Research Associate, (June 2021-April 2023)  

Dept. of Electronics Engineering, IIT (ISM) Dhanbad, India

Project: Accurate Correlation of Dot Size Distribution with the Spectral Response of As-grown and Interdiffused Stacked Quantum Dots embedded in p-i-n Solar Cells

Responsibility: I worked as a part of the Research Group of Prof. Subindu Kumar, involved in the development of a detailed model for the spectral response (SR) of stacked as-grown III-V quantum dot (QD) ensembles, embedded in the intrinsic region of p-i-n QD solar cells (QDSCs) by correlating it with the effects of interdiffusion and dot size distribution. Validation of the the developed model through an industrial Simulator.

Tool Used: Crosslight APSYS, SILVACO TCAD, MATLAB

Research Associate, (Aug 2019-Aug 2020)  

Centre of Excellence in Renewable Energy, IIT (ISM) Dhanbad, India 

Project: Establishment of Centre of Excellence for Training and Research in Frontier Areas of Science and Technology (FAST) (Centre of Excellence in Renewable Energy)

 Responsibility:

• Simulation of heterojunction devices and thin film Transistor by TCAD SILVACO & APSYS.

• Development of ZnO Nano dots, n-type ZnO thin films, Alumina doped ZnO by RF Magnetron sputtering.

• Development of p-type SnO thin films by e-beam evaporation,

• Development of ZnO-nanorods by the hydrothermal process through ZnO seed crystal developed by RF Magnetron sputtering, Development of n-ZnO/p-Si heterojunction solar cell,

• Annealing of thin films and dots by rapid thermal annealing system.

• Electrical characterization of thin film by Hall effect measurement,

• Electrical characterization of semiconductor devices by Source Measurement Unit (SMU), 

Junior Research Fellow, (Aug 2013-July 2014)  

Department of Electronics & Electrical Communication Engineering, IIT, Kharagpur 

Project: Development of MBE cluster tool based epitaxial Nano-semiconductor infrastructure and process integration facility for high performance RF/microwave compound semiconductor hetero-structure Nano-devices on Silicon (ENS)

Responsibility:

• • • Simulation of HEMT, LED by TCAD SILVACO

    • Development of GaN (AlGaN) and GaAs (AlGaAs) thin film by MBE.

    • Material characterization by Hall Effect Measurement.