Materials Analysis

• Magnification : 50X ~ 1000X

• Stage : L2-S8A 8*8 stage

• Illumination : Koehler system

• Filters : FILTER 25 NCB FOR L200 (EPI/DIA)

• Base : L200N STAND 100/240V

• Objectives chromatic aberration free lens

• C-MOS digital camera

• Ion energy range : 50 eV ~ 2 keV

• Beam diameter : ~1 μm

• Milling angle : -10° ~ +30°

• Vacuum system : Oil-free vacuum, base pressure ~3×10⁻⁵ Pa

• Cryogenic stage : 액체질소 냉각 (최대 약 -170°C)

• Imaging : Secondary electron detector 

• Power : 45kV, 200mA (9kW Rotating Anode) 

• Beam : Cu Kα1+2 

• Detector : 1D High-Speed Detector (D/teX Ultra 250) 

• Resolution (FWHM) : 0.015° (SRM1976) 

• 2Θ Range : 5° ~ 120° 

• Measurement Mode : Horizontal (Optional) 

• Illumination : Orthogonal Scan System

• Scanner : Decoupled XY and Z Flexure Scanners 

• XY Scan Range : 50 µm × 50 µm 

• Z Scan Range : 15 µm (Z detector noise < 0.02 nm) 

• Measurement Modes : True Non-Contact™ Mode, C-AFM, KPFM, etc. 

• Sample Size : Up to 50 mm × 50 mm, 20 mm thickness 

• Vision : Direct on-axis optical microscope 

• Enclosure : Acoustic Enclosure for vibration and acoustic isolation  

• Electron optics - Resolution

- HV : 0.9 nm @15 kV, 1.4 nm @1 kV

- Accelerating voltage : 1 kV ~ 30 kV

- Probe current : up to 200 nA

- Magnification : 30 x ~ 1,280 kx

• Ion optics - Resolution : 5 nm @30 kV

- Beam voltage : 500 V - 30 kV

- Multi chem gas injection systems (C, Pt, W, H2O)

• Secondary Electron Image resolution : 0.6 nm@15 kV, 0.7 nm@1 kV (*1) 

• Magnification : 20 to 2,000,000x

• Electron Gun : Cold cathode field emission gun with anode heating system

• Accelerating Voltage : 0.5 to 30 kV

• Landing Voltage(*1) : 0.01 to 20 kV

• Detectors : Upper Detector (UD) with ExB filter: SE/BSE signal mixing function, Lower Detector (LD)

• Acceleration voltage : 60 - 300 kV

• Lattice resolution : 0.065 nm

• BF-STEM resolution : 0.14 nm

• HAADF-STEM resolution : 0.12 nm

• Probe stability : 1 nm/min or less

• Stage stability : 1 nm/min or less

• EDS resolution : 128 eV

• EELS resolution : 0.16 eV

• Contamination : 1 nm/min or less

• Acceleration voltage : 80 - 300 kV

• Lattice resolution : 0.05 nm

• BF-STEM resolution : 0.063 nm

• HAADF-STEM resolution : 0.063 nm

• EDS resolution : 127 eV

• EELS resolution : 0.3 eV (at 300kV)