar Vishvakarma, Arya Dutt and Ankur Beohar, “ Improvement in Electrical Characteristics of BE-SONOS using High-k Dielectrics in Tunneling” accepted for publication in Transactions on Electrical and Electronic Materials, Springer Publication 2021.

[2]. Natwar Bhootda, Ankit Yadav, Vaibhav Neema, Ambika Prasad Shah and Santosh Kumar Vishvakarma “Series Diode-connected Current Mirror based Linear and Sensitive NBTI Monitoring Circuit" paper under revision for International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley publication (2021).

[3]. Prachi Sanvale, Neha Gupta, Vaibhav Neema, Ambika Prasad Shah, Santosh Kumar Vishvakarma, “An improved read-assist energy efficient single ended P-P-N based 10T SRAM cell for wireless sensor network”, Elsevier, Microelectronics Journal, Sep 2019.

Conference:

[1]. Vaibhav Neema, Kuldeep Raghuwanshi, Ambika Prasad Shah, and Santosh Kumar Vishvakarma, “Vth Extraction Based Run Time Transistor Width Oversizing (TWOS) Module for On-Chip Negative Bias Temperature Instability (NBTI) Mitigation”, Sensor Letters, Vol. 15, No. 5, May 2019, pp. 385-392.