Research Interest Statement

My research has been focused on the growth of III-V semiconductor nanostructure using a plasma-assisted molecular-beam epitaxy (MBE) and the fabrication of various devices such as wearable optoelectronics, next-generation sensors, and sustainable energy devices.

1. Growth of high-crystalline III-nitride nanostructures

• Formation of high-crystalline III-nitride nanostructures, such as GaN, InN, InGaN, and so on, using group III-atom pre-deposition method

• New conceptual III-nitride nanostructures, such as InGaN/GaN core-shell nanowires, disks in a nanowire, and so on 

2. Flexible and stretchable photodetectors

• Flexible and stretchable photodetectors based on III-nitride nanostructures through convergence with 2D materials, such as graphene 

• High photoresponsivity with an eye-crossing percentage close to 50% 

3. Photoelectrochemical water splitting

• Hydrogen generation with high efficiency and long-term stability 

• Control of carrier dynamics by inducing high carrier concentration and carrier guiding effect through the New conceptual III-nitride nanostructures

• Improvement in hydrogen generation using III-nitride nanostructures coated with 2D materials, such as Ti3C2-MXene

4. Self-powered flexible motion sensors

• Alignment technology of III-nitride nanostructures using magnetic field 

• Fabrication of self-powered flexible motion sensors and detection of various motions of the human body

5. Photonic-crystal surface-emitting laser

• Epitaxy of III-V semiconductor, such as GaAs, InP, GaSb, and so on, using MOCVD

• Etching process using electron beam lithography for the formation of airholes

• Airhole-retaining regrowth using MOCVD to achieve high optical feedback