1. Meng-Fan Chang, Chien-Chen Lin, Albert Lee, Yen-Ning Chiang, Chia-Chen Kuo, Geng-Hau Yang, Hsiang-Jen Tsai, Tien-Fu Chen, Shyh-Shyuan Sheu, “A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.pp, no.99., pp.1–16, Apr. 2017 (SCI ,EI)
2. Tsai-Kan Chien; Lih-Yih Chiou, Shyh-Shyuan Sheu, Jing-Cian Lin, Chang-Chia Lee, Tzu-Kun Ku, Ming-Jinn Tsai, Chih-I Wu, “Low-Power MCU With Embedded ReRAM Buffers as Sensor Hub for IoT Applications,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol.6, no.2, pp.247–257, Jun. 2016 (SCI ,EI)
3. Meng-Fan Chang, Lie-Yue Huang, Wen-Zhang Lin, Yen-Ning Chiang, Chia-Chen Kuo, Ching-Hao Chuang, Keng-Hao Yang, Hsiang-Jen Tsai, Tien-Fu Chen, Shyh-Shyuan Sheu, “A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.51, no.11., pp.2786–2798, Nov. 2016 (SCI ,EI)
4. Meng-Fan Chang, Meng-Fan Chang, Albert Lee, Pin-Cheng Chen, Chrong Jung Lin, Ya-Chin King, Shyh-Shyuan Sheu, and Tzu-Kun Ku, “Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices,” IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, vol.5, no.2, pp.183–193, Jun. 2015 (SCI ,EI)
5. Sing-Kai Huang, Jing-Yuan Wang, Chiao-Han Lan, Shawn S. H. Hsu, Sih-Han Li, Pei-Ling Tseng, Chih-Sheng Lin, and Shyh-Shyuan Sheu, “An Ultra Compact Millimeter-Wave VCO in 3-D IC Technology,” IEEE MICROWAVE AND WIRELESS COMPOENTS LETTERS, vol.24, no.4, pp.251–253, Apr. 2015 (SCI ,EI)
6. Ching-Yi Chen, Hsiu-Chuan Shih, Cheng-Wen Wu, Chih-He Lin, Pi-Feng Chiu, Shyh-Shyuan Sheu, and Frederick T. Chen, “RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme,” IEEE TRANSACTIONS ON COMPUTERS, vol.64, no.1, pp.180–190, Jan. 2015 (SCI ,EI)
7. Meng-Fan Chang, Shu-Meng Yang, Chia-Chen Kuo, Ting-Chin Yang, Che-Ju Yeh, Tun-Fei Chien, Li-Yue Huang, Shyh-Shyuan Sheu, Pei-Ling Tseng, Yu-Sheng Chen, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, and Ming-Jer Kao, “Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications,” IEEE TRANSACTIONS OF S CIRCUITS AND SYSTEM II, vol.62, no.1, pp.80–84, Jan. 2015 (SCI ,EI)
8. Meng-Fan Chang, Chia-Chen Kuo, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, Jui-Jen Wu, and Yue-Der Chih, “Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.49, no.4, pp.908–916, Apr. 2014 (SCI ,EI)
9. Meng-Fan Chang, Chih-Sheng Lin, Wei-Cheng Wu, Ming-Pin Chen, Yen-Huei Chen, Zhe-Hui Lin, Shyh-Shyuan Sheu, Tzu-Kun Ku, Cha-Hsin Lin, and Hiroyuki Yamauchi, “A High Layer Scalability TSV-Based 3D-SRAM With Semi-Master-Slave Structure and Self-Timed Differential-TSV for High-Performance Universal-Memory-Capacity-Platforms,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.48, no.6, pp.1521–1528, Mar. 2013 (SCI ,EI) Ranking: 21/242
10. Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, and Ming-Jinn Tsai, “A High-Speed (sub-8ns) Read-Write Random Access 4Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.48, no.3, pp.878–891, Mar. 2013 (SCI ,EI) Ranking: 21/242
11. Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Yu-Sheng Chen, Pang-Shiu Chen, Ming-Jinn Tsai, and Yu-Lung Lo, “A 50ns Verify Speed in Resistive random access memory by using a Write Resistance Tracking Circuit,” IEICE TRANSACTIONS ON ELECTRONICS, vol.E95-C, no.6, pp.1128–1131 Jun. 2012 (SCI, EI) Ranking: 213/242
12. Pi-Feng Chiu, Meng-Fan Chang, Che-Wei Wu, Ching-Hao Chuang, Shyh-Shyuan Sheu, Yu-Sheng Chen, and Ming-Jinn Tsai, “Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.47, no.6, pp.1483–1496 Jun. 2012 (SCI, EI)
13. Cheng-Ta Ko, Zhi-Cheng Hsiao, Yao-Jen Chang, Peng-Shu Chen, Yu-Jiau Hwang, Huan-Chun Fu, Jui-Hsiung Huang, Chia-Wen Chiang, Shyh-Shyuan Sheu, Yu-Hua Chen, Wei-Chung Lo, and Kuan-Neng Chen, “A Wafer-Level Three-Dimensional Integration Scheme With Cu TSVs Based on Microbump/Adhesive Hybrid Bonding for Three-Dimensional Memory Application,” IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, vol.12, no.3, pp.209–216 Jun. 2012 (SCI, EI)
14. Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Meng-Fan Chang, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Tai-Yuan Wu, Frederick T. Chen, Keng-Li Su, Mign-Jer Kao, and Ming-Jinn Tsai, “Fast-Write Resistive RAM (RRAM) for Embedded Applications,” IEEE Design & Test of Computers, vol.28, no.1, pp.64–71 Jan. 2011 (SCI, ECT) Ranking: 80/242
15. Shyh-Shyuan Sheu, Zhe-Hui Lin, Jui-Feng Hung, John H. Lau, Peng-Shu Chen, Shih-Hsien Wu, Keng-Li Su, Chih-Sheng Lin, Shinn-Juh Lai, Kuo-Hsing Cheng, Tzu-Kun Ku, Wei-Chung Lo, Ming-Jer Kao “An Electrical Testing Method for Blind Through Silicon Vias (TSVs) for 3D IC Integration,” Journal of Microelectronics & Electronic Packaging, vol.8, no.4, pp. 140-145 4th Qtr 2011. (EI)
16. Ching-Hua Wang, Yi-Hung Tsai, Kai-Chun Lin, Meng-Fan Chang, Ya-Chin King, Chrong Jung Lin, Shyh-Shyuan Sheu, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen and Ming-Jinn Tsai, “Three-Dimensional 4F2 ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.58, no.8, pp.2466–2472 Aug. 2011 (SCI, EI)
17. Chiang, M.-H.; Liao, Y.-B.; Lin, J.-T.; Hsu, W.-C.; Yu, C.; Chiang, P.-C.; Hsu, Y.-Y.; Liu, W.-H.; Sheu, S.-S.; Su, K.-L.; Kao, M.-J.; Tsai, M.-J., “Low power design of phase-change memory based on a comprehensive model,” IET Computers & Digital Techniques, vol.4, no.4, pp.285–292 Jun. 2010 (SCI, EI)
18. 林哲輝、林志和、許世玄 “高通量核酸定序技術與DNA感測系統” 電光先鋒, PP.68-73, 2011年12月
19. 邱必芬、許世玄、林文斌、林志和 “應用於低耗能可攜式裝置之非揮發性8T2R靜態隨機存取式記憶體” 電光先鋒, PP.90-96, 2011年4月
20. 李思翰、賴信吉、許世玄、黃尊禧 “ 利用3DIC矽穿孔製程技術開發積體電感元件之研究” 電光先鋒, PP.58-66, 2010年11月
1. Tsai-Kan Chien, Lih-Yih Chiou, Chang-Chia Lee, Yao-Chun Chuang, Shien-Han Ke, Shyh-Shyuan Sheu, Heng-Yuan Li, Pei-Hua Wang, Tzu-Kun Ku, Ming-Jinn Tsai, Chih-I Wu, “An energy-efficient nonvolatile microprocessor considering software-hardware interaction for energy harvesting applications,” IEEE Symposium on VLSI Design, Automation and Test (VLSI-DAT), pp.1-4, Apr. 2016
2. Tsai-Kan Chien, Lih-Yih Chiou, Chieh-Wen Cheng, Shyh-Shyuan Sheu, Pei-Hua Wang, Ming-Jinn Tsai, Chih-I Wu, “Memory access algorithm for low energy CPU/GPU heterogeneous systems with hybrid DRAM/NVM memory architecture ,” IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.461-464, Oct. 2016
3. Tsai-Kan Chien, Lih-Yih Chiou, Chieh-Wen Cheng, Shyh-Shyuan Sheu, Pei-Hua Wang, Ming-Jinn Tsai, Chih-I Wu, “A low store energy and robust ReRAM-based flip-flop for normally off microprocessors,” IEEE International Symposium on Circuits and Systems (ISCAS), pp.2803-2806,May. 2016
4. Meng-Fan Chang, Ching-Hao Chuang, Yen-Ning Chiang, Shyh-Shyuan Sheu, Chia-Chen Kuo, Hsiang-Yun Cheng, John Sampson, Mary Jane Irwin, “Designs of emerging memory based non-volatile TCAM for Internet-of-Things (IoT) and big-data processing: A 5T2R universal cell,” IEEE International Symposium on Circuits and Systems (ISCAS), pp.1142-1145,May. 2016
5. Meng-Fan Chang, Chien-Chen Lin, Albert Lee, Chia-Chen Kuo, Geng-Hau Yang, Hsiang-Jen Tsai, Tien-Fu Chen, Shyh-Shyuan Sheu, Pei-Ling Tseng, Heng-Yuan Lee, Tzu-Kun Ku, “A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time ,” IEEE International Solid-State Circuits Conference (ISSCC), pp.318-319, Feb. 2015.
6. Meng-Fan Chang, Wang-Ying Lu, Shin-Jang Shen, Ming-Pin Chen, Chih-Sheng Lin, S. -S. Sheu, C. -H. Hung, Y. -S. Yang; Y. -J. Kuo, S. -N. Hung, H. -T. Lue, Chang-Hong Shen, Jia-Min Shieh, “Supply-variation-resilient nonvolatile 3D IC and 3D memory using low peak-current on-chip charge-pump circuits,” IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), pp.118-121, Oct. 2015.
7. Albert Lee, Meng-Fan Chang, Chien-Chen Lin, Chien-Fu Chen, Mon-Shu Ho, Chia-Chen Kuo, Pei-Ling Tseng, Shyh-Shyuan Sheu, and Tzu-Kun Ku “RRAM-based 7T1R Nonvolatile SRAM with 2x Reduction in Store Energy and 94x Reduction in Restore Energy for Frequent-Off Instant-On Applications,” IEEE Symposium on VLSI Circuits (VLSIC), pp.C76-77 Jun. 2015
8. S. H. Li, C. S. Lin, P. L. Tseng, P. J. Tzeng, S. S. Sheu, Shawn S. H. Hsu, C. H. Wang, W. C. Lo, and T. K. Ku, “Fully 3-D Symmetrical TSV Monolithic Transformer for RFIC,” IEEE Electronic Components and Technology Conference (ECTC). pp.987-993, Jun. 2015
9. Meng-Fan Chang, Chien-Chen Lin, Albert Lee, Chia-Chen Kuo, Geng-Hau Yang, Hsiang-Jen Tsai, Tien-Fu Chen, Shyh-Shyuan Sheu, Pei-Ling Tsen, Heng-Yuan Lee, Tzu-Kun Ku “A 3T1R Nonvolatile TCAM Using MLC ReRAM with Sub-1ns Search Time ,” IEEE International Solid-State Circuits Conference (ISSCC), pp.318-319, Feb. 2015.
10. Wen-Pin Lin, Shyh-Shyuan Sheu, Chia-Chen Kuo, Pei-Ling Tseng, Meng-Fan Chang, Keng-Li Su, Chih-Sheng Lin, Kan-Hsueh Tsai, Sih-Han Lee, Szu-Chieh Liu1,Yu-Sheng Chen, Heng-Yuan Lee, Ching-Chih Hsu, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, Ming-Jer Kao, “A Non-volatile Look-up Table Using ReRAM for Reconfigurable Logic,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp.133-136, Nov. 2014
11. Li-Yue Huang, Meng-Fan Chang, Ching-Hao Chuang, Chia-Chen Kuo, Chien-Fu Chen, Geng-Hau Yang, Hsiang-Jen Tsai, Tien-Fu Chen, Shyh-Shyuan Sheu, Keng-Li Su, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, and Ming-Jer Kao “ReRAM-based 4T2R Nonvolatile TCAM with 7x NVM-Stress Reduction, and 4x Improvement in Speed-WordLength-Capacity for Normally-Off Instant-On Filter-Based Search Engines Used in Big-Data Processing,” IEEE Symposium on VLSI Circuits (VLSIC), Jun. 2014
12. Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Shakh Ziaur Rahaman, Chen-Han Tsai, Kan-Hsueh Tsai, Tai-Yuan Wu, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Li-Heng Lee, Tzu-Kun Ku, “Resistance Instabilities in a Filament-based Resistive Memory,” IEEE International Reliability Physics Symposium (IRPS), Apr. 2013
13. Shyh-Shyuan Sheu, Chia-Chen Kuo, Meng-Fan Chang, Pei-Ling Tseng, Chih-Sheng, Lin, Min-Chuan Wang, Chih-He Lin, Wen-Pin Lin, Tsai-Kan Chien, Sih-Han Lee, Szu-Chieh Lee, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Ching-Chih Hsu, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming-Jinn Tsai, Ming-Jer Kao, “A ReRAM Integrated 7T2R Non-volatile SRAM for Normally-off Computing Application,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp.245-248, Nov. 2013
14. Meng-Fan Chang, Chia-Cheng Ku, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Zhe-Hui Lin, Keng-Li Su, Yu-Sheng Chen, Wen-Pin Lin, Heng-Yuan Lee, Chen-Han Tsai, Wei-Su Chen, Frederick T. Chen, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai, Jui-Jen Wu, Yu-Der Chih, and Sreedhar Natarajan “Area-Efficient Embedded RRAM Macros with Sub-5ns Random-Read-Access-Time Using Logic-Process Parasitic-BJT-Switch (0T1R) Cell and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme,” IEEE Symposium on VLSI Circuits (VLSIC), pp.C112-C113, Jun. 2013
15. Wen Chao Shen, Chin Yu Mei, Y. -D. Chih, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ya-Chin King, Chrong Jung Lin, “High-K Metal Gate Contact RRAM (CRRAM) in Pure 28nm CMOS Logic Process,” IEEE International Electron Device Meeting (IEDM), pp.745- 748, Dec. 2012.
16. S.S. Sheu, Z.H. Lin, C. S. Lin, J. H. Lau, S.H. Lee, K. L. Su, T. K. Ku, S. H. Wu, J. F. Hung, P. S. Chen, S. J. Lai, W.C. Lo and M. J. Kao, “Electrical Characterization of Through Silicon Vias (TSVs) with an On Chip Bus Driver for 3D IC Integration,” IEEE Electronic Components and Technology Conference (ECTC). pp.851-856, Jun. 2012
17. Jui-Feng Hung, John H. Lau, Peng-Shu Chen, Shih-Hsien Wu, Shinn-Juh Lai, Ming-Lin Li, Shyh-Shyuan Sheu, Pei-Jer Tzeng, Zhe-Hui Lin, Tzu-Kun Ku, Wei-Chung Lo, Ming-Jer Kao, “Electrical Testing of Blind Through-Silicon Via (TSV) for 3D IC Integration,” IEEE Electronic Components and Technology Conference (ECTC). pp.564-570, Jun. 2012
18. Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Tsai, C. H.; Gu, P. Y.; Wu, T. Y.; Tsai, K. H.; Sheu, S. S.; Lin, W. P.; Lin, C. H.; Chiu, P. F.; Chen, W. S.; Chen, F. T.; Lien, C.; Tsai, M.-J., “Challenges and opportunities for HfOX based resistive random access memory,” IEEE International Electron Device Meeting (IEDM), pp.31.3.1- 31.3.4, Dec. 2011.
19. Meng-Fan Chang, Pi-Feng Chiu, Wei-Cheng Wu, Ching-Hao Chuang, Shyh-Shyuan Sheu, “Challenges and Trends in Low-Power 3D Die-Stacked IC Designs Using RAM, Memristor Logic, and Resistive Memory (ReRAM),” IEEE International Conference on ASIC, pp.299-302, Nov.2011.
20. Shyh-Shyuan Sheu, Zue-Hua Lin, Jui-Feng Hung, John.H.Lau, Peng-Shu Chen, Shih-Hsien Wu, Keng-Li Su, Chih-Sheng Lin, Shinn-Juh Lai, Tzu-Kun Ku, Wei-Chung Lo, Ming-Jer Kao, “An Electrical Testing Method for Blind Through Silicon Vias (TSVs) for 3DIC integration,” International Symposium on Microelectronics and Packaging (IMAPS), pp.208-214, Oct.2011.
21. Meng-Fan Chang, Pi-Feng Chiu, Ching-Hao Chuang, Che-Wei Wu, Mon-Shu Ho, Ping-Cheng Chen, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Tzu-Kun Ku, “Challenges and Trends of Resistive Memory (Memristor) Based Circuits for 3D-IC Applications,” International Solid State Devices and Materials (SSDM), pp.1053-1054, Sep. 2011
22. J. Wang, T. Huang, Y. Wu, S. Hsu, Z. Lin, C. Lin, S. Sheu, T. Ku, and C. Lin, “Testkey design of through silicon vias (TSVs) for accurate de-embedding and RF model parameters extraction,” International Solid State Devices and Materials (SSDM), pp.62-63, Sep. 2011
23. Meng-Fan Chang, Wei-Cheng Wu, Chih-Sheng Lin, Pi-Feng Chiu, Ming-Bin Chen, Yen-Huei Chen, Hsin-Chi Lai, Zhe-Hui Lin, Shyh-Shyuan Sheu, Tzu-Kun Ku, Yamauchi, H., “A larger stacked layer number scalable TSV-based 3D-SRAM for high-performance universal-memory-capacity 3D-IC platforms,” IEEE Symposium on VLSI Circuits (VLSIC), pp.74-75, Jun. 2011
24. Hsiu-Chuan Shih, Ching-Yi Chen, Cheng-Wen Wu, Chih-He Lin, and Shyh-Shyuan Sheu, “Training-based forming process for RRAM yield improvement ,” IEEE VLSI Test Symposium, pp. 146-151, May. 2011.
25. Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Pei-Yi Gu, Sum-Min Wang, Chen, F.T., Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku, Ming-Jer Kao, and Ming-Jinn Tsai, “A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability ,” IEEE International Solid-State Circuits Conference (ISSCC), pp.200-202, Feb. 2011.
26. Meng-Fan Chang; Pi-Feng Chiu and Shyh-Shyuan Sheu, “Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC ,” Asia and South Pacific Design Automation Conference (ASPDAC), pp.197-203, Jan. 2011.
27. Lee, H.Y.; Chen, Y.S.; Chen, P.S.; Gu, P.Y.; Hsu, Y.Y.; Wang, S.M.; Liu, W.H.; Tsai, C.H.; Sheu, S.S.; Chiang, P.C.; Lin, W.P.; Lin, C.H.; Chen, W.S.; Chen, F.T.; Lien, C.H.; Tsai, M. J., “Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance,” IEEE International Electron Device Meeting (IEDM), pp.19.7.1- 19.7.4, Dec. 2010.
28. Ching-Hua Wang, Yi-Hung Tsai, Kai-Chun Lin, Meng-Fan Chang, Ya-Chin King, Chrong-Jung Lin, Shyh-Shyuan Sheu, Yu-Sheng Chen, Heng-Yuan Lee, Chen, F.T., and Ming-Jinn Tsai, “Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process,” IEEE International Electron Device Meeting (IEDM), pp.29.6.1- 29.6.4, Dec. 2010.
29. Pi-Feng Chiu, Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Pei-Chia Chiang, Che-Wei Wu, Wen-Pin Lin, Chih-He Lin, Ching-Chih Hsu, Chen, F.T., Keng-Li Su, Ming-Jer Kao, and Ming-Jinn Tsai, “A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications,” IEEE Symposium on VLSI Circuits (VLSIC), pp.229-230, Jun. 2010
30. Yi-Hsuan Chiu, Yi-Bo Liao, Meng-Hsueh Chiang, Chia-Long Lin, Wei-Chou Hsu, Pei-Chia Chiang, Yen-Ya Hsu, Wen-Hsing Liu, Shyh-Shyuan Sheu, Keng-Li Su, Ming-Jer Kao, and Ming-Jinn Tsai, “Impact of resistance drift on multilevel PCM design,” IEEE International Conference on IC Design and Technology (ICICDT), pp.20-23, Jun. 2010.
31. Chen, Y.S., Lee, H.Y., Chen, P.S., Gu, P.Y., Chen, C.W., Lin, W.P., Liu, W.H., Hsu, Y.Y., Sheu, S.S., Chiang, P.C., Chen, W.S., Chen, F.T., Lien, C.H., and Tsai, M.-J., “Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity,” IEEE International Electron Device Meeting (IEDM), Dec., 2009.
32. Jun-Tin Lin, Yi-Bo Liao, Meng-Hsueh Chiang, I-Hsuan Chiu, Chia-Long Lin, Wei-Chou Hsu, Pei-Chia Chiang, Shyh-Shyuan Sheu, Yen-Ya Hsu, Wen-Hsing Liu, Keng-Li Su, Ming-Jer Kao, and Ming-Jinn Tsai;, “Design optimization in write speed of multi-level cell application for phase change memory,” IEEE International Conference of Electron Device and Solid-State Circuits (EDSSC), pp.525-528, Dec. 2009.
33. Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Tai-Yuan Wu, Frederick T. Chen, Keng-Li Su, Ming-Jer Kao, Kuo-Hsing Cheng, Ming-Jinn Tsai, “A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme ,” IEEE Symposium on VLSI Circuits (VLSIC), pp.82-83, Jun. 2009
34. Shyh-Shyuan Sheu, Lieh-Chiu Lin, Wen-Hao Wang, Pei-Chia Chiang, Keng-Li Su, Ming-Jer Kao, Kuo-Hsing Cheng, Ming-Jinn Tsai, “4-Mb SPI Flash Compatible Phase-Change Memory ,” IEEE Symposium on VLSI Design, Automation and Test (VLSI-DAT), pp.82-83, Apr. 2007
1. MEMORY STORAGE CIRCUIT AND METHOD OF DRIVING MEMORY STORAGE CIRCUIT , 美國,發明, 第US 8,942,027號, 莊淨皓, 張孟凡、許世玄, 林哲輝, 2015/01/27
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6. NON-VOLATILE RANDOMACCESS MEMORY COUPLED TO A FIRST’ SECOND AND THIRD VOLTAGE AND OPERATION METHOD THEREOF , 美國,發明, 第US 8,422,295號, 林志和, 林文斌, 邱必芬, 許世玄, 2013/04/16
7. PROCESS VARIATION DETECTION APPARATUS AND PROCESS VARIATION DETECTION METHOD , 美國,發明, 第US 8,392,132號, 林谷峰、張孟凡、許世玄, 江培嘉, 林文斌, 林志和, 2013/05/05
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11. Verification circuits and methods for phase change memory array, 美國,發明, 第7,974,122號, 林文斌, 許世玄, 江培嘉, 2011/07/05至2029/09/11
12. Memory and writing method thereof , 美國,發明, 第7,889,547號, 許世玄, 林烈萩, 江培嘉, 林文斌, 2011/02/15至2029/06/19
13. Memory and method for dissipation caused by current leakage, 美國,發明, 第7,885,109號, 林文斌, 許世玄, 林烈萩, 江培嘉, 2011/02/08至2028/12/16
14. Phase change memory and control method thereof, 美國,發明, 第7,773,411號, 林烈萩, 許世玄, 江培嘉, 林文斌, 2010/08/10至2028/02/18
15. Writing system and method for phase change memory, 美國,發明, 第7,773,410號, 許世玄, 林烈萩, 江培嘉, 林文斌, 2010/08/10至2028/01/07
16. Device controlling phase change storage element and method thereof, 美國,發明, 第7,796,455號, 江培嘉, 許世玄, 林烈萩, 林文斌, 2010/09/14至2028/09/03
17. Sensing circuit of a phase change memory and sensing method thereof, 美國,發明, 第7,933,147號, 林烈萩, 許世玄, 江培嘉, 2011/04/26至2029/09/05
18. Sensing circuit of a phase change memory and sensing method thereof, 美國,發明, 第7,796,454號, 林烈萩, 許世玄, 江培嘉, 2010/09/14至2028/06/13
19. Writing circuit for a phase change memory, 美國,發明, 第7,787,281號, 許世玄, 林烈萩, 江培嘉, 2010/08/31至2027/12/13
20. Writing circuit for a phase change memory, 美國,發明, 第7,672,176號, 江培嘉, 許世玄, 林烈萩, 2010/03/02至2027/12/06
21. Driving method and system for a phase change memory, 美國,發明, 第7,643,373號, 許世玄, 林烈萩, 江培嘉, 王文翰, 2010/01/05至2027/12/20
22. Sensing circuit for organic memory, 美國,發明, 第7,525,490號, 林展瑞, 許世玄, 張維仁, 2009/04/07至2027/01/31
23. Digital sensing circuit, 美國,發明, 第7,242,174號, 許世玄, 張維仁, 林展瑞, 2007/07/10至2026/06/06
24. Bit cell of organic memory, 美國,發明, 第7,236,390號, 張維仁, 許世玄, 林展瑞, 2007/06/26至2026/03/07
25. Programmable memory cell and operation method, 美國,發明, 第7,369,424號, 蘇耿立, 許世玄, 林展瑞, 張維仁, 貢振邦, 2008/05/06至2026/02/11
26. Brightness control circuits, 日本,發明, 第4238240號, 許世玄, 林烈萩, 陳明道, 林展瑞, 2008/12/16至2025/07/26
27. 相變存儲器與相變存儲器的控制方法, 中國大陸,發明, 第ZL200710159854.4號, 林烈萩, 許世玄, 江培嘉, 林文斌, 2011/08/24至2027/12/24
28. 感測元件及其製造方法, 中華民國,發明, 第I579559號, 李思翰, 林志昇, 陳冠位, 陳邇浩, 許世玄, 2017/04/21
29. 半導體裝置之直通矽晶穿孔修復電路, 中華民國,發明, 第I515866號, 曾珮玲、蘇耿立= 林志昇, 許世玄, 2016/01/01
30. 電路、方法及設備, 中華民國,發明, 第I509779號, 許世玄, 江培嘉, 林文斌2015/11/21
31. 可組態邏輯區塊及其操作方法, 中華民國,發明, 第I493548號, 林文斌, 林志和, 許世玄, 賴信吉, 2015/07/21
32. 非揮發性記憶體的寫入時序控制電路和控制方法, 中華民國,發明, 第I488192號, 邱必芬, 許世玄, 林文斌, 林志和, 2015/06/11
33. 記憶體與記憶體寫入方法, 中華民國,發明, 第I450274號, 許世玄, 林烈萩, 江培嘉, 林文斌, 2014/08/21
34. 電阻式記憶體驗證方法及其驗證裝置, 中華民國,發明, 第I449050號, 許世玄, 江培嘉, 林文斌, 林志和, 2014/08/11
35. 電阻式記憶體及其驗證方法, 中華民國,發明, 第I446352號, 林志和, 許世玄, 林文斌, 江培嘉, 2014/07/21
36. 非揮發性靜態隨機存取記憶體及其操作方法, 中華民國,發明, 第I441185號, 邱必芬, 張孟凡, 林谷峰, 許世玄, 2014/06/11
37. 非揮發性靜態隨機存取式記憶胞以及記憶體電路, 中華民國,發明, 第I429062號, 王敏全, 邱必芬, 許世玄, 2014/03/01
38. 相變化記憶體, 中華民國,發明, 第I412124號, 許世玄, 江培嘉, 林文斌, 2013/10/11
39. 製程偏移偵測裝置與製程偏移偵測方法, 中華民國,發明, 第I405991號, 林谷峰、張孟凡、許世玄, 江培嘉, 林文斌, 2013/08/21
40. 相變化記憶體陣列之驗證電路及方法, 中華民國,發明, 第I402845號, 林文斌, 許世玄, 江培嘉, 2013/07/21
41. 相變化記憶體之感測電路, 中華民國,發明, 第I402847號, 林烈萩, 許世玄, 江培嘉, 2013/07/21
42. 相變化記憶體, 中華民國,發明, 第I379407號, 許世玄, 江培嘉, 林文斌, 2012/12/11
43. 記憶體與抑制記憶體漏電流能量損耗的方法, 中華民國,發明, 第I375957號, 林文斌, 許世玄, 林烈萩, 江培嘉, 2012/11/01
44. 電壓補償電路、具有該電壓補償電路的多階記憶體裝置、與讀取多階記憶體裝置之電壓補償方法, 中華民國,發明, 第I375224號, 許世玄, 江培嘉, 林文斌, 林志和, 2012/10/21
45. 相變化儲存單元控制裝置以及增加相變化儲存單元可靠度的方法, 中華民國,發明, 第I367485號, 江培嘉, 許世玄, 林烈萩, 林文斌, 2012/07/01
46. 資料編程電路以及記憶體編程方法, 中華民國,發明, 第I328827號, 許世玄, 林烈萩, 江培嘉, 林文斌, 2012/02/21
47. 補償電路與具有該補償電路的記憶體, 中華民國,發明, 第I331343號, 許世玄, 江培嘉, 林文斌, 2010/10/01
48. 相變化記憶體與相變化記憶體之控制方法, 中華民國,發明, 第I328816號, 林烈萩, 許世玄, 江培嘉, 林文斌, 2010/08/11至2027/12/05
49. 相變存儲器的寫入系統與方法, 中國大陸,發明, 第ZL200710197139.X號, 許世玄,林烈萩, 江培嘉, 林文斌, 2011/10/26至2027/12/05
50. 相變化記憶體的寫入系統與方法, 中華民國,發明, 第I347607號, 許世玄, 林烈萩, 江培嘉, 林文斌, 2011/08/21至2027/11/07
51. 相變化記憶體寫入電路, 中華民國,發明, 第I342022號, 許世玄,林烈萩, 江培嘉, 2011/05/11至2027/07/04
52. 相變化記憶體之感測電路, 中華民國,發明, 第I334604號, 林烈萩, 許世玄, 江培嘉, 2010/12/11至2027/06/24
53. 相變化記憶體的寫入電路, 中華民國,發明, 第I352359號, 江培嘉, 許世玄, 林烈萩 2011/11/11至2027/06/12
54. 相變化記憶體寫入的驅動方法與系統, 中華民國,發明, 第I320180號, 許世玄, 林烈萩, 江培嘉, 王文翰, 2010/02/01至2027/01/11
55. 可程式化記憶體胞和操作方法, 中華民國,發明, 第I299165號, 蘇耿立, 許世玄, 林展瑞, 張維仁, 貢振邦, 2008/07/21至2026/01/24
56. 數位感測電路, 中華民國,發明, 第I301985號, 許世玄, 張維仁, 林展瑞, 2008/10/11至2025/12/29
57. 亮度控制電路及相關之資料驅動器與顯示裝置, 中華民國,發明, 第I331742號, 許世玄, 林烈萩, 陳明道, 林展瑞, 2010/10/11至2024/09/14
58. 相變存儲單元控制裝置及增加相變存儲單元可靠度的方法, 中國大陸,發明, 第ZL200710162589.5號, 江培嘉, 許世玄, 林烈萩, 林文斌, 2011/06/01至2027/10/18
59. 相變存儲器的感測電路及其感測方法, 中國大陸,發明, 第ZL200710141615.6號, 林烈萩, 許世玄, 江培嘉, 2011/0316至2027/08/16
60. 相變存儲器的寫入電路, 中國大陸,發明, 第ZL200710128067.3號, 江培嘉, 許世玄, 林烈萩, 2011/03/09至2027/06/26
61. 可編程存儲器單元和操作方法, 中國大陸,發明, 第ZL200610066760.8號, 蘇耿立, 許世玄, 林展瑞, 張維仁, 貢振邦, 2009/04/08至2026/04/10
62. 相變存儲器與相變存儲器的控制方法, 中國大陸,發明, 第ZL200710159854.4號, 林烈萩, 許世玄, 江培嘉, 林文斌, 2011/08/24至2027/12/24
63. 有機存儲器, 中國大陸,發明, 第ZL200510135697.4號, 林展瑞, 許世玄, 張維仁, 2009/08/05至2025/12/30
64. 數字感測電路, 中國大陸,發明, 第ZL200510135696.X號, 許世玄, 張維仁, 林展瑞, 2010/11/03至2025/12/30
65. 有機存儲器之位單元, 中國大陸,發明, 第ZL200510135901.2號, 張維仁, 許世玄, 林展瑞, 2010/11/03至2025/12/30
66. 有機記憶體, 中華民國,發明, 第I260643號, 林展瑞, 許世玄, 張維仁, 2006/08/21至2025/12/29
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