Journal

2026

[5] Y. Shin, D. J. Jang, M. W. Kwon*, "Compact modeling of Pd–MoS₂ self-rectifying RRAM based on modulated Schottky barrier equation", Nanotechnology, vol.37, no.29, p.295201, 2026.

[4] D. Kim, M. W. Kwon*, "Investigation of grain boundary effect in polycrystalline silicon based positive feedback field effect transistors", IEEE Access, Jul. 2026.

[3] H. Jeon, M. W. Kwon*, "Work function optimization of dual metal buried channel array transistor dynamic random-access memory for simultaneous mitigation of gate-induced drain leakage, gate-induced ...", Japanese Journal of Applied Physics, vol.65, no.7, p.07SP11, 2026.

[2] H. Yeom, M. W. Kwon*, "In-memory computation using positive feedback field effect transistor array based on charge trap layer for Boolean logic", Japanese Journal of Applied Physics, vol.65, no.1, p.01SP10, 2026.

[1]  M. H. Jeon, Y. Kim, H. Yoo, E. Yoo, J. Kim, M. W. Kwon*, J. W. Nam*, "A High Temperature–Voltage Sensitivity 2 - Transistor Voltage Reference With Wide Range Operation", Electronics Letters, vol.62, no.1, p.e70544, 2026.

2025

[6] D. Jang, S. Kim*, M. W. Kwon*, "Room Temperature Hydrogen Gas Sensor Based on Pd-SnO₂ Nanomaterials with Electro-spinning", Journal of Semiconductor Technology and Science, vol.25, no.6, p.703-710, 2025.

[5] Y. S. Kim, M. W. Kwon*, "Implementation of Boolean Logic Operations and Refresh Circuit for 2T DRAM-Based PIM Architecture", Electronics, vol.14, no.22, p.4483, 2025.

[4] M. Park, M. W. Kwon*, "Integration of Neuronal Excitatory and Inhibitory Functions in a Neuron Circuit Using Positive Feedback Field Effect Transistor", Journal of Semiconductor Technology and Science, vol.25, no.2, p.109-116, 2025.

[3] H. Jeong, M. Park, M. W. Kwon*, "Development of In-Memory Computing Device Using Positive Feedback Field Effect Transistor Based on NAND Flash Array", IEEE Access, vol.13, p.45449-45457, 2025.

[2] H. Jeong, M. W. Kwon*, "Analysis of electrical characteristics changes due to physical parameter variations in dual-gate feedback field effect transistor", Journal of Semiconductor Technology and Science, vol.25, no.1, p.1-8, 2025.

[1] J. Lim, M. H. Baek*, M. W. Kwon*, "Analysis of the Switching Mechanism of Hafnium Oxide Layer with Nanoporous Structure by RF Sputtering", Journal of Semiconductor Technology and Science, vol.25, no.1, p.9-13, 2025.

2024

[8] Y. S. Kim, M. W. Kwon*, "Mitigation of 1-Row Hammer in BCAT Structures Through Buried Oxide Integration and Investigation of Inter-Cell Disturbances", Electronics, vol.13, no.24, p.4936, 2024.

[7] Y. Cho, Y. S. Kim, M. W. Kwon*, "Mitigating Pass Gate Effect in Buried Channel Array Transistors Through Buried Oxide Integration: Addressing Interference Phenomenon Between Word Lines", Applied Sciences, vol.14, no.22, p.10348, 2024.

[6] H. Kim, M. W. Kwon*, S. Kim, J. Kim, H. Shin, E. Lee, "Semiconductor devices having buried gates", US Patent, 12,127,394, 2024.

[5] U. J. Cho, Y. Jeon, S. W. Park, M. W. Kwon*, "Enhancing Accuracy of Nanocomposite Hydrogen Sensors in Various Environmental Situations through Machine Learning", Journal of Semiconductor Technology and Science, vol.24, no.5, p.393-398, 2024.

[4] J. Lee, M. W. Kwon*, "Positive feedback field effect transistor based on vertical NAND flash structure for in-memory computing", Japanese Journal of Applied Physics, vol.63, no.2, p.02SP56, 2024.

[3] B. Poornaprakash, B. P. Reddy, P. R. Prasad, A. S. Reddy, K. Subramanyam, M. S. P. Reddy, A. M. Tighezza, S. Sangaraju, S. H. Park, M. W. Kwon, Y. L. Kim, R. Gopal, "Synthesis of highly efficient (Cr, Gd) co-doped CdS quantum dots for photocatalytic H2 evolution beneath artificial solar light irradiation", Ceramics International, vol.50, no.4, p.6120-6127, 2024.

[2] Y. S. Kim, C. Y. Lim, M. W. Kwon*, "Mitigating WL-to-WL disturbance in dynamic random-access memory (DRAM) through adopted spherical shallow trench isolation with silicon nitride layer in the buried channel array Transistor (BCAT)", Electronics, vol.13, no.4, p.681, 2024.

[1] C. Y. Lim, Y. S. Kim, M. W. Kwon*, "Interfacial Trap-based 1-row Hammer Analysis of BCAT and Nitride Layer BCAT Structures in Dynamic Random Access Memory", Journal of Semiconductor Technology and Science, vol.24, no.1, p.18-24, 2024.

2023~

[15]  Junhyeong Lee, and Min-Woo Kwon. "Positive feedback field effect transistor based on vertical NAND flash structure for in-memory computing." Japanese Journal of Applied Physics (2023).

[14]  Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon. "Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM." Journal of IKEEE 27.3 (2023): 220-224.

[13]  DongJun Jang, and Min-Woo Kwon. "Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays." Electronics 12.22 (2023): 4650.

[12]   Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 295-302.

[11]   DongJun Jang, U Jin Jo, Youhyeong Jeon, TaeYong Lee, RyangHa Kim, YoungLae Kim, and Min-Woo Kwon. "Resistive Hydrogen Detection Sensors based on 2 Dimensions–Molybdenum Disulfide Decorated by Palladium Nanoparticles." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 258-264.

[10]  U Jin Jo, DongJun Jang, Youhyeong Jeon, Taeha Kim, YoungLae Kim, and Min-Woo Kwon. "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature." Applied Sciences 13.19 (2023): 10594.

[9]  Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.4 (2023): 236-242.

[8]  Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance." 2023 Silicon Nanoelectronics Workshop (SNW). IEEE, 2023.

[7]  Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor." Applied Sciences 13.4 (2023): 2628.

[6]  DongJun Jang, Beomso Jo, YoungLae Kim, and Min-Woo Kwon. "ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode." 2023 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2023.

[5]   Chang Young Lim, and Min-Woo Kwon. "Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.6 (2022): 452-458.

[4]   DongJun Jang, HyunWoo Ryu, HyeonJin Cha, Na-young Lee, YoungLae Kim, and Min-Woo Kwon. "Synaptic Device based on Resistive Switching Memory using Single-walled Carbon Nanotubes." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.5 (2022): 346-352.

[3]  Min-Woo Kwon, Kyungchul Park, and Byung-Gook Park. "Low-Power Adaptive Integrate-and-Fire Neuron Circuit Using Positive Feedback FET Co-Integrated With CMOS." IEEE Access 9 (2021): 159925-159932.

[2]  Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Junil Lee, and Byung-Gook Park, "A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS," Journal of the Electron Devices Society, Vol. 7, no. 1, pp. 1080-1084, Sep. 2019

[1]  Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park, “Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation,” Journal of applied physics, Vol. 124, pp. 152107, Sep. 2018