2022
H.J. Hwang, S.Y. Kim, S.K. Lee, B.H. Lee, in preparation (2022).
Y. Lee, S. Kim, H.I. Lee, S.M .Kim, S.Y. Kim, K. Kim, H. Kwon, H.W. Lee, H.J. Hwang, S. Kang, B.H. Lee, “Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits”, ACS Nano, 16(7), pp. 10994-11003, 2022.06.28; https://doi.org/10.3390/nano11113003
M.G. Kwon, K.E. Chang, C. Kim, T.J. Yoo, S.Y. Kim, H.J. Hwang, B.H. Lee*, “Performance Enhancement of Graphene/Ge Near-infrared Photodetector By Modulating the Doping Level of Graphene”, AIP Photonics, 7(2), 026101, 2022.02.01; https://doi.org/10.1063/5.0070920
2021
H.I. Lee, S.Y. Kim, S.M. Kim, Y.S. Lee, H.W. Lee, S.H. Yu, H.J. Hwang, M.M. Sung, B.H.Lee, "Performance Evaluation of Scaled ZnO Stacked Nanosheet Channel Ternary Field Effect Transistor" IEEE Electron Device Letters, 43(2), pp. 323-326, 2021.12.28; http://doi.org/10.1109/LED.2021.3139225
A. Ali, S.Y. Kim, M. Hussain, S.H.A. Jaffery, G. Dastgeer, S. Hussain, B.T.P. Anh, J. Eom, B.H. Lee, J. Jung*, "Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction", Nanomaterials, 11(11), 3003, 2021.11.09; https://doi.org/10.3390/nano11113003
T.J.Yoo, S.Y. Kim, M.G.Kwon, C.H.Kim, K.E.Chang, H.J.Hwang, B.H. Lee*, "A facile method to improve the detectivity of graphene/p-type silicon heterojunction photodetector," Laser and Photonics Reviews, online published, p. 2000557, 2021.06.16; https://doi.org/10.1002/lpor.202000557
S.M.Kim, S.W.Heo, H.I.Lee, Y.S.Lee, S.Y. Kim, T.J. Yoo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive amplitude modulated discharge current analysis of physical defects in a graphene channel," Carbon , 179, pp. 627-632, 2021.04.28; https://doi.org/10.1016/j.carbon.2021.04.082
S.Y. Kim, K.Y.Kim, A.R Kim, H.I.Lee, Y.S. Lee, S.M.Kim, H.W.Lee, H.J.Hwang, B.H. Lee*, "Operation principles of ZnO/Al2O3-AlDMP/ZnO stacked-channel ternary thin-film transistor," Advanced Electronic Materials, 7(6), p. 2100247, 2021.05.09; https://doi.org/10.1002/aelm.202100247
S.Y. Kim, J. Yoo, H.J. Hwang, B.H. Lee, "Demonstration of programmable ternary graphene field-effect transistor using ferroelectric polymer doping," Organic Electronics, 93, p.106157, 2021.03.26; https://doi.org/10.1016/j.orgel.2021.106157
2020
T.H.Kim, W.J.Park, S.Y. Oh, S.Y. Kim, N. Yamata, H. Kobayashi, H.Y. Jang, J.H. Nam, H. Habazaki, B.H. Lee, B.J. Cho, "Unveiling the role of Al2O3 interlayer in indium gallium zinc oxide transistors," Physica status solidi (a), 2020.12.30; https://doi.org/10.1002/pssa.202000621
J.W. Um, S.Y. Kim, B.H. Lee, J.B. Park, S.H.Jeong, "Direct writing of graphite thin film by laser-assisted chemical vapor deposition," Carbon, 169, pp.163-171, 2020.11; https://doi.org/10.1016/j.carbon.2020.07.035
S.C. Kang, S.Y. Kim, S.K. Lee, K. Kim, B. Allouche, H.J. Hwang, B.H.Lee, "Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors," Nanomaterials, 10(6), p. 1186, 2020.06; https://doi.org/10.3390/nano10061186
S.Y. Kim, J.A. Ryou, M.J. Kim, K.Y. Kim, Y.S. Lee, S.M. Kim. H.J. Hwang, Y.H. Kim, B.H. Lee, "Performance degradation in Graphene-ZnO barristors Due to Graphene Edge Contact," ACS Applied Materials & Interfaces, 12(25), pp. 28768-28774, 2020.06; https://doi.org/10.1021/acsami.0c04325
J. Kim, T. Kim, S. Oh, J. H. Nam, Y. Kim, N. Yamada, H. Kobayashi, S.Y. Kim, B. H. Lee, H. Habazaki, W. Park, B. Cho, "Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light", ACS Appl. Electron. Mater., 2(5), pp. 1478-1483, 2020.05; https://doi.org/10.1021/acsaelm.0c00228
M.W. Son, S.S. Chee, S.Y. Kim, W. Lee, Y.H. Kim, B.Y. Oh, J.Y. Hwang, B.H. Lee, M.H. Ham, “High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition ”, Carbon, 159(15), pp. 579-585, 2020.04; https://doi.org/10.1016/j.carbon.2019.12.095
2019
H.J.An, H. Hong, Y.R. Jo, J.M. Lee, H.J. Yoon, S.Y. Kim, J.S. Song, S.Y. Jeong, B.H. Lee, B.J. Kim, S.G. Jung, T.S. Park, S.M. Kim, C.W. Bark, S.W. Kim, T.Y. Koo, K.T. Ko, B.J. Kim, S.H. Lee, "Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films,” NPG Asian Materials, 11(68), pp. 1-10, 2019.11; https://doi.org/10.1038/s41427-019-0172-4
M.W. Son, H. Kim, J. Jang, S.Y. Kim, H.C. Ki, B.H. Lee, I. Kim, M.H. Ham, “Low-power complementary logic circuit using polymer electrolyte-gated graphene switching devices”, ACS Applied Materials & Interfaces, 11(50), pp. 47247-47252, 2019.11; https://doi.org/10.1021/acsami.9b16417
Y.J. Yoo, Y.J. Kim, S.Y. Kim, J.H. Lee, J.H. Ko, J.W. Lee, K.J. Kim, B.H. Lee, Y.M. Song, "Mechanically Robust Antireflective Moth-eye Structures with a tailored coating of dielectric materials,” Optical Materials Express, 9(11), pp. 4178-4186, 2019.10; https://doi.org/10.1364/OME.9.004178
S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H. Ham, K.J. Cho, B.H. Lee, “Threshold voltage modulation of graphene-ZnO barristor using polymer doping of graphene,” Advanced Electronic Materials, 5(7), 1800805, 2019.05; https://doi.org/10.1002/aelm.201800805
J. Song, K.S. Choi, S. Yoon, W. Sohn, S.P. Hong, T.H. Lee, H. An, S.Y. Cho, S.Y. Kim, D.H. Kim, T.L. Kim, S.U. Jeong, C.W. Bark, B.H. Lee, S.D. Bu, H.W. Jang, C. Jeon, S. Lee, “Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect,” The Journal of Physical Chemistry C, 123(18), pp. 11564-11571, 2019.04; https://doi.org/10.1021/acs.jpcc.9b00156
K.E. Chang, C. Kim, T.J. Yoo, M.G. Kwon, S. Heo, S.Y. Kim, B.H. Lee, “High Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction,” Advanced Electronic Materials, 5(6), 1800957, 2019.03; https://doi.org/10.1002/aelm.201800957 Front cover
S.Y. Kim, M.B. Kim, H.J. Hwang, B. Allouche, B.H. Lee, “Chemically doped graphene based ternary field effect transistors,” Jpn. J. Appl. Phys. 58(SB), SBBH04, 2019.02; https://doi.org/10.7567/1347-4065/aaffbb
H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee, “Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys. 58(SB), SBBH03, 2019.02; https://doi.org/10.7567/1347-4065/aafc99
2018
S.W. Heo, H.I. Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y. Kim, J.H. Kim, M.H. Yoon, B.H. Lee, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik, 530(10), 1800224, 2018.09; https://doi.org/10.1002/andp.201800224
S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters, 39(12), 1948, 2018.10; https://doi.org/10.1109/LED.2018.2874055
S. Seo, H. Choi, S.Y. Kim, J. Lee, K. Kim, S. Yoon, B.H. Lee, S. Lee, “Growth of centimeter-scale umonolayer and Few-layer WSe2 thin films on SiO2/Si substrates via pulsed laser deposition," ACS Applied Materials & Interfaces, 5(20), 1800524, 2018.07; https://doi.org/10.1002/admi.201800524
J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), 5952, 2018.05; https://doi.org/10.1021/acscatal.8b00877
K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W. Heo, M.G. Kwon, B.H. Lee, “Gate controlled graphene-silicon Schottky junction photodetector," Small, 14(28), 1801182, 2018.06; https://doi.org/10.1002/smll.201801182
S.Y. Kim, Y.J. Kim, U. Jung, B.H. Lee, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports, 8(1), pp. 2992- (2018.02; https://doi.org/10.1038/s41598-018-21055-z
2017
H.J. Hwang, K.E. Chang, W.B. Yoo, C.H. Shim, S.K. Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale, 9, p. 2442, 2017.01; https://doi.org/10.1039/C6NR08829E
2016
Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports, 6, p. 39393, 2016.12; https://doi.org/10.1038/srep39353
2015
B.H. Lee, H.J. Hwang, K.E. Chang, Y.J. Kim, S.Y. Kim, Y.B. Yoo, “Graphene device technology," The Mag. of the IEIE (2015). (invited)