2025
S.H. Shin*, N. Taoka, M. Takenaka, and Shinichi Takagi, "Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method", IEEE, Transactions on Electron Devices (In Review)
S.H. Shin, M. Masuduzzaman, M.A. Alam, "Characterizing self-heating dynamics using cyclostationary measurements", AIP, Applied Physics Letter 126 (8)
2019
M. A. Alam, B. K. Mahajan, Y. -P. Chen, W. Ahn, H. Jiang and S. H. Shin, "A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review", IEEE Transactions on Electron Devices
S. Kim et al., "Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs", IEEE Journal of the Electron Devices Society
2018
S. Kim et al., "Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs", IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
K. Ramadoss et al., "Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices", IEEE Electron Device Letters
S. Shin et al., "Performance Potential of Ge CMOS Technology From a Material-Device-Circuit Perspective", IEEE Transactions on Electron Devices
S. Shin et al., "High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics", IEEE International Reliability Physics Symposium (IRPS)
W. Ahn, S.H. Shin, C. Jiang, H. Jiang, M.A. Wahab, M.A. Alam, "Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits", Microelectronics Reliability
2017
W. Ahn et al., "A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor Reliability", IEEE Transactions on Electron Devices
H. Jiang et al., "Unified self-heating effect model for advanced digital and analog technology and thermal-aware lifetime prediction methodology", Symposium on VLSI Technology (VLSI)
M. Si et al., "Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs", IEEE International Reliability Physics Symposium (IRPS)
H. Jiang, S. Shin, X. Liu, X. Zhang and M. A. Alam, "The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits", IEEE Electron Device Letters
2016
W. Ahn, H. Jiang, S. Shin and M. A. Alam, "A novel synthesis of Rent's rule and effective-media theory predicts FEOL and BEOL reliability of self-heated ICs", IEEE International Electron Devices Meeting (IEDM)
S. H. Shin, S. . -H. Kim, S. Kim, H. Wu, P. D. Ye and M. A. Alam, "Substrate and layout engineering to suppress self-heating in floating body transistors", IEEE International Electron Devices Meeting (IEDM)
W. Ahn et al., "Optimum filler geometry for suppression of moisture diffusion in molding compounds", IEEE International Reliability Physics Symposium (IRPS)
H. Jiang, S. Shin, X. Liu, X. Zhang and M. A. Alam, "Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs", IEEE International Reliability Physics Symposium (IRPS)
M. A. Wahab, S. Shin and M. A. Alam, "Spatio-temporal mapping of device temperature due to self-heating in Sub-22 nm transistors", IEEE International Reliability Physics Symposium (IRPS)
2015
S. H. Shin et al., "Fundamental trade-off between short-channel control and hot carrier degradation in an extremely-thin silicon-on-insulator (ETSOI) technology", IEEE International Electron Devices Meeting (IEDM)
M. A. Wahab, S. Shin and M. A. Alam, "3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature", IEEE Transactions on Electron Devices
S. Shin et al., "Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs", IEEE Transactions on Electron Devices
M. Si et al., "Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs", IEEE Transactions on Electron Devices
M. Si et al., "Characterization and reliability of III-V gate-all-around MOSFETs", IEEE International Reliability Physics Symposium (IRPS)
2014
S. Shin et al., "Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs", IEEE Transactions on Electron Devices
N. Conrad et al., "Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs", IEEE International Electron Devices Meeting(IEDM)
S. Shin et al., "Origin and implications of hot carrier degradation of Gate-all-around nanowire III–V MOSFETs", IEEE International Reliability Physics Symposium
2013
S. H. Shin et al., "Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs", IEEE International Electron Devices Meeting
N. Conrad et al., "Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs", IEEE Transactions on Device and Materials Reliability
2025 ARC Lab
Hanyang University
E-mail : sanshin@hanyang.ac.kr
Tel : +82 031-400-5177 (Office)
(15588) 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Korea (Engineering Building 3, 415-1)