OLED Pixel Circuit
Organic light-emitting diode (OLED) technology is widely used in various display platforms such as smartphones, wearables, and televisions, thanks to its high contrast ratio, fast response, and excellent black levels. Oxide-based thin-film transistors (TFTs) are attracting attention for OLED backplanes due to their low-cost fabrication process and good compatibility with large-area panels. However, degradation in the electrical characteristics of oxide TFTs can lead to luminance non-uniformity and image-quality degradation. Therefore, our group focuses on oxide-TFT-based OLED pixel circuits that internally compensate for variations in threshold voltage, mobility, and subthreshold swing, with the goal of realizing stable, high-quality next-generation OLED displays.
µLED Pixel Circuit
Micro light-emitting diode (µLED) display is emerging as a promising next-generation display platform because µLED offers higher brightness, a wider color gamut, lower power consumption, and strong resistance to burn-in compared to conventional OLED displays. Unlike OLED pixels, which are typically driven by analog current control, µLED displays commonly employ pulse-width modulation (PWM), where luminance is controlled by adjusting the emission time while maintaining a current level. Our group designs µLED pixel circuits and driving schemes to achieve high dynamic range, precise grayscale control, and energy-efficient operation.
OLEDoS Pixel Circuit
Our research on OLEDoS display focuses on Si-based pixel circuit technologies for high-resolution VR microdisplays. Because OLEDoS systems typically adopt PAM to drive OLEDs, they suffer from a limited data voltage range due to the restricted voltage headroom of advanced CMOS processes, and are highly sensitive to variations in transistor characteristics. To address these challenges, we develop stable pixel circuit and driving methods that expands the data voltage range while suppressing pixel-to-pixel luminance variations caused by device characteristic variations, enabling stable low-gray-level expression and improved uniformity in high-PPI microdisplay applications.
LEDoS Pixel Circuit
Our research on LEDoS display focuses on Si-based pixel circuit technologies for ultra-high resoluation and luminance AR microdisplays. LEDoS systems typically rely on PWM, which requires extremely fast and precise switching within each pixel. Our lab focuses on developing high-speed switching pixel circuits and driving architectures capable of supporting large data bandwidths and fine grayscale resolution. Our work also addresses timing errors and performance degradation associated with device scaling, enabling reliable grayscale control and stable high-luminance for next-generation AR display systems.
Conventional CMOS image sensor (CIS) integrates both pixel transistor and photodiode on a silicon-based platform. To reduce fabrication cost, there is growing interest in applying oxide-based thin-film transistors (TFTs) to image sensor circuit. Our lab investigates and optimizes oxide-semiconductor-based image sensor architectures so that they can serve as viable alternatives to conventional CIS in next-generation imaging systems.
4T-APS (Active Pixel Sensor) Circuit Analysis
PCB Design for Physiological Bio-Sensor System
Our group develops advanced system-level circuits by integrating custom-fabricated devices, CMOS circuitry, and PCB-based electronic systems. Our work includes the development of MCU- and FPGA-based timing controllers, AFE-optimized sensing architectures, and dot-matrix-driver–integrated PCB platforms that enable stable, low-power, and high-sensitivity operation. Through these integrated systems, we aim to develop flexible and energy-efficient hardware control frameworks that are suitable for various next-generation sensing, display, and neuromorphic computing platforms.
Project sponsors
삼성전자, KEIT(한국산업기술평가관리원), LG Display(엘지디스플레이), SDC(삼성디스플레이)